Papers presented at 2015 Conference

GaAs ManTech On-Line Digest Search


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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2015 On-line Digest Table of Contents

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SESSION 1: PLENARY Chairs: David Via, AFRL
1.1	Invited Presentation Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-Efficiency Systems Timothy D. Heidel1, David Henshall1, Pawel Gradzki2 1Advanced Research Projects Agency – Energy (ARPA-E) U.S. Department of Energy, 2Booz Allen Hamilton	Abstract
1.2	Invited Presentation Compound Semiconductor Technology for Modern RF Modules: Status and Future Directions Daniel S. Green1, Carl L. Dohrman2, Avinash S. Kane2, Tsu-Hsi Chang3 1DARPA, 2Booz Allen Hamilton, 3HetInTec Corp	Abstract
1.3	Invited Presentation Importance of High Frequency Compound Semiconductor Devices for Wireless Power Transfer using Direct-Current-Resonance System Tatsuya Hosotani Murata Manufacturing Co., Ltd	Abstract
SESSION 2: COMPOUND SEMICONDUCTOR TRENDS Chairs: Michelle Bourke, Kilbrydon Consulting Barb Landini, Sumika Electronic Materials
2.1	Invited Presentation Mobile RF Front End Integration James P. Young Skyworks Solutions, Inc.	Abstract
2.2	Invited Presentation Packaging Trends in the Wireless Industry Robert Darveaux, Tony LoBianco, Lori DeOrio, Andrew Kay, Bob Williams Skyworks Solutions, Inc.	Abstract
2.3	Market and Technology Trends in WBG Materials for Power Electronics Applications Dr. Hong LIN Compound Semiconductor Market and Technology Analyst, Yole Développement	Abstract
2.4	6-inch VCSEL Wafer Foundry Economics David Cheskis ANADIGICS, INC.	Abstract
SESSION 3: GaN MANUFACTURING Chairs: Dane Henry, Qorvo, Inc. Toshihide Kikkawa, Transphorm
3.1	0.15μm GaN MMIC Manufacturing Technology for 2-50 GHz Power Applications Sabyasachi Nayak, Ming-Yih Kao, Hua-Tang Chen, Trish Smith, Peter Goeller, Weixiang Gao, Jose Jimenez, Shuoqi Chen, Charles Campbell, Gergana Drandova, and Robert Kraft Qorvo, Inc.	Abstract
3.2	RF Performance Improvement of 0.25μm GaN HEMT Foundry Technology Jhih-Han Du, Che-Kai Lin, Sheng-Wen Peng, Fu-Chuan Chu, Kai-Sin Cho, Yue-Ting Lin, Wei-Chou Wang, Walter Wohlmuth WIN Semiconductors Corp	Abstract
3.3	Effects of Underlying Metals on Textures of Plated Au films on GaN Kazuhiro Maeda, Koichiro Nishizawa,Daisuke Suzuki, Toshihiko Shiga and Hitoshi Watanabe Mitsubishi Electric Corporation	Abstract
3.4	Enhanced Visual Performance in GaN HEMT Technology Kai-Sin Cho, Yue-Ting Lin, Wei-Chou Wang, Jhih-Han Du, I-Te Cho, and Walter Wohlmuth WIN Semiconductors Corp.	Abstract
3.5	High Power Plastic Packaging with GaN Quinn D. Martin MACOM Technology Solutions	Abstract
SESSION 4: MATERIALS Chairs: Guoliang Zhou, Skyworks Kevin Stevens, IQE
4.1	A Mechanism and a Solution to non-Uniformity of pHEMT Wafers Grown by MBE Process Guoliang Zhou, Mark Borek Skyworks Solutions, Inc.	Abstract
4.2	Fast and Highly Accurate in-situ Calibration of AlGaAs Ternary Composition for MOVPE-based Growth of Edge-Emitting Diode Lasers M. Zorn1, O. Schulz3, A.J. Spring Thorpe2, J.-T. Zettler3 1JENOPTIK Diode Lab GmbH, 2NRC of Canada, 3LayTec AG	Abstract
4.3	Orderly Array of in-plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-free GaAs Thin Films Qiang Li, Kar Wei Ng, Kei May Lau Hong Kong University of Science and Technology	Abstract
4.4	Fabrication of III-V virtual Substrate on 200 mm Silicon for III-V and Si Devices Integration David Kohen1, Riko I Made1, Shuyu Bao1,2, Kwang Hong Lee1, Kenneth Eng Kian Lee1, Chuan Seng Tan 2, Soon Fatt Yoon 1,2, Eugene A. Fitzgerald 1,3 1Singapore-MIT Alliance for Research and Technology Center, 2Nanyang Technological University, 3Massachusetts Institute of Technology	Abstract
