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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2012 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form
or contact Margaret Doyle at mdoyle@gaasmantech.org

SESSION 1: Plenary I - INDUSTRY VIEW FROM THE TOP: CEO REVIEW Chair: Karen Renaldo, Northrop Grumman (ES)
1.1	Semiconductor Innovation: Enabling Mobile Connectivity David J. Aldrich, President and Chief Executive Officer, Skyworks Solutions, Inc.	Abstract
1.2	Challenges and Opportunities in the III-V Industry: A Quarter Century View Dr. John C.C. Fan, Kopin Corporation	Abstract
1.3	Current Developments in Epi Foundry Services for Advanced Wireless Applications Drew Nelson, IQE plc	Abstract
SESSION 2: PLENARY II – CS INDUSTRY ANALYSIS Chair: Steve Mahon, Cascade Microtech, Inc.
2.1	Europe’s Compound Semiconductor Industry Richard Stevenson, Consultant Editor, Compound Semiconductor magazine	Abstract
2.2	Present Situation and Trend of Compound Semiconductor Industry in Japan Akihiro Tsumura, Sangyo Times, Inc.	Abstract
2.3	GaAs Industry Overview and Forecast: 2010 – 2015 Eric Higham, Strategy Analytics Inc., and Asif Anwar, Strategy Analytics Ltd.	Abstract
SESSION 3: TECHNOLOGY Chair: Glen “David” Via, Air Force Research Laboratory
3.1.	The DARPA Diverse Accessible Heterogeneous Integration (DAHI) Program: Towards a Next-Generation Technology Platform for High-Performance Microsystems 1)Sanjay Raman,Rodgers, Defense Advanced Research Projects Agency 2)Carl L. Dohrman2, Tsu-Hsi Chang, Booz Allen Hamilton Inc.,	Abstract
3.2	GaN Technology for Radars Colin S. Whelan, Nicholas J. Kolias, Steven Brierley, Chris MacDonald, Steven Bernstein, Raytheon Company	Abstract
3.3	Status and Perspective of GaN-based Technology in Japan M. Kuzuhara and H. Tokuda, Graduate School of Engineering, University of Fukui	Abstract
SESSION 4: QUALITY AND YIELD Chair: Thorsten Saeger, TriQuint Semiconductor
4.1	Predicting, Validating, and Improving Yield of Multi-Chip RF Modules During Product Development James M. Eastham, TriQuint Semiconductor	Abstract
4.2	A Call to Higher Quality in GaAs Jose Suarez, Jason Fender, Freescale, RF Division	Abstract
4.3	Use of Knowledge Discovery fromWafer Fab Data for Yield Improvement Patrick J Carroll, RF Micro Devices, Inc.	Abstract
4.4	A Robust, Non-Parametric Method to Identify Outliers and Improve Final Yield and Quality Neill Patterson, TriQuint Semiconductor	Abstract
SESSION 5A: OPERATIONS Chair: Chuck Duncan, RFMD
5a.1	The Best MES Selection Process & Benchmark Survey For a Semiconductor Fab Case Study Danny Rosner, Ariel Meyuhas, MAX I.E.G. LLC	Abstract
5a.2	The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach? Hermann Schenk, Freiberger Compound Materials, Steve Aden, Avago Technologies, Hani Badawi, AXT, Inc., Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic Semiconductors GmbH, Rainer Krause, Soitec, Birgit Müller, Freiberger Compound Materials, Thomas Pearsall, EPIC Association, John Sharp, TriQuint Semiconductor, Inc.	Abstract
5a.3	Green Gallium Arsenide (GaAs) Substrate Manufacturing Stefan Eichler, Freiberger Compound Materials GmbH	Abstract
5a.4	Bridging the Social Gap Working Together for Continued Prosperity and Growth Ryan Snodgrass, Jinhong Yang, TriQuint Semiconductor	Abstract
SESSION 5b: GaN RELIABILITY Chairs: Shawn Burnham, HRL Laboratories, LLC and Glen “David” Via, Air Force Research Laboratory
5b.1	Assessing the Reliability Risk of a Maverick Manufacturing Anomaly William J. Roesch and Dave Littleton TriQuint Semiconductor, Inc.	Abstract
