GaAs ManTech On-Line Digest Search

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2015 On-line Digest Table of Contents

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SESSION 1: PLENARY
Chairs: David Via, AFRL

1.1

Invited Presentation
 Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-Efficiency Systems
Timothy D. Heidel1, David Henshall1, Pawel Gradzki2
1Advanced Research Projects Agency – Energy (ARPA-E) U.S. Department of Energy, 2Booz Allen Hamilton

 

Abstract

1.2

Invited Presentation
Compound Semiconductor Technology for Modern RF Modules: Status and Future Directions
Daniel S. Green1, Carl L. Dohrman2, Avinash S. Kane2, Tsu-Hsi Chang3
1DARPA, 2Booz Allen Hamilton, 3HetInTec Corp

 

Abstract

1.3

Invited Presentation
Importance of High Frequency Compound Semiconductor Devices for Wireless Power Transfer using Direct-Current-Resonance System
Tatsuya Hosotani
Murata Manufacturing Co., Ltd

 

Abstract

SESSION 2:  COMPOUND SEMICONDUCTOR TRENDS
Chairs: Michelle Bourke, Kilbrydon Consulting
Barb Landini, Sumika Electronic Materials

2.1

Invited Presentation
Mobile RF Front End Integration

James P. Young
Skyworks Solutions, Inc.

 

Abstract

2.2

Invited Presentation
Packaging Trends in the Wireless Industry

Robert Darveaux, Tony LoBianco, Lori DeOrio, Andrew Kay, Bob Williams
Skyworks Solutions, Inc.

 

Abstract

2.3

Market and Technology Trends in WBG Materials for Power Electronics Applications

Dr. Hong LIN
Compound Semiconductor Market and Technology Analyst, Yole Développement

 

Abstract

2.4

6-inch VCSEL Wafer Foundry Economics

David Cheskis

ANADIGICS, INC.

 

Abstract

SESSION 3: GaN MANUFACTURING
Chairs: Dane Henry, Qorvo, Inc.
Toshihide Kikkawa, Transphorm

   
3.1

0.15μm GaN MMIC Manufacturing Technology for 2-50 GHz Power Applications
Sabyasachi Nayak, Ming-Yih Kao, Hua-Tang Chen, Trish Smith, Peter Goeller, Weixiang Gao, Jose Jimenez, Shuoqi Chen, Charles Campbell, Gergana Drandova, and Robert Kraft
Qorvo, Inc.

  Abstract
3.2

RF Performance Improvement of 0.25μm GaN HEMT Foundry Technology
Jhih-Han Du, Che-Kai Lin, Sheng-Wen Peng, Fu-Chuan Chu, Kai-Sin Cho, Yue-Ting Lin, Wei-Chou Wang, Walter Wohlmuth
WIN Semiconductors Corp

  Abstract
3.3

Effects of Underlying Metals on Textures of Plated Au films on GaN
Kazuhiro Maeda, Koichiro Nishizawa,Daisuke Suzuki, Toshihiko Shiga and Hitoshi Watanabe
Mitsubishi Electric Corporation

  Abstract
3.4

Enhanced Visual Performance in GaN HEMT Technology
Kai-Sin Cho, Yue-Ting Lin, Wei-Chou Wang, Jhih-Han Du, I-Te Cho, and Walter Wohlmuth
WIN Semiconductors Corp.

  Abstract
3.5

High Power Plastic Packaging with GaN
Quinn D. Martin
MACOM Technology Solutions

  Abstract

SESSION 4: MATERIALS
Chairs: Guoliang Zhou, Skyworks
Kevin Stevens, IQE

   
4.1

A Mechanism and a Solution to non-Uniformity of pHEMT Wafers Grown by MBE Process
Guoliang Zhou, Mark Borek
Skyworks Solutions, Inc.

  Abstract
4.2

Fast and Highly Accurate in-situ Calibration of AlGaAs Ternary Composition for MOVPE-based Growth of Edge-Emitting Diode Lasers
M. Zorn1, O. Schulz3, A.J. Spring Thorpe2,  J.-T. Zettler3
1JENOPTIK Diode Lab GmbH, 2NRC of Canada, 3LayTec AG

  Abstract
4.3

Orderly Array of in-plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-free GaAs Thin Films
Qiang Li, Kar Wei Ng, Kei May Lau
Hong Kong University of Science and Technology

