GaAs ManTech On-Line Digest Search


search engine by freefind	advanced

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2010 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form
or contact Margaret Doyle at mdoyle@gaasmantech.org

	Click title for full PDF version of paper	Page	Abstract
1: Plenary 1
1.1	Green Semiconductor Manufacturing - Potential New Routes Using Aqueous Solultion Chemistry	Page 3	Abstract
	David C. Johnson, University of Oregon, Darren Johnson, University of Oregon, John F. Wager, Oregon State University and Douglas Keszler, Oregon State University
1.2	Site Environmental Sustainability Achievements at Avago Technologies, Fort Collins, CO	Page 7	Abstract
	Steve Wolley, Avago Technologies
1.3	Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity	Page 13	Abstract
	Cong Huang, Delft Institute of Microsystems and Nanoelectronics (DIMES), Koen Buisman, Delft Institute of Microsystems and Nanoelectronics (DIMES), Peter J. Zampardi, Skyworks Solutions, Lis K. Nanver, Delft Institute of Microsystems and Nanoelectronics (DIMES), Lawrence E. Larson, University of California, San Diego and Leo C. N. de Vreede, Delft Institute of Microsystems and Nanoelectronics (DIMES)
2: Plenary 2 - RF Modules
2.1	Market & Technology of RF Modules, Focusing on Front End Modules for Cellular Terminals	Page 21	Abstract
	Y. Andoh, Navian, Inc.
2.2	Panel Discussion -TriQuint	Page 25	Abstract
	Frank Juskey, TriQuint Semiconductor
2.3	Panel Discussion -Skyworks	Page 27	Abstract
	Peter J. Zampardi, Skyworks Solutions
2.4	Panel Discussion - Avago	Page 28	Abstract
	Ray Parkhurst, Avago Technologies
2.5	Panel Discussion - RF Micro Devices	Page 29	Abstract
	Frank Stewart, RF Micro Devices
3a: Business Analysis
3a.1.	Market Trends for Compound Semiconductor Enabled Devices, 2010 Update	Page 33	Abstract
	Bruce Bernhardt, Research in Motion
3a.2	The Evolution of the BTS Market: Going Green and Transitioning from a Hardware to Software/Services Oriented Business Model	Page 37	Abstract
	Earl J. Lum, EJL Wireless
3b: Team Torture
3b.1	Team Torture: Developing a Standard Qualification for Power Amplifier Modules	Page 43	Abstract
	Bill Roesch, TriQuint Semiconductor, Leslie Marchut, RF Micro Devices, Bryan Shelton, Mimix Broadband, Alex Young, ANADIGICS, Steve Randle, Avago Technologies, Lance Rushing, Skyward Solutions and CS Bhasker, Skyward Solutions
4: Device Technology
4.1	Improvement in Yield and Assurance in Power Performance for Quarter-Micron Optical Gate 8V Power pHEMT Technology	Page 47	Abstract
	Cheng-Guan Yuan, WIN Semiconductor, S. M. Joseph Liu, WIN Semiconductor, Clement Huang, WIN Semiconductor, Jiro Ho, WIN Semiconductor, Frank Chen, WIN Semiconductor, Chien-Liang Chan, WIN Semiconductor and Jung-Tao Chung, WIN Semiconductor
4.2	W-Band Penta-Composite Channel InAlAs/InGaAs Metamorphic HEMT for High Power Application and Comparison with Pseudomorphic HEMT	Page 51	Abstract
	Partha Mukhopadhyay, Indian Institute of Technology - Kharagpur, Sudip Kundu, Indian Institute of Technology - Kharagpur, Palash Das, Indian Institute of Technology - Kharagpur, Saptarshi Pathak, Indian Institute of Technology - Kharagpur, Edward Y Chang, National Chiao Tung University and Dhrubes Biswas, Indian Institute of Technology - Kharagpur
4.3	A Foundry-Ready Ultra High fT InP/InGaAs DHBT Technology	Page 55	Abstract
