A Difference of Thermal Design between GaN and GaAs

Takuji YAMAMURA, Kazutaka TAKAGI
Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation
1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8581, Japan
takuji.yamamura@toshiba.co.jp
+81-44-548-5282

Keywords: Thermal Resistance, Gate Width, Die Size, GaN, GaAs, SiC

Abstract

We measured thermal resistance among many layouts of GaAs FET and AlGaN/GaN HEMTs on SiC substrate. In GaAs FETs, their thermal resistances strongly depended on the total gate width, the gate pitch and the thickness of the dies. In AlGaN/GaN HEMTs on SiC substrate, the dependency was weaker than one of GaAs FET. The thermal resistances of AlGaN/GaN HEMTs on SiC substrate depended of the die size.

Paper 10b.1.pdf