  Abstract
4.4

Fabrication of III-V virtual Substrate on 200 mm Silicon for III-V and Si Devices Integration
David Kohen1, Riko I Made1, Shuyu Bao1,2, Kwang Hong Lee1, Kenneth Eng Kian Lee1, Chuan Seng Tan 2, Soon Fatt Yoon 1,2, Eugene A. Fitzgerald 1,3
1Singapore-MIT Alliance for Research and Technology Center, 2Nanyang Technological University, 3Massachusetts Institute of Technology

  Abstract
4.5

Improvements in Processing - Carrier and Material Impacts
Molly Hladik1, Aric Shorey2
1Brewer Science, Inc, 2Corning, Inc

  Abstract

SESSION 5: METALLIZATION
Chairs: Heribert Zull, Osram Opto Semiconductors
Shiban Tiku, Skyworks Solutions

   
5.1

Dynamics of Surface Treatments and Pre-Cleans for High Volume Wafer Manufacturing
J. Crites1, W. Snodgrass2, L. Luu3 and Collaborators
1Skyworks Solutions Inc., 2Avago Technologies, 3Global Communication Semiconductors LLC

  Abstract
5.2

A Simulation of Wafer Temperature-Time Profile in PVD Process Using an Exponential Model and Its Applications
Xiaokang Huang1, Romek Bobkowski1, Duofeng Yue1, Craig Hall1, Charles Dark1, Arthur McGeown2, Chris Jones2, Paulo Lima2, Paul Rich2
1Qorvo, Inc., 2SPTS Technologies Ltd. 

  Abstract
5.3

Stress Reduction in Metallization using in-situ Stress Measurement and Plasma Assisted Evaporation
Silvia Schwyn Thöny, Jürgen Buchholz, Reinhard Benz

Evatec AG.
  Abstract
5.4

Wafer-to-Wafer Metal Sputter Deposition Process Control by Automatic Deposition Rate Adjustment
Chang’e Weng1, Jinhong Yang1, Ron Herring1, Brian Zevenbergen1, Joel Anderson2, Chris Jones2, Liam Cunnane2 

1Qorvo, Inc., 2SPTS Technologies Ltd.
  Abstract

SESSION 6: GaN MATERIALS
Chairs: John Blevins, Air Force Research Laboratory
Judy Kronwasser, NOVASiC

   
6.1

The Growth of Low Wafer Bow AlGaN/GaN Structure on 200mm Si(111)
Chieh-Chih Huang1, Frank Ried2, Tomas Palacios3, Soo Jin Chua4, Eugene A Fitzgerald5
1Singapore-MIT Alliance for Research and Technology Center, 2AIXTRON SE, 3Department of Electrical Engineering and Computer Science-MIT, 4National University of Singapore, 5Department of Materials Science and Engineering-MIT.

  Abstract
6.2

GaN MOCVD on Si via Single Crystal Rare-Earth Oxide Buffer Layer
Rytis Dargis, Erdem Arkun, Radek Roucka, Andrew Clark
Translucent Inc.

  Abstract
6.3

Characterization of Strained AlGaN/GaN HEMTs on CMP-thinned Si Substrates
Marko J. Tadjer1, Travis J. Anderson2, Andrew D. Koehler2, Jordan D. Greenlee3, Karl D. Hobart2, Fritz J. Kub2

1American Society for Engineering Education, 2United States Naval Research Laboratory, 3National Research Council
  Abstract
6.4

Effect of Capping Structure on High Temperature Annealing of GaN
Jordan D. Greenlee1, Boris N. Feigelson2, Jennifer K. Hite2, Karl D. Hobart2, Fritz J. Kub2, Travis J. Anderson2
1National Research Council, 2Naval Research Laboratory

  Abstract
6.5
Withdrawn
   

SESSION 7: GaN DRY ETCH
Chairs: Jansen Uyeda, Northrop Grumman (AS)
Russ Westerman, Plasma-Therm, LLC

   
7.1

Optimizing the SiC Plasma Etching Process for Manufacturing Power Devices
Haruna Oda, Peter Wood, HIromichi Ogiya, Seita Miyoshi, Osamu Tsuji
SAMCO Inc.

