The Study of Heterojunction Bipolar Transistors for High Ruggedness Performance

Szu-Ju Li, Cheng-Kuo Lin, Shu-Hsiao Tsai, Bing-San Hong, Dennis William, and Yu-Chi Wang
WIN Semiconductors Corp.
No.69, Technology 7th Rd., Hwaya Technology Park, Kuei-Shan Hsiang, Taoyuan, Taiwan 333
E-mail: sjli@winfoundry.com, Phone: +886-3-3975999#1517

Keywords: Safe Operating Area (SOA), Ruggedness, Thermal Coupling Effects

Abstract

InGaP/GaAs HBT has been widely used in power amplifier (PA) design for wireless communications due to its high linearity and high efficiency. For in the application of GSM power amplifier, it is at risk of being damaged due to high voltage standing wave ratio (VSWR) mismatch. To increase the capability of the device ruggedness, varieties of collector designs with proprietary collector doping profiles have been developed. In this paper, we will present the study for evaluating the device ruggedness

Paper 11b.3.pdf