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Papers presented at 2015 Conference
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GaAs ManTech On-Line Digest Search
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SESSION 1: PLENARY |
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1.1 |
Invited Presentation |
Abstract |
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1.2 |
Invited Presentation |
Abstract |
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1.3 |
Invited Presentation |
Abstract |
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SESSION 2: COMPOUND SEMICONDUCTOR TRENDS |
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2.1 |
Invited Presentation |
Abstract |
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2.2 |
Invited Presentation Robert Darveaux, Tony LoBianco, Lori DeOrio, Andrew Kay, Bob Williams |
Abstract |
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2.3 |
Market and Technology Trends in WBG Materials for Power Electronics Applications Dr. Hong LIN |
Abstract |
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2.4 |
6-inch VCSEL Wafer Foundry Economics David Cheskis ANADIGICS, INC. |
Abstract |
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SESSION 3: GaN MANUFACTURING |
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3.1 | 0.15μm GaN MMIC Manufacturing Technology for 2-50 GHz Power Applications |
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3.2 | RF Performance Improvement of 0.25μm GaN HEMT Foundry Technology |
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3.3 | Effects of Underlying Metals on Textures of Plated Au films on GaN |
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3.4 | Enhanced Visual Performance in GaN HEMT Technology |
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3.5 | High Power Plastic Packaging with GaN |
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SESSION 4: MATERIALS |
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4.1 | A Mechanism and a Solution to non-Uniformity of pHEMT Wafers Grown by MBE Process |
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4.2 | Fast and Highly Accurate in-situ Calibration of AlGaAs Ternary Composition for MOVPE-based Growth of Edge-Emitting Diode Lasers |
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4.3 | Orderly Array of in-plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-free GaAs Thin Films |
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4.4 | Fabrication of III-V virtual Substrate on 200 mm Silicon for III-V and Si Devices Integration |
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4.5 | Improvements in Processing - Carrier and Material Impacts |
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SESSION 5: METALLIZATION |
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5.1 | Dynamics of Surface Treatments and Pre-Cleans for High Volume Wafer Manufacturing |
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5.2 | A Simulation of Wafer Temperature-Time Profile in PVD Process Using an Exponential Model and Its Applications |
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5.3 | Stress Reduction in Metallization using in-situ Stress Measurement and Plasma Assisted Evaporation Evatec AG. |
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5.4 | Wafer-to-Wafer Metal Sputter Deposition Process Control by Automatic Deposition Rate Adjustment 1Qorvo, Inc., 2SPTS Technologies Ltd. |
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SESSION 6: GaN MATERIALS |
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6.1 | The Growth of Low Wafer Bow AlGaN/GaN Structure on 200mm Si(111) |
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6.2 | GaN MOCVD on Si via Single Crystal Rare-Earth Oxide Buffer Layer |
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6.3 | Characterization of Strained AlGaN/GaN HEMTs on CMP-thinned Si Substrates 1American Society for Engineering Education, 2United States Naval Research Laboratory, 3National Research Council |
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6.4 | Effect of Capping Structure on High Temperature Annealing of GaN |
Abstract | |
6.5 | Withdrawn |
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SESSION 7: GaN DRY ETCH |
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7.1 | Optimizing the SiC Plasma Etching Process for Manufacturing Power Devices |
Abstract | |
7.2 | Electrical Properties of GaN Etched by Low Bias Power Process Fujitsu Laboratories Ltd. |
Abstract | |
7.3 | SiC / GaN Via Process – in Search for Perfection Qorvo, Inc. |
Abstract | |
7.4 | Qualification of Backside Via Etch Process in GaN-on-SiC HEMT Devices |
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7.5 | Analysis and Optimization of a Through Substrate Via Etch Process for Silicon Carbide Substrates 1Ferdinand-Braun-Institut, 2LayTec AG. |
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SESSION 8: THERMAL MANAGEMENT FOR HIGH POWER DEVICES |
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8.1 | Student Presentation |
Abstract | |
8.2 | Rapid Characterization of GaN-on-Diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance 1University of Bristol, 2Element Six Technologies |
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8.3 | Comparison of Thermal Properties of Packaged AlGaN/GaN HFETs on Si and n-SiC Substrates |
Abstract | |
8.4 | Student Presentation |
Abstract | |
8.5 | Simulation of the Impact of Through-Substrate Vias on the Thermal Resistance of Compound Semiconductor Devices |
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SESSION 9: GaN ANNEALING/PASSIVATION |
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9.1 | Atomic Layer Deposition for GaN Power Semiconductors |
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9.2 | Comparative Study of AlGaN/GaN HEMTs with LPCVD- and PECVD-SiNx Passivation Chinese Academy of Sciences |
Abstract | |
9.3 | Student Presentation |
Abstract | |
9.4 | Student Presentation |
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9.5 | Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs 1University of Fukui, 2Nara Institute of Science and Technology |
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SESSION 10: TEST/YIELD |
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10.1 | Improving Return on Invested Capital (ROIC) in PHEMT Technology Qorvo, Inc. |