  Abstract
7.2

Electrical Properties of GaN Etched by Low Bias Power Process
Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Keiji Watanabe

Fujitsu Laboratories Ltd.
  Abstract
7.3

SiC / GaN Via Process – in Search for Perfection
Ju-Ai Ruan, Craig Hall, Harold Isom, Tom Nagle

Qorvo, Inc.
  Abstract
7.4

Qualification of Backside Via Etch Process in GaN-on-SiC HEMT Devices
Frank Fan, Minkar Chen, Daniel Hou, David Wang
Global Communication Semiconductors, LLC

  Abstract
7.5

Analysis and Optimization of a Through Substrate Via Etch Process for Silicon Carbide Substrates
Andreas Thies1, Wilfred John1, Stephan Freyer1, Jaime Beltran2, Olaf Krüger1

1Ferdinand-Braun-Institut, 2LayTec AG.
  Abstract

SESSION 8: THERMAL MANAGEMENT FOR HIGH POWER DEVICES
Chairs:  Tom Low, Keysight Technologies
Chang-Hwang Hua, WIN Semiconductors Corp.

   
8.1

Student Presentation
8.1 Measuring the Thermal Conductivity of the GaN Buffer Layer in AlGaN/GaN HEMTs: Effect of Carbon and Iron Doping
M.Power1, J.W. Pomeroy1, Y.Otoki2, T.Tanaka2, J.Wada2, M. Kuzuhara3, W.Jantz4, A.Souzis5, M.Kuball1
1University of Bristol, 2Hitachi Metals, 3University of Fukui, 4SemiMap Scientific Instruments, 5II-VI Wide Bandgap Group

  Abstract
8.2

Rapid Characterization of GaN-on-Diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance
Huarui Sun1, James W. Pomeroy1, Roland B. Simon1, Daniel Francis2, Firooz Faili2, Daniel J. Twitchen2, Martin Kuball1

1University of Bristol, 2Element Six Technologies
  Abstract
8.3

Comparison of Thermal Properties of Packaged AlGaN/GaN HFETs on Si and n-SiC Substrates
R. Zhytnytska1, J. Böcker2, H. Just2, E. Bahat-Treidel1, O. Hilt1, S. Dieckerhoff2, J. Würfl1, G. Tränkle1
1Ferdinand-Braun-Institut, 2Technische Universität Berlin

  Abstract
8.4

Student Presentation
8.4 Improved Thermal Stabilities in Normally-off GaN MIS-HEMTs
Cheng Liu, Hanxing Wang, Shu Yang, Yunyou Lu, Shenghou Liu, Zhikai Tang, Qimeng Jiang, Kevin J. Chen
The Hong Kong University of Science and Technology

  Abstract
8.5

Simulation of the Impact of Through-Substrate Vias on the Thermal Resistance of Compound Semiconductor Devices
Rajesh Baskaran, Allen W. Hanson
MACOM Technology Solutions Inc.

  Abstract

SESSION 9: GaN ANNEALING/PASSIVATION
Chairs:  Scott Sheppard, CREE, Inc.
Paul Pinsukanjana, IntelliEPI

   
9.1

Atomic Layer Deposition for GaN Power Semiconductors
H.C.M. Knoops, Y. Huang, B. Mackenzie, T. R. Sharp, C. J. Hodson, M. Bourke
Oxford Instruments Plasma Technology

  Abstract
9.2

Comparative Study of AlGaN/GaN HEMTs with LPCVD- and PECVD-SiNx Passivation
Xinhua Wang, Sen Huang, Jinhan Zhang, Yingkui Zheng, Ke Wei, Xiaojuan Chen, Guoguo Liu, Tingting Yuan, Weijun Luo, Lei Pang, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao, Xinyu Liu

Chinese Academy of Sciences
  Abstract
9.3

Student Presentation
A Low-Annealing-Temperature Process Using Si-Incorporated Contact Stacks for n-Type III-Nitride Semiconductors
Yi-Che Lee, A F M Saniul Haq, Shyh-Chiang Shen
Georgia Institute of Technology

  Abstract
9.4

Student Presentation
Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
K. Bothe, A. Ma, A. Afshar, P. Motamedi, K. Cadien, D. Barlage
University of Alberta

  Abstract
9.5

Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs
Yohei Kobayashi1, Joel T. Asubar1, Koji Yoshitsugu2, Hirokuni Tokuda1, Masahiro Horita2, Yukiharu Uraoka2, Masaaki Kuzuhara1

1University of Fukui, 2Nara Institute of Science and Technology
  Abstract

SESSION 10: TEST/YIELD
Chairs:  Gene Kohara, Marubeni America Corporation
Robert Sadler, Global Communication Semiconductors, LLC

   
10.1

Improving Return on Invested Capital (ROIC) in PHEMT Technology
Peng (Tom) Cheng, Patrick Carroll, Tom Rogers

