High Output Power Density and Low Leakage Current of InGaN/GaN Nanorod
Light Emitting Diode with Mechanical Polishing Process
Keywords: Nanorod ,GaN, LED, CMP
We improve our fabrication of nanorod LED with mechnical polishing method. Our nanorod LED can achieve 6807mW/cm2 of output power density at 32A/cm2 of injection current density. The reversed-bias leakage current has also been reduced to nA level with the mechanical polishing process. Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.