4.5	Improvements in Processing - Carrier and Material Impacts Molly Hladik1, Aric Shorey2 1Brewer Science, Inc, 2Corning, Inc	Abstract
SESSION 5: METALLIZATION Chairs: Heribert Zull, Osram Opto Semiconductors Shiban Tiku, Skyworks Solutions
5.1	Dynamics of Surface Treatments and Pre-Cleans for High Volume Wafer Manufacturing J. Crites1, W. Snodgrass2, L. Luu3 and Collaborators 1Skyworks Solutions Inc., 2Avago Technologies, 3Global Communication Semiconductors LLC	Abstract
5.2	A Simulation of Wafer Temperature-Time Profile in PVD Process Using an Exponential Model and Its Applications Xiaokang Huang1, Romek Bobkowski1, Duofeng Yue1, Craig Hall1, Charles Dark1, Arthur McGeown2, Chris Jones2, Paulo Lima2, Paul Rich2 1Qorvo, Inc., 2SPTS Technologies Ltd.	Abstract
5.3	Stress Reduction in Metallization using in-situ Stress Measurement and Plasma Assisted Evaporation Silvia Schwyn Thöny, Jürgen Buchholz, Reinhard Benz Evatec AG.	Abstract
5.4	Wafer-to-Wafer Metal Sputter Deposition Process Control by Automatic Deposition Rate Adjustment Chang’e Weng1, Jinhong Yang1, Ron Herring1, Brian Zevenbergen1, Joel Anderson2, Chris Jones2, Liam Cunnane2 1Qorvo, Inc., 2SPTS Technologies Ltd.	Abstract
SESSION 6: GaN MATERIALS Chairs: John Blevins, Air Force Research Laboratory Judy Kronwasser, NOVASiC
6.1	The Growth of Low Wafer Bow AlGaN/GaN Structure on 200mm Si(111) Chieh-Chih Huang1, Frank Ried2, Tomas Palacios3, Soo Jin Chua4, Eugene A Fitzgerald5 1Singapore-MIT Alliance for Research and Technology Center, 2AIXTRON SE, 3Department of Electrical Engineering and Computer Science-MIT, 4National University of Singapore, 5Department of Materials Science and Engineering-MIT.	Abstract
6.2	GaN MOCVD on Si via Single Crystal Rare-Earth Oxide Buffer Layer Rytis Dargis, Erdem Arkun, Radek Roucka, Andrew Clark Translucent Inc.	Abstract
6.3	Characterization of Strained AlGaN/GaN HEMTs on CMP-thinned Si Substrates Marko J. Tadjer1, Travis J. Anderson2, Andrew D. Koehler2, Jordan D. Greenlee3, Karl D. Hobart2, Fritz J. Kub2 1American Society for Engineering Education, 2United States Naval Research Laboratory, 3National Research Council	Abstract
6.4	Effect of Capping Structure on High Temperature Annealing of GaN Jordan D. Greenlee1, Boris N. Feigelson2, Jennifer K. Hite2, Karl D. Hobart2, Fritz J. Kub2, Travis J. Anderson2 1National Research Council, 2Naval Research Laboratory	Abstract
6.5	Withdrawn
SESSION 7: GaN DRY ETCH Chairs: Jansen Uyeda, Northrop Grumman (AS) Russ Westerman, Plasma-Therm, LLC
7.1	Optimizing the SiC Plasma Etching Process for Manufacturing Power Devices Haruna Oda, Peter Wood, HIromichi Ogiya, Seita Miyoshi, Osamu Tsuji SAMCO Inc.	Abstract
7.2	Electrical Properties of GaN Etched by Low Bias Power Process Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Keiji Watanabe Fujitsu Laboratories Ltd.	Abstract
7.3	SiC / GaN Via Process – in Search for Perfection Ju-Ai Ruan, Craig Hall, Harold Isom, Tom Nagle Qorvo, Inc.	Abstract
7.4	Qualification of Backside Via Etch Process in GaN-on-SiC HEMT Devices Frank Fan, Minkar Chen, Daniel Hou, David Wang Global Communication Semiconductors, LLC	Abstract
7.5	Analysis and Optimization of a Through Substrate Via Etch Process for Silicon Carbide Substrates Andreas Thies1, Wilfred John1, Stephan Freyer1, Jaime Beltran2, Olaf Krüger1 1Ferdinand-Braun-Institut, 2LayTec AG.	Abstract
SESSION 8: THERMAL MANAGEMENT FOR HIGH POWER DEVICES Chairs: Tom Low, Keysight Technologies Chang-Hwang Hua, WIN Semiconductors Corp.