	Yufei Yang, Global Communication Semiconductors, Dave Rasbot, Global Communication Semiconductors, Chung-Hsu Chen, Global Communication Semiconductors, Bryan Lee, Global Communication Semiconductors, Wing Yau, Global Communication Semiconductors, Daniel Hou, Global Communication Semiconductors and Dave Wang, Global Communication Semiconductors
4.4	The Development of 0.5um High Linearity and Good Thermal Stability AlGaAs/GaAs HFET for Wireless Infrastructure Application	Page 59	Abstract
	Cheng-Kuo Lin, WIN Semiconductor, Shu-Hsiao Tsai, WIN Semiconductor, Chao-Hong Chen, WIN Semiconductor, Ru-Yong Chen, WIN Semiconductor, Jen-Hao Huang, WIN Semiconductor and Yu-Chi Wang, WIN Semiconductor
5: Reliability
5.1	High Volume Test Methodology for HBT Device Ruggedness Characterization	Page 65	Abstract
	Cristian Cismaru, Skyworks Solutions, Hal Banbrook, Skyworks Solutions and Peter J. Zampardi, Skyworks Solutions
5.2	TaN Resistor Reliability Studies	Page 69	Abstract
	Gergana I. Drandova, TriQuint Semiconductor and Kenneth D. Decker, TriQuint Semiconductor
5.3	Investigation and Improvement of Early MIM Capacitor Breakdown with a Focus on Edge Related Failures	Page 73	Abstract
	Jason Gurganus, Cree, Inc., Terry Alcorn, Cree, Inc., Andy MacKenzie, Cree, Inc. and Zoltan Ring, Cree, Inc.
5.4	High Voltage Capacitors with Increased Lifetimes Using SiN Dielectrics	Page 77	Abstract
	Robert Slater, TriQuint Semiconductor
6: Manufacturing
6.1	Skyworks Solutions Six Inch GaAs Conversion	Page 83	Abstract
	Glenn Hafer, Skyworks Solutions
6.2	Automation for Better Fab Efficiency	Page 87	Abstract
	Nirav Thakker, Skyworks Solutions, Doug Beasley, Skyworks Solutions, Alma Lopez, Skyworks Solutions and Glenn Hafer, Skyworks Solutions
6.3	Yield and Efficiency Improvements Using Multi-Field Hall Measurements for High Volume pHEMT Production	Page 91	Abstract
	Robert Yanka, RF Micro Devices, Likang Li, RF Micro Devices and Andrew Shelton, RF Micro Devices
6.4	Effective Manufacturing Utilizing Mass Metrology	Page 95	Abstract
	Mark Berry, Metryx, Inc., Liam Cunnane, Metryx, Inc., Adrian Kiermasz, Metryx, Inc. and Michael T. McClure, TriQuint Semiconductor
7: GaN Growth & Characterization
7.1	Comparative High-Temperature DC Characterization of HEMTs with GaN and AlGaN Channel Layers	Page 101	Abstract
	M. Hatano, University of Fukui, N. Kunishio, University of Fukui, H. Chikaoka, University of Fukui, J. Yamazaki, University of Fukui, Z. B. Makhzani, University of Fukui, N. Yafune, Japan R & D Center for Metal, Sharp Corp., K. Sakuno, Sharp Corp., S. Hashimoto, Sumitomo Electric Industries, K. Akita, Sumitomo Electric Industries, Y. Yamamoto, University of Fukui and M. Kuzuhara, University of Fukui
7.2	Growth of LEC Structures on Six Inch Sapphire: Challenges and Improvements	Page 105	Abstract
	R. Schreiner, AIXTRON, A. Alam, AIXTRON, H. Protzmann, AIXTRON, B. Schineller, AIXTRON and M. Heuken, AIXTRON
7.3	Benchmarking of Thermal Boundary Resistance of GaN-SiC Interfaces for AlGaN/GaN HEMTs: US, European and Japanese Suppleirs	Page 109	Abstract
	Martin Kuball, University of Bristol, Nicole Killat, University of Bristol, Athikom Manoi, University of Bristol and James W. Pomeroy, University of Bristol
7.4	Ultra-Low Ohmic Contacts to N-Polar GaN HEMTs by In(Ga)-Based Source-Drain Regrowth by Plasma MBE	Page 111	Abstract
	Sansaptak Dasgupta, University of California, Santa Barbara, Nidhi, University of California, Santa Barbara, David F. Brown, University of California, Santa Barbara, T. E. Mates, University of California, Santa Barbara, Stacia Keller, University of California, Santa Barbara, James S. Speck, University of California, Santa Barbara and Umesh K. Mishra, University of California, Santa Barbara
