Thin Film Power Source Integrated With a-Si:H/a-SiGe:H Thin FilmMOSFETS on Flexible Substrates

T. Martin(3) , Aris Christou(1,3), Martin Peckerar(2)
(1)Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
(2)Dept. Electrical Engineering, University of Maryland, College Park, Maryland 20742, USA
(3) Dept. of Mechanical Engineering, College Park, Maryland 20742, USA
*Corresponding author email: christou@umd.edu, 301-405-5208

Keywords: Flexible electronics, Thin film transistors, Flexible micropower sources

Abstract

Flexible displays are enabled by electro-optic devices integrated with an active matrix backplane which must have its own power system. Powered thin film transistors in each display pixel must switch and power an electro-optic device. Other applications include integrated analog organic electronics, reconfigurable flexible antennas, as well as flexible explosive detection. Micro autonomous sensor systems must have the power system integrated with lightweight flexible electronics. The present paper reports the achievement of an integrated power distribution system for flexible electronics based on a PEM flexible organic polymer foil substrate (Kapton) and a-Si:H/a-SiGe:H thin film n and p MOSFETs, integrated with a thin film RuOx/Zn/Pb power cell. Such a flexible substrate has a glass transition temperature of 320 C which will allow all standard semiconductor processes to be implemented. The limited processing temperatures introduces residual stresses and subsequent mechanical fatigue problems which must be resolved.

Paper 13.4.pdf