Failure Modes and Effects Criticality Analysis (FMECA) of AlGaN/GaN Based Microwave Device Degradation Mechanisms
by
Shahrzad Salemi and A. Christou
(christou@umd.edu, 301-405-5208)
Materials Science and Engineering Department and Mechanical Engineering Department
University of Maryland, College Park, Maryland 20742

Key words: Field Effect Transistors, reliability, failure
modes, life tests, failure mechanisms

Abstract

This paper reviews the main degradation mechanisms of GaN-based HEMTs (High Electron Mobility Transistors) based on surfaces, interfaces, substrate and technology issues. Failure Mode and Effects Analysis is proposed as a powerful design assurance technique to identify and minimize potential problems in a process design. The product of an FMECA is a table of information which summarizes the analysis of all possible failure modes.

Paper 10b.3.pdf