Qorvo, Inc.
  Abstract
10.2

Optimization Methodology of Clean Pads Selection for Lifetime and Test Yield on RF bump Wafer Test with Membrane Probe Card
I-Pin Chia, Min-Chang Tu, Paul Yeh

WIN Semiconductor
  Abstract
10.3

Threshold Voltage Extraction Method for 2D Devices with Power-Law µ(nS) Dependence
Vincent Mosser, David Seron, Youcef Haddab

Itron France
  Abstract
10.4

Process Optimization to Improve Known-Good-Die (KGD) Test Accuracy and Wafer Final Yield
Yu Wang, Patrick Carroll, Jing Yao, Zach Reitmeier, Tom O’Brien, Doug Melville

Qorvo, Inc
  Abstract
10.5

Using GaAs Diesort Methods for Efficient High Volume Capacitor Testing
Martin J. Brophy, John Stanback, Thomas Dungan
Avago Technologies

  Abstract

SESSION 11: MANUFACTURING IMPROVMENTS
Chairs:  Corey Nevers, Qorvo, Inc.
David Wang, Global Communication Semiconductors

   
11.1

Seam Defects Caused by Clear Field Mask Chrome Dimensions
Richard Nutter
HRL Laboratories, LLC

  Abstract
11.2

Effect of Tape Liftoff Tool Settings and Plasma Conditions on Metal Peeling from Polyimide Surfaces
Jiang Wang, David Lipka, Sam Mony, Nercy Ebrahimi

Skyworks Solution Inc.
  Abstract
11.3

Effective in-line Monitoring Structures for Critical Dimension Measurement in Photolithography
Chao Wang, Lisa Huynh, Kevin Zoglo

Qorvo, Inc.
  Abstract
11.4

InAlN/GaN HEMTs With Over 100-GHz Ft Using an Improved Y-Gate Process by an i-line Stepper
Hiroyuki Ichikawa, Isao Makabe, Tsuyoshi Kouchi, Ken Nakata, Kazutaka Inoue
Sumitomo Electric Industries, Ltd.

  Abstract
11.5

Rapid Production Readiness Through Process Margin Study: How to Isolate the Epi and Fab Parameters That Really Matter
S. Hurtt, D. Schwartz, J. Yang, S. Nedeljkovic, T. Henderson, F. Pool

Qorvo, Inc.
  Abstract

SESSION 12: GaAs PROCESSING
Chairs:  Jim Crites, Skyworks Solutions
Keith Wieber, Qorvo, Inc.

   
12.1

High Aspect Ratio Individual Source Through Wafer Vias for High Frequency GaAs pHEMT Processes
H.Stieglauer1, E.Dengler1, M.Hosch1, P.Michel2, C.Teysandier2, H.Blanck1

1United Monolithic Semiconductors Germany, 2United Monolithic Semiconductors France
  Abstract
12.2

Student Presentation
A CMOS-compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs
Jianqiang Lin, Dimitri A. Antoniadis, and Jesús A. del Alamo
MIT

  Abstract
12.3

Effect of Pt Thickness on the Gate Sinking in a pHEMT Device
Debdas Pal, Julia Okvath
MACOM

  Abstract
12.4

An Integration of On-Chip High-Q Inductors by Cu Redistribution Layer (RDL) with Bumping for InGaP/GaAs HBT MMIC
Jung-Hao Hsu, Shu-Hsiao Tsai, Shih-Wei Chen, Kay Wu, Cheng-Kuo Lin, and Dennis Williams, Yu-Chi Wang
WIN Semiconductors Corp.

  Abstract
12.5

Highly Linear Ka-Band 0.15µm GaAs Power pHEMT Process for Use in Low-Cost Molded QFN Plastic Package
Michael Hosch1, Hermann Stieglauer1, Charles Teyssandier2, Philippe Auxemery2, Mikael Richard2, Jan Grünenpütt1, Benoît Lambert2, Didier Floriot2 and Hervé Blanck1
1United Monolithic Semiconductors Germany, 2United Monolithic Semiconductors France

  Abstract

SESSION 13: GAN RF DEVICES
Chairs:  Martin Kuball, University of Bristol
David Meyer, Naval Research Lab

   
13.1

Leakage Current and Two-Tone-Linearity Investigations on 0.5µm AlGaN/GaN HEMTs
Bernd Schauwecker, Michael Hosch, Hervé Blanck
United Monolithic Semiconductors

