AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punchthrough
Breakdown Immunity and Low On-Resistance
Keywords: AlGaN/GaN, lateral field-effect rectifier, dual channel, on-resistance, punchthrough breakdown
An AlGaN/GaN dual-channel lateral field-effect rectifier (DCL-FER) with improved balance between the reverse breakdown voltage and on-resistance is proposed. Instead of utilizing a long single enhancement - mode (E-mode) schottky-controlled channel to enhance the punchthrough breakdown voltage but inevitably sacrifice the on-resistance, the DCL-FER features a dualchannel consisting of one E-mode section and one depletion-mode (D-mode) section in series. The D-mode channel provides higher carrier density that facilitates high on-current or low on-resistance, while still preventing the E-mode channel from being punched through under high reverse voltage. For rectifiers with the same physical dimensions (a drift region length of 5 μm and a total Schottky-controlled channel length of 2 μm), the DCL-FER delivers comparable breakdown voltage while featuring 53 % lower on-resistance.