Failure Investigations on AlGaN/GaN HEMTs for Different Sheet Resistances
by Means of Raman Thermography
Keywords: AlGaN/GaN HEMTs, power devices, thermal management, reliability
Blow up investigations on GaN HEMTs were performed. It is shown that the blow up power and the related device temperature limit depends on applied source-drain voltages
and the sheet resistance of the 2DEG in the device.