Selected technological improvements of SiC power devices in order to achieve high

performance combined with outstanding ruggedness

 

Peter Friedrichs

SiCED Electronics Development GmbH & Co. KG, a Siemens Company

Guenther-Scharowsky-Str. 1, D-91058 Erlangen; GERMANY

Email : peter.friedrichs@siemens.com

Phone +49 9131 734894 Fax +49 9131 723046

 

Keywords: SiC, VJFET, SBD, Packaging, EMI

 

Abstract

The following paper will address several aspects of SiC power device technologies which are mainly related to challenges arising from peripheral topics like packaging, e.g.; or are triggered by reliability issues. It will be sketched how devices can be optimized by design and improved processing in order to enhance the reliability. A critical discussion will be dedicated to power density considerations while developing SiC power devices. Finally, limits and alternatives of resp. for today’s packages regarding the switching speed will be shown and discussed.

 

 

18.7 PDF                                  Return to TOC