6 Inch 0.1μm GaAs pHEMT Technology for E/V Band Application

His-Tsung Lin, Chao-Hong Chen, Shih-Chun, Lee, I-Te Cho,
Wen-Kai Wang, and Shinichiro Takatani
WIN Semiconductors Corp. No. 69 Technology 7th Rd, Hwaya Technology Park,
Kuei Shan Hsiang, Tao Yuan Shien, Taiwan (333)

Abstract
WIN Semiconductors Corp. has developed a new GaAs pHEMT technology with 0.1μm gate length by using Electron-Beam Lithography and be named as WIN PP10 with the option of 2 mil and 4 mil substrate thickness. PP10 is targeted to be applied mainly in millimeter wave application such as E-band & V-band, which are expected to support the market on the superior high data rate backhaul network of point-to-point radio for 3G/4G mobile base station or image scanning application for high throughput security check point and the penetrating inspection. On the other hand, it also could be an alternative solution for the existed Fiber-Optical Integrated Circuits (FOIC) and Ultra-Wide-Band (UWB) application instead of the GaAs mHEMT or InP pHEMT.

The design of PP10 includes a T-Gate profile for avoiding the gain degradation in ultra high frequency owing to the gate resistance. The high accuracy & resolution properties of E-beam writer illustrates the process capability of gate with 0.1μm of foot print and 0.45μm top dimension of gate located in only 2μm drain-to-source spacing with considering the overall channel on resistance. To accommodate ultra high-frequency (up to 90GHz) operations, the single recess and the passivation layer of 1500Å Nitride film are implemented for balancing the high performance and flexible circuit design window. The dc behavior of PP10 illustrates the pinch off voltage of -0.9 V with excellent Idmax of 720 mA when gate voltage of 0.5V, which achieve the maximum Transconductance as high as 750 mS/mm consequently. The 135 GHz of maximum cut-off frequency with breakdown voltage of 9V exhibits the great high frequency and power performance on PP10 technology. According to the extraction of MSG (Maximum Stable Gain ) from 110 GHz S-parameter measurement, the 8-9 dB gain performance from 70~90 GHz is detected on 2x50μm device. On the other hand, the extremely high power density of 850 mW/mm at 29 GHz on the device of 2x50μm biased at Vd of 4V and the superior minima noise figure of 0.8dB at 40 GHz on the device of 8x25μm biased at Vd of 2V exhibits the potential of integrating E/V band’s Tx/Rx core circuit on one chip by using PP10.

Paper 9b.2.pdf