Nondestructive Determination of the Lateral Thermal Conductivity of Novel
Substrate Materials using Thermal Infrared Microscopy
HEMT, GaN, IR microscopy, Thermal Conductivity, Temperature Measurement, Diamond
The lateral thermal conductivity of substrates was probed with IR thermal microscopy. We show that heat spreading can be measured with useable accuracy, onwafer and non-destructively through measurements on Si, SiC and a novel diamond substrate. Sources of error are investigated and discussed.