8: Process Metal
8.1	Wafer Level Bump Technology for III-V MMIC Manufacturing	Page 117	Abstract
	X. Zeng, Northrop Grumman Space Technology, P. Chang-Chien, Northrop Grumman Space Technology, K. Hennig, Northrop Grumman Space Technology, C. Chueng, Northrop Grumman Space Technology, T. Chung, Northrop Grumman Space Technology, G. Akerling, Northrop Grumman Space Technology, J. Gan, Northrop Grumman Space Technology, J. Uyeda, Northrop Grumman Space Technology, M. Barsky, Northrop Grumman Space Technology and A. Oki, Northrop Grumman Space Technology
8.2	Development of an I-Line Negativge Resist Process for High Resolution Liftoff Applications	Page 119	Abstract
	Suzanne Combe, TriQuint Semiconductor and Elda Clarke, TriQuint Semiconductor
8.3	Challenges of Transferring a TaN Reactive Sputter Deposition Process from a Batch Tool to a Single Wafer Tool During a 4" to 6" Wafer Conversion	Page 123	Abstract
	Erika Schutte, Skyworks Solutions, Heather Knoedler, Skyworks Solutions and Ernesto Ambrocio, Skyworks Solutions
8.4	Effects of Electron Radiation Generated During E-Beam Evaporation on a Photoresist Liftoff Process	Page 127	Abstract
	Kezia Cheng, Skyworks Solutions, Minh Le, Skyworks Solutions, Donald Mitchell, Skyworks Solutions and Larry Hanes, Skyworks Solutions
8.5	Improved Emitter Resistance Through the Use of Barrier Metals	Page 131	Abstract
	Alan Bratschun, Avago Technologies and T. C. Tsai, WIN Semiconductor
9: GaN Devices and Manufacturing
9.1	High Efficiency and Low Leakage AlGaN/GaN HEMTs for a Robust, Reproducible and Reliable X-Band MMIC Space Technology	Page 137	Abstract
	P. Waltereit, Fraunhofer Institute - Freiburg, W. Bronner, Fraunhofer Institute - Freiburg, R. Kiefer, Fraunhofer Institute - Freiburg, R. Quay, Fraunhofer Institute - Freiburg, J. Kuehn, Fraunhofer Institute - Freiburg, F. van Raay, Fraunhofer Institute - Freiburg, M. Dammann, Fraunhofer Institute - Freiburg, S. Mueller, Fraunhofer Institute - Freiburg, C. Libal, Fraunhofer Institute - Freiburg, T. Meier, Fraunhofer Institute - Freiburg, M. Mikulla, Fraunhofer Institute - Freiburg and O. Ambacher, Fraunhofer Institute - Freiburg
9.2	Stable and Reproducible AlGaN/GaN HFET Processing Highly Tolerant for Epitaxial Quality Variation	Page 141	Abstract
	P. Kurpas, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, I. Selvanathan, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, M. Schultz, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, H. Sahin, United Monolithic Semiconductors, P. Ivo, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, M. Matalla, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, J. Splettstoesser, United Monolithic Semiconductors, A. Barnes, ESA/ESTEC and J. Wuerfl, Ferdinand Braun Institut fuer Hoechstfrequenztechnik
9.3	Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation	Page 145	Abstract
	Hongwei Chen, Hong Kong University of Science and Technology, Maojun Wang, Hong Kong University of Science and Technology and Kevin J. Chen, Hong Kong University of Science and Technology
9.4	Optimization of AlGaN/GaN HEMT Ohmic Contacts for Improved Surface Morphology with Low Contact Resistance	Page 149	Abstract
