High Performance InAlN/GaN HEMTs on SiC Substrate

 

Han Wang*+, Jinwook W. Chung+, Xiang Gao&, Shiping Guo&, and Tomas Palacios+

+Department of Electrical Engineering and Computer Science

Massachusetts Institute of Technology, Cambridge MA 02139, USA. E-mail: hanw@mtl.mit.edu

& IQE RF LLC, Somerset, NJ 08873, USA

*Corresponding author: e-mail: hanw@mtl.mit.edu, Phone: +01 617 460 7364

 

Keywords: Compound Semiconductor, InAlN/GaN, High Electron Mobility Transistors(HEMT).

 

Abstract

In this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative to SixNy passivation. The fabricated devices give record maximum drain current density and transconductance.

 

 

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