Material Studies of GaN on Diamond

Sergey Zaitsev, Frank Lowe, Daniel Francis, Firooz Faili, and Felix Ejeckam.
Group4 Labs, Inc.
sergey.zaitsev@group4labs.com, +1(952) 2015204

Key words: gallium nitride, diamond, high mobility, high frequency

Abstract

Group4 Labs has developed and made commercially available for the first time, a composite semiconductor wafer that comprises of heteroepitaxial Gallium Nitride (GaN) compound semiconductor films atomically attached to polycrystalline chemical vapor deposited (CVD) diamond substrate. This GaN-on-Diamond wafer system enables extremely rapid, efficient, passive, and cost-effective heat extraction from the heat-generating heteroepitaxial device layers since the GaN heating layers are less than twenty nanometers from the highly thermal conductive diamond.

Paper 13.7.pdf