	H. P. Xin, Northrop Grumman Space Technology, S. Poust, Northrop Grumman Space Technology, W. Sutton, Northrop Grumman Space Technology, D. Li, Northrop Grumman Space Technology, D. Lam, Northrop Grumman Space Technology, I. Smorchkova, Northrop Grumman Space Technology, R. Sandhu, Northrop Grumman Space Technology, B. Heying, Northrop Grumman Space Technology, J. Uyeda, Northrop Grumman Space Technology, M. Barsky, Northrop Grumman Space Technology, M. Wojtowicz, Northrop Grumman Space Technology and R. Lai, Northrop Grumman Space Technology
9.5	Impact of Gate Metal Fringe Removal on Small Signal RF Gain of AlGaN/GaN HEMTs	Page 153	Abstract
	Reza Behtash, United Monolithic Semiconductors, James R. Thorpe, United Monolithic Semiconductors, S. Held, United Monolithic Semiconductors, Dominik Schrade-Koehn, University of Ulm and Herve Blanck, United Monolithic Semiconductors
10: Process Etching
10.1	Elimination of Yield Loss Due to Rogue Polyimide Vias	Page 159	Abstract
	David Crawford, Skyworks Solutions, Yelda Rescei, Skyworks Solutions, Manjeet Singh, Skyworks Solutions, Dragana Barone, Skyworks Solutions, Samuel Mony, Skyworks Solutions and Shiban Tiku, Skyworks Solutions
10.2	The Use of Optical Emission Spectroscopy to Solve Manufacturing Scaling Issues	Page 163	Abstract
	A. J. Stoltz, US Army REDCOM, J. D. Benson, US Army REDCOM and P. J. Smith, US Army REDCOM
10.3	The Use of Optical Emission Interferometry for Controlled Etching of III-V Materials	Page 167	Abstract
	D. Johnson, Plasma-Therm, D. Geerpuram, Plasma-Therm, C. Johnson, Plasma-Therm, L. Martinez, Plasma-Therm and J. Plumhoff, Plasma-Therm
10.4	Electrochemical Etching of Ion Implanted Channel Regions in GaAs	Page 171	Abstract
	J. Crites, Cobham DES, J. Dilley, Cobham DES, S. Kittenger, Cobham DES, W. Pickens, Cobham DES, W. Polhamus, Cobham DES, M. Balzan, Cobham DES and M. Drinkwine, Cobham DES
10.5	Pre-Photolithographic GaAs Surface Treatment for Improved Photoresist Adhesion During Wet Chemical Etching and Improved Wet Etch Profiles	Page 175	Abstract
	A. J. Grine, Sandia National Laboratory, J. B. Clevenger, Sandia National Laboratory, M. J. Martinez, Sandia National Laboratory, F. H. Austin, LMATA, P. S. Vigil, LMATA, K. L. Romero, LMATA, R. Timon, Sandia National Laboratory, G. A. Patrizi, Sandia National Laboratory and C. T. Sullivan, Sandia National Laboratory
11: Emerging GaN-Based Barrier Structures
11.1	Ultra-Thin Barrier Layers for mm Wave Frequencies in III-N HEMT Technologies	Page 181	Abstract
	J. K. Gillespie, Air Force Research Lab, A. Crespo, Air Force Research Lab, K. Chabak, Air Force Research Lab, M. Kossler, Air Force Research Lab, V. Trimble, Air Force Research Lab, M. Trejo, Air Force Research Lab, G. D. Via, Air Force Research Lab, B. Winningham, Air Force Research Lab, B. Poling, Wyle Labs and D. Walker, Jr., Wyle Labs
11.2	High Performance InAlN/GaN HEMTs on SiC Substrates	Page 185	Abstract
	Han Wang, Massachusetts Institute of Technology, Jinwook W. Chung, Massachusetts Institute of Technology, Xiang Gao, IQE RF, Shiping Guo, IQE RF and Tomas Palacios, Massachusetts Institute of Technology
11.3	N-Face GaN-Based Microwave Metal-Insulator-Semiconductor High Electron Mobility Transistors by Plasma-Assisted Molecular Beam Epitaxy	Page 189	Abstract
	Man Hoi Wong, University of California, Santa Barbara, Yi Pei, University of California, Santa Barbara, David F. Brown, University of California, Santa Barbara, James S. Speck, University of California, Santa Barbara, Umesh K. Mishra, University of California, Santa Barbara, Michael Schuette, Ohio State University, Hyeongnam Kim, Ohio State University, Venkatesh Balasubramanian, Ohio State University and Wu Lu, Ohio State University