5b.2	Preliminary Reliability Data from Accelerated RF Life Tests on European GaN HEMTs A. R. Barnes, F. Vitobello, ESA/ESTEC Noordwijk	Abstract
5b.3	Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis 1) M. Meneghini , 1) A. Stocco, 1) M. Bertin, 1) C. de Santi, 1) F. Rampazzo, 2) D. Marcon, 1) G. Meneghesso, 1) E. Zanoni 1) University of Padova 2) IMEC	Abstract
5b.4	Empirical and Physical Modeling of Self-Heating in Power AlGaN/GaN HEMTs M. Bernardoni, N. Delmonte, R. Menozzi Department of Information Engineering, University of Parma	Abstract
5b.5	A Gold-free Fully Copper Metalized AlGaN/GaN Power HEMTs on Si substrate Chao-Wei Lin(1, Hsien-Chin Chiu(1, Jeffrey S. Fu(1, Geng-Yen Lee(2, and Jen-Inn Chyi(2 (1 Chang Gung University (2 National Central University	Abstract
SESSION 6a: MANUFACTURING Chair: Arnold Chen, Aurrion
6a.1	What Happened, What Was Done and What Was Learned in CS Industry through Catastrophic Disasters in Japan Yohei Otoki Hitachi Cable, Ltd.	Abstract
6a.2	GaN on Si HEMT Process Transfer and Qualification John Bell(1, Jeannette James(1, John Kearney(1, Brad Krongard(1, Tom Lepkowski(1, Pradeep Rajagopal(11, Brook Raymond(1*, James Shen(1, KeithWill(1, Chung-hsu Chen(2, Minkar Chen(2, Daniel Hou(2, Chuanxin Lian(2, Libo Song(2, William Sutton(2, Alex Vigo(2, Chao Wang(2, DavidWang(2, Shiguang Wang(2 (1 Nitronex Corporation (2 Global Communication Semiconductors	Abstract
6a.3	Repair and Maintenance in High-Volume MBE Production W.T. Black RFMD	Abstract
6a.4	Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells C. Youtsey, J. Adams, R. Chan, V. Elarde, G. Hillier, M. Osowski, D. McCallum, H. Miyamoto, N. Pan, C. Stender, R. Tatavarti, F. Tuminello, A. Wibowo, MicroLink Devices, Inc.	Abstract
SESSION 6b: HBTs Chairs: Charles Fields, Agilent Technologies Mike Sun, Skyworks Solutions, Inc.
6b.1	A Ultra High Ruggedness Performance of InGaP/GaAs HBTShu-Hsiao Tsai, Rei-Bin Chiou, Tung-Yao Chou, Cheng-Kuo Lin, and Dennis Williams, WiN Semiconductors Corp.	Abstract
6b.2	Novel Passivation Ledge Monitor in an InGaP HBT Process Cristian Cismaru and Peter J. Zampardi Skyworks Solutions, Inc.	Abstract
6b.3	Non-Linearity Characterization of Submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs Huiming Xu, Eric Iverson, K.Y. (Donald) Cheng, Mark Stuenkel and Milton Feng University of Illinois at Urbana-Champaign	Abstract
6b.4	Novel Bi-HEMT Technology for LTE Handset Application Bing-Shan Hong, Shu-Hsiao Tsai, Cheng-Kuo Lin, Shinichiro Takatani, and Dennis William WIN Semiconductors Corp.	Abstract
SESSION 7a: NOVEL DEVICES Chairs: Tom Low, Agilent Technologies and Hidetoshi Kawasaki, Sony
7a.1	III-V MOSFETs for Sub-15 nm Technology Generation CMOS : Some Observations, Issues and Solutions Iain Thayne(1, Xu Lin(1, Wout Jansen(1, Ian Povey(2, Eamon O’Connor(2, Martin Pemblen(2, Paul Hurley(2, Jaesoo Ahn(3, Paul McIntyre(3 1) School of Engineering, University of Glasgow, Scotland, UK. 2) Tyndall National Institute, Cork. Ireland. 3) Stanford University, USA.	Abstract
7a.2	Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance Qiang Li, Xiuju Zhou, Chak Wah Tang and Kei May Lau, Hong Kong University of Science and Technology	Abstract
7a.3	Demonstration of Low Subthreshold Swing a-InGaZnO Thin Film Transistors Liang-Yu Su, Hsin-Ying Lin, Huang-Kai Lin, and JianJang Huang Graduate Institute of Photonics and Optoelectronics and National Taiwan University	Abstract
7a.4	Germanium and compound semiconductor manufacturing for advanced CMOS A. Dimoulas, MBE Laboratory, NCSR DEMOKRITOS	Abstract
SESSION 7b: PACKAGING Chair: Shiban Tiku, Skyworks Solutions, Inc.
