SiC Power Devices - Lessons Learned and Prospects After 10 Years of Commercial Availability

Peter Friedrichs
Infineon AG, Schottky-Str. 10, 91058 Erlangen, Germany,
Peter.friedrichs@infineon.com

Keywords: SiC, power semiconductors, Diodes, Transistors

Abstract

The contribution will comment on the role of silicon carbide based power semiconductor devices in industrial electronics with a focus on high power densities and improved efficiency. It will be sketched how the physical properties of SiC can be favorably used in order to minimize volumes of electronic components and/or reduce losses in power electronic systems. Specific device concepts for diodes and transistors with their pro’s and cons will be discussed. A special attention will be given to recent developments in order to further improve the outstanding reliability of SiC components. After a short outlook into the future if high voltage components a final discussion about upcoming application scenarios for modern SiC power devices will be given.

Paper 12b.1.pdf