N-Face GaN-Based Microwave Metal-Insulator-Semiconductor High Electron

Mobility Transistors by Plasma-Assisted Molecular Beam Epitaxy

 

Man Hoi Wong*, Yi Pei, David Brown, James S. Speck, and Umesh K. Mishra

ECE and Materials Departments, University of California, Santa Barbara, CA 93106-9560, USA

*Email: mhwong@ece.ucsb.edu; Tel: +1-805-893-5936

Michael L. Schuette, Hyeongnam Kim, Venkatesh Balasubramanian, and Wu Lu

ECE Department, Ohio State University, Columbus, OH 43210, USA

 

Keywords: GaN, N-face, AlN, molecular beam epitaxy (MBE), high electron mobility transistor (HEMT), microwave ower

Abstract

 

This work investigates the use of N-face GaN-based eterostructures as a promising approach to overcome erformance limitations commonly encountered in Gaface lGaN/GaN HEMTs as their frequency of operation _x0t0e0nd1s_ iGntaoN ,t hwei thm iitlsli mreevteerrs-ewda dveir acntido nb oefy opnodla. riNza-ftaiocne ompared to that of the Ga-face (0001), are well-suited or designing new device structures that address the roblems f poor electron confinement and high ohmic ontact resistance in highly-scaled GaN transistors. The abrication and characterization of two N-face MISHEMT tructures by plasma-assisted MBE are resented. The devices demonstrated good RF erformance at 4 GHz, with the highest continuous-wave utput power density and power-added efficiency xceeding 8 W/mm and 70%, respectively. At 10 GHz, an utput power density and power-added efficiency of 4.2 /mm and 49%, respectively, were achieved.

 

 

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