  Abstract
13.2

AlInN/GaN HEMTs on SiC and on Silicon with Regrown Ohmic Contacts by Selective Ammonia MBE
Stefano Tirelli1, Diego Marti1, Lorenzo Lugani2, Marco Malinverni2, J.-F. Carlin2, E. Giraud2, Nicolas Grandjean2, and C. R. Bolognesi1
1Millimeter-Wave Electronics Group, ETH-Zürich, 2ICMP, École Polytechnique Fédérale de Lausanne (EPFL)

  Abstract
13.3

Correlation between Luminescence and Current Collapse in AlGaN/GaN HEMTs
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara

University of Fukui.
  Abstract
13.4

Current Dispersion in Short Channel Al0.32Ga0.68N/GaN HEMTs
K. Y. Osipov, S. A. Chevtchenko, O. Bengtsson, P. Kurpas, F. Brunner, N. Kemf, J. Würfl and G. Tränkle
Ferdinand-Braun-Institut

  Abstract
13.5

Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
Andrew D. Koehler1, Neeraj Nepal2, Marko J. Tadjer3, Rachael L. Myers-Ward1, Virginia D. Wheeler1, Travis J. Anderson1, Michael A. Mastro1, Jordan D. Greenlee4, Jennifer K. Hite1, Karl D. Hobart1, Francis J. Kub1
1Naval Research Laboratory, 2Sotera Defense Solutions, 3ASEE Postdoctoral Fellow Residing at NRL, 4NRC Postdoctoral Fellow Residing at NRL

  Abstract

SESSION 14: III-V DEVICES
Chairs:  Hidetoshi Kawasaki, Sony
Shyh-Chiang Shen, Georgia Tech

   
14.1

Invited Presentation
Field Plate Models Applied to Manufacturability and RF Frequency Analysis
Robert Coffie
RLC Solutions

  Abstract
14.2

ESD Protection Device for HEMT MMICs
Jung-Tao Chung, Shinichiro Takatani, Cheng-Kuo Lin, Hsi-Tsung Lin, Shao-Chang Cheng, Shu-Hsiao Tsai, Cheng-Guan Yuan, Joseph S.M. Liu, Yu-Chi Wang
WIN Semiconductors Corp.

  Abstract
14.3

pHEMT Device Characterization for Current Transient Time Constant and Link to Error Vector Magnitude
S. Nedeljkovic, S. Hurtt
Qorvo, Inc.

  Abstract
14.4

Student Presentation
Development of an InP/GaAsSb DHBT MMIC Process with a Teflon AF Interlevel Dielectric
Ralf Flückiger, Rickard Lövblom, Maria Alexandrova, Hansruedi Benedickter, Olivier Ostinelli, C. R. Bolognesi
Millimeter-Wave Electronics Group, ETH-Zürich

  Abstract
14.5

Student Presentation
Characterization of Heterojunction Bipolar Phototransistor with Integrated Two-Section Light-Emitting Transistors
Cheng-Han Wu1, Yuan-Fu Hsu2, Gong-Sheng Cheng2, Chao-Hsin Wu1,2
1Graduate Institute of Electronics Engineering, 2Graduate Institute of Photonics and Optoelectronics, National Taiwan University

  Abstract

SESSION 15: GaN POWER ELECTRONICS
Chairs: Drew Hanser, Veeco Instruments, Inc.
Chris Youtsey, MicroLink Devices

   
15.1

Invited Presentation
Vertical Power Semiconductor Devices Based on Bulk GaN Substrates
I.C. Kizilyalli, X. Xin, T. Prunty, M. Raj, O. Aktas
Avogy Inc.

  Abstract
15.2

Above 2000 V Breakdown Voltage on 2 µm-thick Buffer Ultrathin Barrier AlN/GaN-on-Silicon Transistors
N. Herbecq, I. Roch-Jeune, A. Linge, M. Zegaoui, F. Medjdoub
Institute of Electronics, Microelectronics and Nanotechnology

  Abstract
15.3

EC-2.0eV Trap-Related Dynamic RON in GaN/Si MISHEMTs
W.Sun, A. Sasikumar, A. Arehart, S. Ringel
Ohio State University

  Abstract
15.4

Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors
S. Warnock, J. A. del Alamo

Massachusetts Institute of Technology
  Abstract
15.5

RDSON Stability of GaN High Voltage Power Devices Post Long-Term Stress: A New Method to Screen Unstable RDSON Performers
Hyeongnam Kim, H. Kannan, Y. Pan, D. Veereddy, R. Garg, C. Zhu, J. Sun, Bhargav Pandya, D. Smith, S. Hardikar, M. Imam, T. McDonald
International Rectifier Corp.

