Recent progress in rare-earth-doped semiconductors
Keywords: Rare-earth-doped semiconductor, OMVPE, LED, GaAs. GaN, Erbium, Europium
RE-doped semiconductors have attracted much attention as a new class of materials with unique luminescent and magnetic properties. We have grown Er,O-codoped GaAs and Eu-doped GaN by OMVPE, and demonstrated LEDs with the materials as an active layer, operating at room temperature under current injection. The LEDs exhibit characteristic emission due to intra-4f shell transitions of the trivalent RE ions which are effectively excited by the energy transfer from the hosts.