Sub half micron structures with profile control on compound semiconductor

substrates based on conventional i-line lithography

 

Dominik Schrade-Köhn1,3, Philipp Leber1, Reza Behtash2, Hervé Blanck2, Hermann Schumacher1

1University of Ulm, Institute of Electron Devices and Circuits, 89081 Ulm, Germany

2UMS GmbH, 89081 Ulm, Germany

3E-mail: dominik.koehn@uni-ulm.de; Phone +49 731 50 31590

 

Keywords: lithography, resolution enhancement, i-line, slant gate, resist profile, compound semiconductor

 

Abstract

Conventional i-line lithography was used as a basis for resist profile modification. The aim was the creation of slanted passivation openings for gate contacts with gate lengths between 0.1 and 0.5 μm. It was shown that slanted profiles are possible by applying a post development bake to the Novolac photoresist. Dimension reduction was achieved by modifying the Novolac/bottom-antireflection- coating interface. A modified approach combining plasma treatment of the photoresist lines with a bake sequence was used to create slanted features below 0.1 μm in the passivation layer.

 

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