Integration of E-Mode P-Channel JFET into GaAs E/D-Mode JPHEMT Technology
for Multi-Band/Mode Antenna Switch Application
Masahiro Mitsunaga, Shinichi Tamari, Yuji Ibusuki and Mitsuhiro Nakamura
MMIC Engineering Department, Kagoshima Production Division 1, Sony Semiconductor Kyushu Corporation,
Kagoshima Technology Center, 5-1, Kokubu Noguchikita, Kirishima-shi, Kagoshima, 899-4393 Japan
E-mail: Masahiro.Mitsunaga@jp.sony.com, Phone: +81-995-47-3247

 

Key words: JPHEMT, P-channel Junction Field Effects Transistor (JFET), antenna switch

ABSTRACT
A Junction Pseudomorphic High Electron Mobility Transistor (JPHEMT) combined with CMOS decoder is widely used for GSM, CDMA and UMTS handsets as an antenna switch. The antenna switch can be miniaturized by replacing the CMOS decoder with GaAs on-chip decoder. Low power consumption is necessary in this application. We have developed E-mode pchannel Junction Field Effect Transistor (JFET) that is the component of GaAs logic on JPHEMT wafer. This device has achieved high turn-on voltage (Vf) of -1.1 V and high gate-source breakdown voltage (BVgs) of 20.5 V owing to the junction gate structure. A threshold voltage (Vth) is -0.68 V, The leakage currents is less than -10 nA/mm at Vgs = 0 V, and on-resistance (Ron) of 76.2 ohm-mm can be obtained. Combination with this low leakage current p-channel JFET and nchannel E-mode JPHEMT enable to design a low power consumption decoder.

 
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