Nondestructive Determination of the Lateral Thermal Conductivity of Novel

Substrate Materials using Thermal Infrared Microscopy

 

E. R. Hellera, K. Chabakb, V. Millerb, D. Walker Jr.b, M. Trejob, M. Kosslerb, J.K. Gillespieb, A. Crespob,

R. Veturyc, G.D. Viab

aAir Force Research Laboratory, Materials Directorate, Wright-Patterson Air Force Base, OH 45433, USA

bAir Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, USA

cRFMD, Defense and Power, Charlotte, NC, 28269, USA

 

HEMT, GaN, IR microscopy, Thermal Conductivity, Temperature Measurement, Diamond

 

Abstract

The lateral thermal conductivity of substrates was probed with IR thermal microscopy. We show that heat spreading can be measured with useable accuracy, onwafer and non-destructively through measurements on Si, SiC and a novel diamond substrate. Sources of error are investigated and discussed.

 

 

 

16.4  PDF                     Return to TOC