11.4	Molecular Beam Epitaxy Regrowth of Ohmics in Metal-Face AlN/GaN Transistors	Page 193	Abstract
	Chuanxin Lian, University of Notre Dame, Yu Cao, University of Notre Dame, Ronghua Wang, University of Notre Dame, Guowang Li, University of Notre Dame, Tom Zimmermann, University of Notre Dame, Debdeep Jena, University of Notre Dame and Huili Xing, University of Notre Dame
11.5	Demonstration of Enhancement Mode AlN/Ultrathin AlGaN/GaN HMETs Using a Selective Wet Etch Approach	Page 197	Abstract
	T. J. Anderson, Naval Research Laboratory, M. J. Tadjer, University of Maryland, M. A. Mastro, Naval Research Laboratory, J. K. Hite, Naval Research Laboratory, K. D. Hobart, Naval Research Laboratory, C. R. Eddy, Jr., Naval Research Laboratory and F. J. Kub, Naval Research Laboratory
12: Emerging Technology A
12.1	Compound Semiconductor Based Tunnel Transistor Logic	Page 203	Abstract
	Suman Datta, Pennsylvania State University, S. Mookerjea, Pennsylvania State University, D. Mohata, Pennsylvania State University, L. Liu, Pennsylvania State University, V. Saripalli, Pennsylvania State University, V. Narayanan, Pennsylvania State University and T. Mayer, Pennsylvania State University
12.2	Enhancement-Mode Pseudomorphic In(0.22)Ga(0.78)As-Channel MOSFETs with InAlP Native Oxide Gate Dielectric	Page 207	Abstract
	Xiu Xing, University of Notre Dame and Patrick J. Fay, University of Notre Dame
12.3	A Study on the Base Recombination Current in NPN GaN/InGaN DHBTs	Page 211	Abstract
	Yi-Che Lee, Georgia Institute of Technology, Hee-Jin Kim, Georgia Institute of Technology, Yun Zhang, Georgia Institute of Technology, Suk Choi, Georgia Institute of Technology, Russell D. Dupuis, Georgia Institute of Technology, Jae-Hyun Ryou, Georgia Institute of Technology and Shyh-Chiang Shen, Georgia Institute of Technology
12.4	Recent Progress in Rare Earth-Doped Semiconductors	Page 215	Abstract
	Yasufumi Fujiwara, Osaka University, Atsushi Nishikawa, Osaka University and Yoshikazu Terai, Osaka University
13: GaN Power Switching
13.1	GaN on Si-Based Power Devices: An Opportunity to Significantly Impact Global Energy Consumption	Page 221	Abstract
	Michael Briere, ACCO Enterprises
13.2	GaN-on-Si for Power Conversion	Page 225	Abstract
	M. Germain, IMEC, J. Derluyn, IMEC, M. Van Hove, IMEC, F. Medjdoub, IMEC, J. Das, IMEC, D. Marcon, IMEC, S. Degroote, IMEC, K. Cheng, IMEC, M. Leys, IMEC, D. Visalli, IMEC, P. Srivastava, IMEC, K. Geens, IMEC, J. Viaene, IMEC, B. Sijmus, IMEC, S. Decoutere, IMEC and G. Borghs, IMEC
13.3	AlGaN/GaN Schottky Barrier Diodes Employing Diamond-Like Carbon Passivation	Page 229	Abstract
	Ogyun Seok, Seoul National University, Young-Hwan Choi, Seoul National University, Minki Kim, Seoul National University, Jumi Kim, Sungkyunkwan University, Byungyou Hong, Sungkyunkwan University and Min-Koo Han, Seoul National University
13.4	AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punch-Through Breakdown Immunity and Low On-Resistance	Page 233	Abstract
	Chunhua Zhou, Hong Kong University of Science and Technology, Wanjun Chen, Hong Kong University of Science and Technology, Edwin L. Piner, Nitronex Corp. and Kevin J. Chen, Hong Kong University of Science and Technology
13.5	High Breakdown Voltage AlGaN/GaN HEMTs Emplying Recessed Gate Edge Structure	Page 237	Abstract
