Pre-photolithographic GaAs Surface Treatment for Improved Photoresist Adhesion

During Wet Chemical Etching and Improved Wet Etch Profiles

 

A.J. Griñe, J.B. Clevenger, M.J. Martinez, F.H. Austin, P.S. Vigil, K.L. Romero, R. Timon,

G.A. Patrizi, C.T. Sullivan

Sandia National Laboratories, Albuquerque, NM, 87185

ajgrine@sandia.gov, 505-844-5531

LMATA, Albuquerque, NM, 87185

 

Keywords: Photoresist adhesion, Gallium arsenide, Wet etch, Surface treatment, Profile

 

Abstract

Results of several experiments aimed at remedying photoresist adhesion failure during spray wet chemical etching of InGaP/GaAs NPN HBTs are reported. Several factors were identified that could influence adhesion and a Design of Experiment (DOE) approach was used to study the effects and interactions of selected factors. The most significant adhesion improvement identified is the incorporation of a native oxide etch immediately prior to the photoresist coat. In addition to improving adhesion, this pre-coat treatment also alters the wet etch profile of (100) GaAs so that the reaction limited etch is more isotropic compared to wafers without surface treatment; the profiles have a positive taper in both the [011'] and

[011] directions, but the taper angles are not identical. The altered profiles have allowed us to predictably yield fully probe-able HBTs with 5×5 μm emitters using 5200 Å evaporated metal without planarization.

 

 

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