AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punchthrough

Breakdown Immunity and Low On-Resistance

 

Chunhua Z􀁋ou1, Wanjun Chen1, 2, Edwin L. Piner3, Kevin J. Chen1, *

1Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology,

Clear Water Bay, Kowloon, Hong Kong, *email: eekjchen@ust.hk (Tel.: 852-23588969)

2State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic

Science and Technology of China, Chengdu 610054, China

3Nitronex Corporation, Durham, NC 27703, USA

 

Keywords: AlGaN/GaN, lateral field-effect rectifier, dual channel, on-resistance, punchthrough breakdown

 

Abstract

An AlGaN/GaN dual-channel lateral field-effect rectifier (DCL-FER) with improved balance between the reverse breakdown voltage and on-resistance is proposed. Instead of utilizing a long single enhancement - mode (E-mode) schottky-controlled channel to enhance the punchthrough breakdown voltage but inevitably sacrifice the on-resistance, the DCL-FER features a dualchannel consisting of one E-mode section and one depletion-mode (D-mode) section in series. The D-mode channel provides higher carrier density that facilitates high on-current or low on-resistance, while still preventing the E-mode channel from being punched through under high reverse voltage. For rectifiers with the same physical dimensions (a drift region length of 5 μm and a total Schottky-controlled channel length of 2 μm), the DCL-FER delivers comparable breakdown voltage while featuring 53 % lower on-resistance.

 

 

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