	Minki Kim, Seoul National University, Young-Hwan Choi, Seoul National University, Jiyong Lim, Seoul National University, Young-Shil Kim, Seoul National University, Ogyun Seok, Seoul National University and Min-Koo Han, Seoul National University
14: Emerging Technology B
14.1	Silicon Carbide Micro/Nano Systems for Extreme Environment	Page 243	Abstract
	Fang Liu, University of California, Berkeley and Roya Maboudian, University of California, Berkeley
14.2	Record Cell Efficiencies Hold Promising Future for Thin-Film Photovoltaics	Page 245	Abstract
	Chris Constantine, Oerlikon Solar
14.3	Design and Layout of Multi-GHz Operation of Light-Emitting Diodes	Page 247	Abstract
	Chao-Hsin Wu, University of Illinois, Gabriel Walter, University of Illinois, Han Wui Then, University of Illinois and Milton Feng, University of Illinois
14.4	High Output Power Density and Low Leakage Current of InGaN/GaN Nanorod Light Emitting Diodes with Mechanical Polishing Process	Page 251	Abstract
	Liang-Yi Chen, National Taiwan University, Ying-Yuan Huang, National Taiwan University, Chun-Siang Chang, National Taiwan University and Jian-Jang Huang, National Taiwan University
15: Backside Processing
15.1	Backside Process Considerations for Fabricating Millimeter-Wave GaN HEMT MMICs	Page 257	Abstract
	Naoya Okamoto, Fujitsu and Fujitsu Laboratories, Toshihiro Ohki, Fujitsu and Fujitsu Laboratories, Kozo Makiyama, Fujitsu and Fujitsu Laboratories, Atsushi Yamada, Fujitsu and Fujitsu Laboratories, Satoshi Masuda, Fujitsu and Fujitsu Laboratories, Masahito Kanamura, Fujitsu and Fujitsu Laboratories, Yoichi Kamada, Fujitsu and Fujitsu Laboratories, Kenji Imanishi, Fujitsu and Fujitsu Laboratories, Hisao Shigematsu, Fujitsu and Fujitsu Laboratories, Toshihide Kikkawa, Fujitsu and Fujitsu Laboratories, Kazukiyo Joshin, Fujitsu and Fujitsu Laboratories and Naoki Hara, Fujitsu and Fujitsu Laboratories
15.2	Mobile Electrostatic Carrier (MEC) for a GaAs Wafer Backside Manufacturing Process	Page 261	Abstract
	H. Stieglauer, United Monolithic Semiconductors, J. Noesser, United Monolithic Semiconductors, A. Miller, United Monolithic Semiconductors, M. Lanz, United Monolithic Semiconductors, D. Oettlin, United Monolithic Semiconductors, G. Jonson, United Monolithic Semiconductors, D. Behammer, United Monolithic Semiconductors, C. Landesberger, Fraunhofer Institute - Munich, H.-P. Spoehrle, Fraunhofer Institute - Munich and K. Bock, Fraunhofer Institute - Munich
15.3	Low RF Power SiC Substrate Via Etch	Page 267	Abstract
	Ju-Ai Ruan, TriQuint Semiconductor, Sam Roadman, TriQuint Semiconductor and Wade Skelton, TriQuint Semiconductor
15.4	Stress Suppression of Backside Metal in GaAs Devices	Page 271	Abstract
	Koichiro Nishizawa, Mitsubishi Electric, Katsuhisa Kitano, Mitsubishi Electric and Hirohumi Nakano, Mitsubishi Electric
16: Thermal & Electrical Characterization
16.1	Evaluating pHEMT Process Improvements Using Wafer Level RF Tests	Page 277	Abstract
	James Oerth, Skyworks Solutions, Stephen Cousineau, Skyworks Solutions and Sushila Singh, Skyworks Solutions
16.2	Degradation of pHEMT Performance in BiFETs Caused by Thermal History During HBT Growth, and Suggestions for Improvement	Page 281	Abstract
	Junichiro Takeda, Hitachi Cable, Ltd., Ryota Isono, Hitachi Cable, Ltd., Shinjiro Fujio, Hitachi Cable, Ltd., Hiroyuki Kamogawa, Hitachi Cable, Ltd., Masae Sahara, Hitachi Cable, Ltd., Takeshi Meguro, Hitachi Cable, Ltd. and Yohei Otoki, Hitachi Cable, Ltd.
