A Study of Implant Damage and Isolation Properties in an InGaP HBT Process

Alan Bratschun and Martin J. Brophy, Avago Technologies, Fort Collins, CO, USA
Contact: Alan.Bratschun@avagotech.com

Abstract
Low isolation leakage is important in HBT processes for several reasons: leakage contributes to the quiescent current which degrades battery life in mobile devices, low leakage currents are often used to evaluate device stability in environmental stress tests, and high levels of leakage can interfere with circuit performance by creating parasitic signal cross talk in MMICs.

We will report on an experiment conducted to improve the isolation as demonstrated on custom epi structures, using varied implant schemes.

Paper 9b.4.pdf