8.1	Student Presentation 8.1 Measuring the Thermal Conductivity of the GaN Buffer Layer in AlGaN/GaN HEMTs: Effect of Carbon and Iron Doping M.Power1, J.W. Pomeroy1, Y.Otoki2, T.Tanaka2, J.Wada2, M. Kuzuhara3, W.Jantz4, A.Souzis5, M.Kuball1 1University of Bristol, 2Hitachi Metals, 3University of Fukui, 4SemiMap Scientific Instruments, 5II-VI Wide Bandgap Group	Abstract
8.2	Rapid Characterization of GaN-on-Diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance Huarui Sun1, James W. Pomeroy1, Roland B. Simon1, Daniel Francis2, Firooz Faili2, Daniel J. Twitchen2, Martin Kuball1 1University of Bristol, 2Element Six Technologies	Abstract
8.3	Comparison of Thermal Properties of Packaged AlGaN/GaN HFETs on Si and n-SiC Substrates R. Zhytnytska1, J. Böcker2, H. Just2, E. Bahat-Treidel1, O. Hilt1, S. Dieckerhoff2, J. Würfl1, G. Tränkle1 1Ferdinand-Braun-Institut, 2Technische Universität Berlin	Abstract
8.4	Student Presentation 8.4 Improved Thermal Stabilities in Normally-off GaN MIS-HEMTs Cheng Liu, Hanxing Wang, Shu Yang, Yunyou Lu, Shenghou Liu, Zhikai Tang, Qimeng Jiang, Kevin J. Chen The Hong Kong University of Science and Technology	Abstract
8.5	Simulation of the Impact of Through-Substrate Vias on the Thermal Resistance of Compound Semiconductor Devices Rajesh Baskaran, Allen W. Hanson MACOM Technology Solutions Inc.	Abstract
SESSION 9: GaN ANNEALING/PASSIVATION Chairs: Scott Sheppard, CREE, Inc. Paul Pinsukanjana, IntelliEPI
9.1	Atomic Layer Deposition for GaN Power Semiconductors H.C.M. Knoops, Y. Huang, B. Mackenzie, T. R. Sharp, C. J. Hodson, M. Bourke Oxford Instruments Plasma Technology	Abstract
9.2	Comparative Study of AlGaN/GaN HEMTs with LPCVD- and PECVD-SiNx Passivation Xinhua Wang, Sen Huang, Jinhan Zhang, Yingkui Zheng, Ke Wei, Xiaojuan Chen, Guoguo Liu, Tingting Yuan, Weijun Luo, Lei Pang, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao, Xinyu Liu Chinese Academy of Sciences	Abstract
9.3	Student Presentation A Low-Annealing-Temperature Process Using Si-Incorporated Contact Stacks for n-Type III-Nitride Semiconductors Yi-Che Lee, A F M Saniul Haq, Shyh-Chiang Shen Georgia Institute of Technology	Abstract
9.4	Student Presentation Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs K. Bothe, A. Ma, A. Afshar, P. Motamedi, K. Cadien, D. Barlage University of Alberta	Abstract
