Recent progress in rare-earth-doped semiconductors

 

Yasufumi Fujiwara, Atsushi Nishikawa, and Yoshikazu Terai

Division of Materials and Manufacturing Science, Graduate School of Engineering,

Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

fujiwara@mat.eng.osaka-u.ac.jp

(+81)-6-6879-7498

 

Keywords: Rare-earth-doped semiconductor, OMVPE, LED, GaAs. GaN, Erbium, Europium

 

Abstract

RE-doped semiconductors have attracted much attention as a new class of materials with unique luminescent and magnetic properties. We have grown Er,O-codoped GaAs and Eu-doped GaN by OMVPE, and demonstrated LEDs with the materials as an active layer, operating at room temperature under current injection. The LEDs exhibit characteristic emission due to intra-4f shell transitions of the trivalent RE ions which are effectively excited by the energy transfer from the hosts.

 

 

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