16.3	Failure Investigations on AlGaN/GaN HEMTs for Different Sheet Resistances by Means of Raman Thermography	Page 285	Abstract
	Helmut Jung, United Monolithic Semiconductors, Michael Hosch, University of Ulm, Reza Behtash, United Monolithic Semiconductors, James R. Thorpe, United Monolithic Semiconductors, Franck Bourgeois, United Monolithic Semiconductors, Stefanie Held, United Monolithic Semiconductors, Herve Blanck, United Monolithic Semiconductors, Andrei Sarua, University of Bristol, Nicole Killat, University of Bristol, Martin Kuball, University of Bristol and Thomas Roedle, NXP Semiconductors
16.4	Non-Destructive Determination of the Lateral Thermal Conductivity of Novel Substrate Materials Using Thermal Infrared Microscopy	Page 289	Abstract
	E. R. Heller, Air Force Research Lab, K. Chabak, Air Force Research Lab, V. Miller, Air Force Research Lab, D. Walker, Jr., Air Force Research Lab, M. Trejo, Air Force Research Lab, M. Kossler, Air Force Research Lab, J. K. Gillespie, Air Force Research Lab, A. Crespo, Air Force Research Lab, R. Vetury, RF Micro Devices and G. D. Via, Air Force Research Lab
16.5	Continuous Improvement of Material Characterization Methodology Through Gage Repeatability and Reproducibility Studies	Page 295	Abstract
	Arun Chawla, Skyworks Solutions, Mark Borek, Skyworks Solutions and Guoliang Zhou, Skyworks Solutions
17: Device Packaging Innovation
17.1	Flip-Chip Assembled 7GHz Ultra-Low Phase Noise InGaP HBT Oscillator	Page 299	Abstract
	Li-Han Hsu, National Chiao Tung University, Dan Kuylenstierna, Chalmers University of Technology, Herbert Zirath, Chalmers University of Technology, Edward Yi Chang, National Chiao Tung University and Chin-Te Wang, National Chiao Tung University
17.2	EM Simulation and Development of Wafer-Level Micro-Packaging Technique for GaAs-Based RF MEMS Switches	Page 303	Abstract
	Sandeep Chaturvedi, Gallium Arsenide Enabling Technology Center, Sangam V. Bhalke, Gallium Arsenide Enabling Technology Center, Mahadeva K. Bhat, Solid State Research Lab - Timarpur, G. Sai Saravanan, Gallium Arsenide Enabling Technology Center, R. Muralidharan, Gallium Arsenide Enabling Technology Center and Shiban K. Koul, Indian Institute of Technology - Delhi
17.3	Novel Packaging Solutions for GaN Power Electronics: Silver-Diamond Composite Packages	Page 307	Abstract
	M. Faqir, University of Bristol, T. Batten, University of Bristol, T. Mrotzek, Plansee SE, S. Knippscheer, Plansee SE, L. Chalumeau, Egide, M. Massiot, Egide, M. Buchta, United Monolithic Semiconductors, James R. Thorpe, United Monolithic Semiconductors, Herve Blanck, United Monolithic Semiconductors, S. Rochette, Thales Alenia Space, O. Vendier, Thales Alenia Space and Martin Kuball, University of Bristol
17.4	Quilt Packaging: A Robust Coplaner Chip-to-Chip Interconnect Offering Very High Bandwidth	Page 309	Abstract
	David Kopp, University of Notre Dame, M. Ashraf Khan, University of Notre Dame, Scott Garvey, University of Notre Dame, Kristen Anderson, University of Notre Dame, Jason Kulick, University of Notre Dame, Alfred M. Kriman, University of Notre Dame, Gary H. Bernstein, University of Notre Dame and Patrick J. Fay, University of Notre Dame