9.5	Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs Yohei Kobayashi1, Joel T. Asubar1, Koji Yoshitsugu2, Hirokuni Tokuda1, Masahiro Horita2, Yukiharu Uraoka2, Masaaki Kuzuhara1 1University of Fukui, 2Nara Institute of Science and Technology	Abstract
SESSION 10: TEST/YIELD Chairs: Gene Kohara, Marubeni America Corporation Robert Sadler, Global Communication Semiconductors, LLC
10.1	Improving Return on Invested Capital (ROIC) in PHEMT Technology Peng (Tom) Cheng, Patrick Carroll, Tom Rogers Qorvo, Inc.	Abstract
10.2	Optimization Methodology of Clean Pads Selection for Lifetime and Test Yield on RF bump Wafer Test with Membrane Probe Card I-Pin Chia, Min-Chang Tu, Paul Yeh WIN Semiconductor	Abstract
10.3	Threshold Voltage Extraction Method for 2D Devices with Power-Law µ(nS) Dependence Vincent Mosser, David Seron, Youcef Haddab Itron France	Abstract
10.4	Process Optimization to Improve Known-Good-Die (KGD) Test Accuracy and Wafer Final Yield Yu Wang, Patrick Carroll, Jing Yao, Zach Reitmeier, Tom O’Brien, Doug Melville Qorvo, Inc	Abstract
10.5	Using GaAs Diesort Methods for Efficient High Volume Capacitor Testing Martin J. Brophy, John Stanback, Thomas Dungan Avago Technologies	Abstract
SESSION 11: MANUFACTURING IMPROVMENTS Chairs: Corey Nevers, Qorvo, Inc. David Wang, Global Communication Semiconductors
11.1	Seam Defects Caused by Clear Field Mask Chrome Dimensions Richard Nutter HRL Laboratories, LLC	Abstract
11.2	Effect of Tape Liftoff Tool Settings and Plasma Conditions on Metal Peeling from Polyimide Surfaces Jiang Wang, David Lipka, Sam Mony, Nercy Ebrahimi Skyworks Solution Inc.	Abstract
11.3	Effective in-line Monitoring Structures for Critical Dimension Measurement in Photolithography Chao Wang, Lisa Huynh, Kevin Zoglo Qorvo, Inc.	Abstract
11.4	InAlN/GaN HEMTs With Over 100-GHz Ft Using an Improved Y-Gate Process by an i-line Stepper Hiroyuki Ichikawa, Isao Makabe, Tsuyoshi Kouchi, Ken Nakata, Kazutaka Inoue Sumitomo Electric Industries, Ltd.	Abstract
11.5	Rapid Production Readiness Through Process Margin Study: How to Isolate the Epi and Fab Parameters That Really Matter S. Hurtt, D. Schwartz, J. Yang, S. Nedeljkovic, T. Henderson, F. Pool Qorvo, Inc.	Abstract
SESSION 12: GaAs PROCESSING Chairs: Jim Crites, Skyworks Solutions Keith Wieber, Qorvo, Inc.
