GaN on Si Based Power Devices: An Opportunity to

Significantly Impact Global Energy Consumption

 

Michael A. Briere

ACOO Enterprises LLC, Woonsocket RI USA, acompanyofone@aol.com, 310-529-2023

 

KEYWORDS: GaN on Si HEMT, ENERGY EFFICIENCY, COMMERCIALIZATION

 

ABSTRACT

A summary is presented of opportunities to significantly impact global energy consumption, by more than 25 % in 2025, through the use of more efficient working load architectures, enabled by new power electronics, provided that significant and rapid adoption of these architectures occurs. The rate of adoption is determined, to a large extent by the economic barriers or incentives involved. The availability of new power electronics based on commercially viable wide band gap semiconductors such as GaN on silicon power devices fabricated in silicon foundries, provides the required performance to cost value proposition to enable lower economic barrier to adoption for these energy efficient architectures. Evidence for the commercially viable manufacturabity of these devices will be presented.

 

 

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