Evaluation of Existing GaAs MIM-Capacitor Processes for Use with High-Voltage GaN MMIC Technologies

Philipp Leber 1,3, Marc Hollmer1, Dominik Schrade-Köhn1, James Thorpe2, Reza Behtash2,
Hervé Blanck2, Hermann Schumacher1
1University of Ulm, Institute of Electron Devices and Circuits, 89081 Ulm, Germany
2United Monolithic Semiconductors GmbH (UMS), 89081 Ulm, Germany
3E-mail: philipp.leber@uni-ulm.de; Phone +49 731 50 31581

Keywords: GaN, MIM, Silicon Nitride, Lifetime Estimation

Abstract

In this paper several existing industrial GaAs MIM-capacitor processes were evaluated regarding their suitability for use with high-voltage GaN MMIC technologies. These processes were tested using different time domain voltage stress methods from which lifetime estimations based on the linear field model were calculated. In addition the influence of elec-trode geometries and dielectric thicknesses on capacitor per-formance was investigated. Furthermore early device failures were correlated with defects detected on MIM bottom elec-trodes, these defects being identified by automated inspection methods.

Paper 11b.4.pdf