7b.1	Electrical, Thermal, Reliability and Cost Considerations for Millimeter-Wave Surface Mount Packages Peter W Evans and Anthony P Fattorini M/A-COM Technology Solutions	Abstract
7b.2	Methods for Removing TiOx Residue from Au Bond Pad Lena Luu, Minkar Chen, Frank Monzon Global Communications Semiconductors, Inc.	Abstract
7b.3	Manufacturing of Cu-pillar Bump for III-V MMIC Thermal Management T. Hsiao; G. Chen; S. Chou; H. Liao, WIN Semiconductors Corp.	Abstract
SESSION 8a: PROCESSING – GATES Chair: Russ Westerman, Plasma-Therm, LLC
8a.1	40 nm T-Gate Process Development using ZEP Reflow D. J. Meyer*, B. P. Downey, R. Bass, D. S. Katzer, and S. C. Binari Naval Research Laboratory	Abstract
8a.2	Set up and Characterization of an Optical Wide Stepper Process For DR15 Technology as a replacement for E-Beam Lithography Amy Zhou, Jerry Beene, Marcus King, Ming-Yih Kao, Hua-Tang Chen, Chris Puckett, Aaron Ferreira and Jan Campbell TriQuint Semiconductor	Abstract
8a.3	Dry Wide Recess Process Characterization for PHEMT Kevin Shu and Mark R. Tesauro TriQuint Semiconductor	Abstract
8a.4	To Improve E-beam T-gate Yield by Pre-Cleaning Process Hao-Yu Ting, John Huang, Hsi-Tsung Lin, Eric Kuo, Se-Jung Lee, David Wu, William Lai, Kerry Chang ,Wen-Kai Wang WIN Semiconductors Corp.	Abstract
8a.5	150 nm T-shape Gate Process Capacity Improvement Se-Jung Lee, Chih-Chuan Chang, I-Te Cho and Yu-Chi Wang WIN Semiconductors Corp.	Abstract
8a.6	Removal of Surface-Related Current Slump in Field-Plate GaAs FETs F. Hafiz, M. Kumeno, T. Tanaka, and K. Horio Shibaura Institute of Technology	Abstract
SESSION 8b: GaN/SiC PROCESSING Chairs: Michelle Bourke, Oxford Instruments Plasma Technology, Scott Sheppard, Cree, Inc.
8b.1	High Mobility(210 cm2/Vs), High Capacitance (7.2 uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD	Abstract
8b.1	P. von Hauff(1, K. Bothe(1, A. Afshar(2, A. Foroughi-Abari2, D. Barlage(1, K. Cadien(2, (1 Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, Canada (2 Department of Chemical and Materials Engineering, University of Alberta	Abstract
8b.2	Threshold Voltage Control of Recessed-Gate III-N HFETs Using an Electrode-less Wet Etching Technique	Abstract
8b.2	Yi-Che Lee, Cheng-Yin Wang, Tsung-Ting Kao, and Shyh-Chiang Shen Georgia Institute of Technology	Abstract
8b.3	Low-Loss Metal-on-BCB Technology for Next-Generation GaN MMICs	Abstract
8b.3	E.J. Stewart, R.G. Freitag, J.S. Mason, M.J. Walker, H.G. Henry, and K.M. Renaldo Northrop Grumman Electronic Systems	Abstract
8b.4	Evaluation of through wafer via holes in SiC substrates for GaN HEMT technology	Abstract
8b.4	H.Stieglauer(1, J.Noesser(1, G.Bödege(1, K.Drüeke(2, H.Blanck(1, D.Behammer(1 1 United Monolithic Semiconductors 2 Cassidian/EADS	Abstract
8b.5	Backside Via Process of GaN Device Fabrication Ju-Ai Ruan, Craig Hall, Celicia Della-Morrow, Tom Nagle, Yinbao Yang, TriQuint Semiconductor	Abstract
8b.6	Chlorine-Based ICP Etching for Improving the Luminance Efficiency in Nitride LEDs H. Ogiya, T. Nishimiya, M. Hiramoto, S. Motoyama and O. Tsuji Research and Development Department, Samco Inc.	Abstract
SESSION 9a: POWER DEVICES Chairs: Ruediger Schreiner, Aixtron SE and Robert Sadler, HexaTech, Inc.