17.5	Cavity Structure GaAs FETs with High Humidity Resistance	Page 313	Abstract
	Yasuki Aihara, Mitsubishi Electric, Toshiaki Kitano, Mitsubishi Electric, Kazuyo Endo, Mitsubishi Electric, Kenji Hosogi, Mitsubishi Electric and Hiroshi Fukumoto, Mitsubishi Electric
18: Interactive Forum
18.1	Sub Half-Micron Structures with Profile Control on Compound Semiconductor Substrates based on Conventional i-Line Lithography	Page 319	Abstract
	Dominik Schrade-Koehn, University of Ulm, Philipp Leber, University of Ulm, Reza Behtash, United Monolithic Semiconductors, Herve Blanck, United Monolithic Semiconductors and Hermann Schumacher, University of Ulm
18.2	Backside SIMS Analysis and Accelerated Thermal Aging of Optimally Alloyed Ohmic Contacts to MESFETs	Page 323	Abstract
	G. Sai Saravanan, Gallium Arsenide Enabling Technology Center, Mahadeva K. Bhat, Solid State Research Lab - Timarpur, Sandeep Chaturvedi, Gallium Arsenide Enabling Technology Center, M. N. Mudholkar, Gallium Arsenide Enabling Technology Center and R. Muralidharan, Gallium Arsenide Enabling Technology Center
18.3	Data Analysis for Yield Improvement Using TIBCO Spotfire Data Analysis Software	Page 327	Abstract
	Andrew Choo, TriQuint Semiconductor and Thorsten Saeger, TriQuint Semiconductor
18.4	LED Structure Grown on 200mm Sapphire and Silicon Substrates	Page 333	Abstract
	R. Schreiner, AIXTRON, A. Boyd, AIXTRON, O. Rockenfeller, AIXTRON, J. Kaeppeler, AIXTRON, B. Schineller, AIXTRON and M. Heuken, AIXTRON
18.5	TaN Resistor Pr18.5.098.pdfocess Development and Integration	Page 337	Abstract
	M. J. Martinez, Sandia National Laboratory, F. H. Austin, LMATA, J. B. Clevenger, Sandia National Laboratory, A. J. Grine, Sandia National Laboratory, G. A. Patrizi, Sandia National Laboratory, K. Romero, LMATA, P. S. Vigil, LMATA, S. Wolfley, Sandia National Laboratory and C. T. Sullivan, Sandia National Laboratory
18.6	N-Polar GaN-Based Highly Scaled Self-Aligned MIS-HEMTs with State-of-the-Art fT x LG Product of 16.8 GHz-um for Mixed Signal Applications	Page 341	Abstract
	Nidhi, University of California, Santa Barbara, Sansaptak Dasgupta, University of California, Santa Barbara, David F. Brown, University of California, Santa Barbara, Stacia Keller, University of California, Santa Barbara, James S. Speck, University of California, Santa Barbara and Umesh K. Mishra, University of California, Santa Barbara
18.7	Selected Technological Improvements of SiC Power Devices in Order to Achieve High Performance Combined with Outstanding Ruggedness	Page 345	Abstract
	Peter Friedrichs, SiCED Electronics Development
18.8	Debris Reduction in GaAs Wafer Dicing Process	Page 349	Abstract
	Kuan-Hsuan Ho, WIN Semiconductor, Shih-Ming Lin, WIN Semiconductor, Huang-Wen Wang, WIN Semiconductor, Kevin Huang, WIN Semiconductor, Ping-Wei Chen, WIN Semiconductor and Chang-Hwang Hua, WIN Semiconductor
18.9	Numerical Analysis of the Effect of Grain Size and Defects on the Performance of CIGS Solar Cells	Page 353	Abstract
	G. Sozzi, University of Parma, F. Troni, University of Parma and R. Menozzi, University of Parma
18.1	Waste Reduction in Lapping Sapphire and Other Compound Semiconductor Materials	Page 357	Abstract
	Elina Kashman, Engis Corp and Mark Irvin, Engis Corp