Successful Transfer of 12V pHEMT Technology

Jason Fender1, Monica C De Baca1, Jenn Hwa Huang1, Monte Miller1, Jose Suarez1
Iris Hsieh2, Y.C. Wang2
1Freescale Semiconductor, RF Division, 2100 E. Elliot Rd., Tempe, AZ 85284, USA
jason.fender@freescale.com, 480-413-3521
2WIN Semiconductors Corp., 69 Technology 7th Rd., Hwaya Technology Park, Kuei Shan Hsiang, Tao Yuan Shien,
Taiwan 333, irish@winfoundry.com, 886-3-397-5999 ext 1557

Keywords: PHEMT, Transfer, Process, Test

Abstract

This extended abstract describes the process that was followed and the results in transferring a 12V pHEMT technology from Freescale Semiconductor to WIN Semiconductors. The process transfer project was divided into four sections: the transfer mask, the epitaxial substrate, the frontside process, and the backside process. To evaluate the success of the transferred process, DC and RF characteristics were measured. In addition, reliability tests were used for the qualification. All success criteria were met.

Paper 12a.2.pdf