  Abstract

SESSION 16: GaN RELIABILITY
Chairs: Shawn Burnham, HRL Laboratories
Karen Moore, Freescale

   
16.1

Invited Presentation
GaN HEMT Lifetesting – Characterizing Diverse Mechanisms
Bruce M. Paine, Steve R. Polmanter, Vincent T. Ng, Neil T. Kubota, Carl R. Ignacio

Boeing Network and Space Systems
  Abstract
16.2

Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons
T.J. Anderson1, A.D. Koehler1, P. Specht2, B.D. Weaver1, J.D. Greenlee1, M.J. Tadjer1, J.K. Hite1, M.A. Mastro1, M. Porter3, M. Wade3, O.C. Dubon2, M. Luysberg4, K.D. Hobart1, T.R. Weatherford3, F.J. Kub1
1Naval Research Laboratory, 2University of California, Berkeley, 3Naval Postgraduate School, 4Ernst-Ruska Research Center

  Abstract
16.3

Drain - Bulk Leakage Current Mechanisms and Model for Power GaN HEMT on Si Substrate
Mirwazul Islam1, Grigory Simin1, Naveen Tipirneni2, Jungwoo Joh2, Vijay Krishnamurthy2, Sameer Pendharkar2

1University of South Carolina, 2Texas Instruments, Dallas, TX
  Abstract
16.4

Hot-Phonon Effect on the Reliability of GaN-Based Heterostructure Field-Effect Transistors
Cemil Kayis1, Hadis Morkoç2

1ASELSAN, Inc., 2Virginia Commonwealth University
  Abstract

SESSION 17: POSTER
Chairs: Nick Kolarich, Epiworks
Kelli Rivers, Vacuum Engineering & Materials Co.

   
17.1

Student Presentation
0.18 mm E/D-mode pHEMT using I-line Photolithography for Microwave Application
Min-Li Chou1, Yi-Shun Lin2, Ming-Tai Wu2, Sheng-Chun Wang2, Hsin-Chi Wang2, Li-Chung Lee2, Zhi-Peng Lin2, Chih-Yu Tseng2, Fred CH Lin2, Pang-Shao Chen2, Houng-Chi Wei2, Chian_Gau1, Shih1, Hsien-Chin Chiu1
1Chang Gung University, 2Wavetek Microelectronics Corp.

  Abstract
17.2

Student Presentation
6A-Operating Current GaN-Based Enhancement-Mode High Electron Mobility Transistors
Chih-Hao Wang, Liang-Yu Su, Finella Lee, Jian-Jang Huang
National Taiwan University

  Abstract
17.3

Student Presentation
Enhancement of Cut-off Frequency and Optical Bandwidth in Light-Emitting Transistors at High Temperature
I-Te Lee, Chao-Hsin Wu

National Taiwan University
  Abstract
17.4

Micromachined p-GaN Gate Normally-off PowerHEMT with an Optimized Air-Bridge Matrix Layout Design
Chih-Wei Yang1, Hsiang-Chun Wang1, Hsien-Chin Chiu1, Chien-Kai Tung2, Tsung-Cheng Chang2, Schang-jing Hon2
1Chang Gung University, 2Huga Optotech Inc.

  Abstract
17.5

Optical Frequency Response of GaN-based Light-emitting Diodes with Embedded Photonic Crystals
Yu-Feng Yin, Yen-Hsiang Hsu, Liang-Yu Su, Yuan-Fu Hsu, Li-Cheng Chang, Chao-Hsin Wu, JianJang Huang

National Taiwan University
  Abstract
17.6

Si-Ge-Sn based Compound Semiconductors for Photonic Applications
Radek Roucka, Andrew Clark, Nam Pham
Translucent Inc.

  Abstract
17.7
Withdrawn
   
17.8

Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs
Hyung Sup Yoon, Byoung Gue Min, Jong Min Lee, Dong Min Kang, Ho Kyun Ahn, Hae Cheon Kim, Jong Won Lim

Electronics and Telecommunications Research Institute
  Abstract
17.9

Student Presentation
Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers
Yun-Hsiang Wang1,4, Yung C. Liang1, Ganesh S. Samudra1, Bo-Jhang Huang2, Ya-Chu Liao2, Chih-Fang Huang2, Wei-Hung Kuo3, Guo-Qiang Lo4
1National University of Singapore, 2National Tsing Hua University, 3Industrial Technology Research Institute, 4A*STAR Institute of Microelectronics

  Abstract