9a.1	The Status of GaN based Power Device Development at International Rectifier Michael A. Briere, ACOO Enterprises LLC	Abstract
9a.2	AlGaN/GaN HEMTs Employing NiOX-based Schottky contact and Floating Metal Ring for High Breakdown Voltage Young-Shil Kim(1, Min-Woo Ha(2, OGyun Seok(1, Woo-Jin Ann(1, and Min-Koo Han(1 1) Seoul National University, Seoul, Korea 2) Korea Electronics Technology Institute	Abstract
9a.3	Au-free, High-Breakdown AlGaN/GaN MISHEMTs with Low Leakage, High Yield and Robust TDDB Characteristics	Abstract
9a.3	Silvia Lenci(1, Xuanwu Kang(1, Dirk Wellekens(1, Marleen Van Hove(1, Sanae Boulay(2, Steve Stoffels(1, Karen Geens(1, Mohammed Zahid(1 and Stefaan Decoutere(1 1) IMEC, Belgium 2) IMEC-NL, The Netherlands	Abstract
9a.4	2 kV Breakdown Voltage GaN–on-Si DHFETs with Sub-micron Thin AlGaN Buffer Puneet Srivastava(1, 2, Kai Cheng(1, Jo Das(1, Marleen Van Hove(1, Maarten Leys(1, Denis Marcon(1, Domenica Visalli(1,2, Karen Geens(1, Stefaan Decoutere(1, Robert P. Mertens(1, 2 and Gustaaf Borghs(1, 2 1) imec, Belgium 2) Katholieke Universiteit Leuven, Belgium	Abstract
9a.5	AlGaN/GaN High Electron Mobility Transistors Employing Multiple Al2O3/Ga2O3 stacks Ogyun Seok 1), Woojin Ahn 1), Young-Shil Kim 1), Min-Woo Ha 2), and Min-Koo Han 1) 1) Seoul National University 2)Korea Electronics Technology Institute	Abstract
SESSION 9b: GaAs PROCESSING Chairs: Kamal Alavi, Raytheon Chang Hwang Hua, WIN Semiconductor
9b.1	ADHESION CHARACTERIZATION OF PHOTO-DEFINABLE EPOXIES ON HIGH ASPECT RATIO STRUCTURES FOR HIGH PERFORMANCE APPLICATIONS Martin Ivie1, Jan Campbell, Qizhi He TriQuint Semiconductor	Abstract
9b.2	DEVELOPMENT OF A DOUBLE LAYER SPRAY/SPIN COAT PROCESS FOR IMPROVING COAT UNIFORMITY OF AN 80 MICRON COAT PROCESS Martin Ivie(1,3, Jan Campbell(1, Qizhi He(1, Howie Yang(1, Kara Palmer(2, Mike Sexton(2, Chad Brubaker(2 1) TriQuint Semiconductor 2) EV Group	Abstract
9b.3	Improving Front Side Process Uniformity by Back-Side Metallization Kezia Cheng Skyworks Solutions, Inc.	Abstract
9b.4	High Throughput Stress-Controlled Silicon Nitride Deposition For Compound Semiconductor Device Manufacturing Kenneth. D. Mackenzie, Rohit Khanna, and John Jacob Plasma-Therm LLC	Abstract
9b.5	New insights into formation of Ni-based alloyed Ohmic contacts to GaAs G. Rajaram, T. S. Abhilash and Ch. Ravi Kumar University of Hyderabad	Abstract
SESSION 10a: POWER DEVICES II Chairs: Sharon Woodruff, Northrop Grumman George Henry, Northrop Grumman