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10.2 | Optimization Methodology of Clean Pads Selection for Lifetime and Test Yield on RF bump Wafer Test with Membrane Probe Card WIN Semiconductor |
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10.3 | Threshold Voltage Extraction Method for 2D Devices with Power-Law µ(nS) Dependence Itron France |
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10.4 | Process Optimization to Improve Known-Good-Die (KGD) Test Accuracy and Wafer Final Yield Qorvo, Inc |
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10.5 | Using GaAs Diesort Methods for Efficient High Volume Capacitor Testing |
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SESSION 11: MANUFACTURING IMPROVMENTS |
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11.1 | Seam Defects Caused by Clear Field Mask Chrome Dimensions |
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11.2 | Effect of Tape Liftoff Tool Settings and Plasma Conditions on Metal Peeling from Polyimide Surfaces Skyworks Solution Inc. |
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11.3 | Effective in-line Monitoring Structures for Critical Dimension Measurement in Photolithography Qorvo, Inc. |
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11.4 | InAlN/GaN HEMTs With Over 100-GHz Ft Using an Improved Y-Gate Process by an i-line Stepper |
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11.5 | Rapid Production Readiness Through Process Margin Study: How to Isolate the Epi and Fab Parameters That Really Matter Qorvo, Inc. |
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SESSION 12: GaAs PROCESSING |
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12.1 | High Aspect Ratio Individual Source Through Wafer Vias for High Frequency GaAs pHEMT Processes 1United Monolithic Semiconductors Germany, 2United Monolithic Semiconductors France |
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12.2 | Student Presentation |
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12.3 | Effect of Pt Thickness on the Gate Sinking in a pHEMT Device |
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12.4 | An Integration of On-Chip High-Q Inductors by Cu Redistribution Layer (RDL) with Bumping for InGaP/GaAs HBT MMIC |
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12.5 | Highly Linear Ka-Band 0.15µm GaAs Power pHEMT Process for Use in Low-Cost Molded QFN Plastic Package |
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SESSION 13: GAN RF DEVICES |
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13.1 | Leakage Current and Two-Tone-Linearity Investigations on 0.5µm AlGaN/GaN HEMTs |
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13.2 | AlInN/GaN HEMTs on SiC and on Silicon with Regrown Ohmic Contacts by Selective Ammonia MBE |
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13.3 | Correlation between Luminescence and Current Collapse in AlGaN/GaN HEMTs University of Fukui. |
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13.4 | Current Dispersion in Short Channel Al0.32Ga0.68N/GaN HEMTs |
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13.5 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
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SESSION 14: III-V DEVICES |
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14.1 | Invited Presentation |
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14.2 | ESD Protection Device for HEMT MMICs |
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14.3 | pHEMT Device Characterization for Current Transient Time Constant and Link to Error Vector Magnitude |
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14.4 | Student Presentation |
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14.5 | Student Presentation |
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SESSION 15: GaN POWER ELECTRONICS |
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15.1 | Invited Presentation |
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15.2 | Above 2000 V Breakdown Voltage on 2 µm-thick Buffer Ultrathin Barrier AlN/GaN-on-Silicon Transistors |
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15.3 | EC-2.0eV Trap-Related Dynamic RON in GaN/Si MISHEMTs |
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15.4 | Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors Massachusetts Institute of Technology |
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15.5 | RDSON Stability of GaN High Voltage Power Devices Post Long-Term Stress: A New Method to Screen Unstable RDSON Performers |
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SESSION 16: GaN RELIABILITY |
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16.1 | Invited Presentation Boeing Network and Space Systems |
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16.2 | Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons |
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16.3 | Drain - Bulk Leakage Current Mechanisms and Model for Power GaN HEMT on Si Substrate 1University of South Carolina, 2Texas Instruments, Dallas, TX |
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16.4 | Hot-Phonon Effect on the Reliability of GaN-Based Heterostructure Field-Effect Transistors 1ASELSAN, Inc., 2Virginia Commonwealth University |
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SESSION 17: POSTER |
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17.1 | Student Presentation |
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17.2 | Student Presentation |
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17.3 | Student Presentation National Taiwan University |
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17.4 | Micromachined p-GaN Gate Normally-off PowerHEMT with an Optimized Air-Bridge Matrix Layout Design |
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17.5 | Optical Frequency Response of GaN-based Light-emitting Diodes with Embedded Photonic Crystals National Taiwan University |
Abstract | |
17.6 | Si-Ge-Sn based Compound Semiconductors for Photonic Applications |
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17.7 | Withdrawn |
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17.8 | Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs Electronics and Telecommunications Research Institute |
Abstract | |
17.9 | Student Presentation |
Abstract |