10a.1	11.72 cm2 SiC Wafer-scale Interconnected 64 kA PiN Diode M. Snook(1,a, H. Hearne(1, T. McNutt(2, N. El-Hinnawy(1, V. Veliadis(1, B. Nechay(1, S. Woodruff(1, R. S. Howell(1, D. Giorgi(3, J. White (4, j, S. Davis (4 1) Northrop Grumman Electronic Systems, 2) Now with APEI Inc., 3) Omnipulse Inc., 4) US Army TARDEC	Abstract
10a.2	Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b a) Electronics and Optoelectronics Research Laboratories b) Diodes Incorporated	Abstract
10a.3	Challenges in the Automotive Application of GaN Power Switching Devices Ming Su(1, Chingchi Chen(1, Lihua Chen(1, Michele Esposto(2 and Siddarth Rajan(2 1 Ford Motor Company 2 The Ohio State University	Abstract
10a.4	High Breakdown Voltage(1590 V) AlGaN/GaN-on-Si HFETs with Optimized Dual Field Plates Jae-Gil Lee(1, Bong-Ryeol Park(1, Ho-Jung Lee(1, Minseong Lee(2, Hojung An(2, Kwang-Seok Seo(2 and Ho-Young Cha(1 1) Hongik Unviersity 2) Seoul National University	Abstract
10a.5	Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology Chwan-Ying Lee, Young-Shying Chen , Lurng-Shehng Lee, Chien-Chung Hung, Cheng-Tyng Yen, Suh-Fang Lin, Rong Xuan, Wei-Hung Kuo, Tzu-Kun Ku, and Ming-Jinn Tsai Electronics and OptoElectronics Research Laboratories (EOL), ITR	Abstract
SESSION 10b: EPI CHARACTERIZATION AND OPTIMIZATION Chairs: Andy Souzis, II-VI, Inc. Barbara Landini, Sumika Electronic Materials
10b.1	Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance M.Tyhach(1, S. Bernstein1, P. Saledas(1, F. Ejeckam(2, D. Babic(2, F. Faili(2, D. Francis(2 1) Raytheon Co. 2) Group4 Labs	Abstract
10b.2	Light response in buffer leakages and its application for epi quality development in AlGaN/GaN HEMT structures Takeshi Tanaka, Harry Kamogawa, Yohei Otoki and Masae Sahara Hitachi Cable, Ltd.	Abstract
10b.3	Reduction in Production pHEMT Process Variation Due to MBE Rotational Effects W. Andrew Shelton and Clayton L. Workman RF Micro Devices, Inc.	Abstract
10b.4	Manufacturing Efficiency Improvement through MBE Recipe Optimization Guoliang Zhou and Mark Borek Skyworks Solutions, Inc.	Abstract
10b.5	An In-Situ Reflectance Implementation for High Volume Electronic Device Epitaxial Wafer Production M. Youngers, P. Rice, G. Yeboah, E. Rehder, O. Laboutin, K. S. Stevens, and W. Johnson Kopin Corporation	Abstract
SESSION 11a: GaN DEVICES Chairs: Shyh-Chiang Shen, Georgia Tech and Yohei Otoki, Hitachi Cable, Ltd.
11a.1	Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima and Toshihide Kikkawa, Fujitsu Laboratories Ltd.	Abstract
11a.2	Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure Fu-Chuan Chu(a, Ying-Jie Tsai(a, Sheng-Yu Liao(a, Chou-Shuang Huang(a, Ray-Ming Lin(a, Sheng-Fu Yu(b, Shuh-Sen Ren(c a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology	Abstract
11a.3	ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs Sen Huang, Qimeng Jiang, Shu Yang, Chunhua Zhou, and Kevin J. Chen, Hong Kong University of Science and Technology	Abstract
11a.4	Impact of step edges on trapping behavior in N-polar GaN HEMTs Nicole Killat(1, Michael J. Uren(1, Seshadri Kolluri(2, Stacia Keller(2, Umesh K. Mishra(2, and Martin Kuball(1 1) University of Bristol, 2) University of Santa Barbara California	Abstract
11a.5	Profiling the Temperature Distribution in AlGaN/GaN HEMTs with Nanocrystalline Diamond Heat Spreading Layers T.J. Anderson(1, M.J. Tadjer(2, K.D. Hobart(1, T.I. Feygelson(3, J.D. Caldwell(1, M.A. Mastro(1, J.K. Hite(1, C.R. Eddy, Jr(1, F.J. Kub(1, B.B. Pate(1 1. Naval Research Laboratory 2. Universidas Politécnica de Madrid, Spain	Abstract
SESSION 11b: BACKSIDE PROCESSING / YIELD IMPROVEMENT Chair: Travis Abshere, TriQuint Semiconductor
11b.1	Successful GaAs Backend Process Improvement Tom Hand, Scott Farmosa, Jennifer Welborn, Daniel Nercessian Skyworks Solutions	Abstract
11b.2	Method for Detecting GaAs Die Fractures in Device Manufacturing Through the Use of a Designed Test Vehicle Jason Fender, Jose Suarez Freescale	Abstract
11b.3	The Effects of Increasing the Aspect Ratio of GaAs Backside Vias Holly Rubin, Dwarakanath Geerpuram, Russ Westerman Plasma-Therm LLC	Abstract
11b.4	Rework Reduction and Optimization of 150MM Wafer Mount Process Pavan Bhatia, Jan Campbell and Martin Ivie TriQuint Semiconductor	Abstract
11b.5	Yield Improvement for Thin 50 um GaAs Product Line Rui-Ching Wei, Huang-Wen Wang, Chen-Che Chin, Summer Chiang, Jimmy Her, Ping-Wei Chen, Kevin Huang, and Chang-Hwang Hua WIN Semiconductors Corp.	Abstract
SESSION 12: INTERACTIVE FORUM Chairs: Celica Della-Morrow, TriQuint Semiconductor,, Sharon Woodruff, Northrop Grumman, Hidetoshi Kawasaki, Sony
12.1	Wafer Bonding Technology for HB-LED Manufacturing Thomas Uhrmann(1, Viorel Dragoi(1, Eric F. Pabo(2, Thorsten Matthias(1, Paul Lindner(1 1) EV Group, Austria 2) EV Group Inc., Tempe, AZ
12.2	Effect of Wafer Height and Bow on Eddy Current Sheet Resistance Measurements Mark Benjamin Lehighton Electronics Inc,
12.3	Development of AlGaN/GaN HEMTs on Different Substrates Ming Pan, Xiang Gao, Daniel Gorka, Mark Oliver, and Shiping Guo IQE RF, LLC.
12.4	PVD Magnetron Sputtering Parameters and their Effect on the Composition of AuSn Solder Heiner Lichtenberger, Alan Duckham, Steve Golovato, and George Seryogin * Materion Microelectronics and Services ** NEXX Systems
12.5	Investigation of Efficiency Droop for InGaN-based LEDs with Carrier Localization State and Polarization Effect Sheng-Fu Yu, Shoou-Jinn Chang and Sheng-Po Chang National Cheng Kung University
12.6	ADVANCEMENTS IN LAPPING AND POLISHING WITH DIAMOND SLURRIES
12.6	Kan-Yin Ng and Timothy Dumm Diamond Innovations
12.7	Analytical and Simulative Viewpoint of Graded Barrier AlGaN/GaN HEMT for High Input Impedance, Breakdown Voltage and Channel mobility Palash Das, Pallab Banerji, Dhrubes Biswas Indian Institute of Technology Kharagpur
12.8	A New Single Wafer Cleaning Technology for Compound Semiconductor Manufacturing Richard Peters, Spencer Hochstetler, Keith Cox, Palmer Holbrook Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
12.9	Growth of InGaAs/ (Al)GaAs Layers for Laser Manufacturing using 4 inch GaAs Substrate S.Habermann(1, J.Hofeldt(1, R.Schreiner(1, D.Schmitz(1, M.Heuken(1,2 (1 AIXTRON SE (2 RWTH Aachen University

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The International Conference on Compound Semiconductor Manufacturing Technology "Sharing Ideas Throughout the Industry" 2012 On-line Digest Table of Contents Order everything you need with our convenient on-line order form or contact Margaret Doyle at mdoyle@gaasmantech.org

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GaAs ManTech On-Line Digest Search

search engine by freefind advanced

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2012 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form
or contact Margaret Doyle at mdoyle@gaasmantech.org