12.1	High Aspect Ratio Individual Source Through Wafer Vias for High Frequency GaAs pHEMT Processes H.Stieglauer1, E.Dengler1, M.Hosch1, P.Michel2, C.Teysandier2, H.Blanck1 1United Monolithic Semiconductors Germany, 2United Monolithic Semiconductors France	Abstract
12.2	Student Presentation A CMOS-compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs Jianqiang Lin, Dimitri A. Antoniadis, and Jesús A. del Alamo MIT	Abstract
12.3	Effect of Pt Thickness on the Gate Sinking in a pHEMT Device Debdas Pal, Julia Okvath MACOM	Abstract
12.4	An Integration of On-Chip High-Q Inductors by Cu Redistribution Layer (RDL) with Bumping for InGaP/GaAs HBT MMIC Jung-Hao Hsu, Shu-Hsiao Tsai, Shih-Wei Chen, Kay Wu, Cheng-Kuo Lin, and Dennis Williams, Yu-Chi Wang WIN Semiconductors Corp.	Abstract
12.5	Highly Linear Ka-Band 0.15µm GaAs Power pHEMT Process for Use in Low-Cost Molded QFN Plastic Package Michael Hosch1, Hermann Stieglauer1, Charles Teyssandier2, Philippe Auxemery2, Mikael Richard2, Jan Grünenpütt1, Benoît Lambert2, Didier Floriot2 and Hervé Blanck1 1United Monolithic Semiconductors Germany, 2United Monolithic Semiconductors France	Abstract
SESSION 13: GAN RF DEVICES Chairs: Martin Kuball, University of Bristol David Meyer, Naval Research Lab
13.1	Leakage Current and Two-Tone-Linearity Investigations on 0.5µm AlGaN/GaN HEMTs Bernd Schauwecker, Michael Hosch, Hervé Blanck United Monolithic Semiconductors	Abstract
13.2	AlInN/GaN HEMTs on SiC and on Silicon with Regrown Ohmic Contacts by Selective Ammonia MBE Stefano Tirelli1, Diego Marti1, Lorenzo Lugani2, Marco Malinverni2, J.-F. Carlin2, E. Giraud2, Nicolas Grandjean2, and C. R. Bolognesi1 1Millimeter-Wave Electronics Group, ETH-Zürich, 2ICMP, École Polytechnique Fédérale de Lausanne (EPFL)	Abstract
13.3	Correlation between Luminescence and Current Collapse in AlGaN/GaN HEMTs S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara University of Fukui.	Abstract
13.4	Current Dispersion in Short Channel Al0.32Ga0.68N/GaN HEMTs K. Y. Osipov, S. A. Chevtchenko, O. Bengtsson, P. Kurpas, F. Brunner, N. Kemf, J. Würfl and G. Tränkle Ferdinand-Braun-Institut	Abstract
13.5	Practical Challenges of Processing III-Nitride/Graphene/SiC Devices Andrew D. Koehler1, Neeraj Nepal2, Marko J. Tadjer3, Rachael L. Myers-Ward1, Virginia D. Wheeler1, Travis J. Anderson1, Michael A. Mastro1, Jordan D. Greenlee4, Jennifer K. Hite1, Karl D. Hobart1, Francis J. Kub1 1Naval Research Laboratory, 2Sotera Defense Solutions, 3ASEE Postdoctoral Fellow Residing at NRL, 4NRC Postdoctoral Fellow Residing at NRL	Abstract
SESSION 14: III-V DEVICES Chairs: Hidetoshi Kawasaki, Sony Shyh-Chiang Shen, Georgia Tech
14.1	Invited Presentation Field Plate Models Applied to Manufacturability and RF Frequency Analysis Robert Coffie RLC Solutions	Abstract
14.2	ESD Protection Device for HEMT MMICs Jung-Tao Chung, Shinichiro Takatani, Cheng-Kuo Lin, Hsi-Tsung Lin, Shao-Chang Cheng, Shu-Hsiao Tsai, Cheng-Guan Yuan, Joseph S.M. Liu, Yu-Chi Wang WIN Semiconductors Corp.	Abstract
14.3	pHEMT Device Characterization for Current Transient Time Constant and Link to Error Vector Magnitude S. Nedeljkovic, S. Hurtt Qorvo, Inc.	Abstract
14.4	Student Presentation Development of an InP/GaAsSb DHBT MMIC Process with a Teflon AF Interlevel Dielectric Ralf Flückiger, Rickard Lövblom, Maria Alexandrova, Hansruedi Benedickter, Olivier Ostinelli, C. R. Bolognesi Millimeter-Wave Electronics Group, ETH-Zürich	Abstract
14.5	Student Presentation Characterization of Heterojunction Bipolar Phototransistor with Integrated Two-Section Light-Emitting Transistors Cheng-Han Wu1, Yuan-Fu Hsu2, Gong-Sheng Cheng2, Chao-Hsin Wu1,2 1Graduate Institute of Electronics Engineering, 2Graduate Institute of Photonics and Optoelectronics, National Taiwan University	Abstract
SESSION 15: GaN POWER ELECTRONICS Chairs: Drew Hanser, Veeco Instruments, Inc. Chris Youtsey, MicroLink Devices
15.1	Invited Presentation Vertical Power Semiconductor Devices Based on Bulk GaN Substrates I.C. Kizilyalli, X. Xin, T. Prunty, M. Raj, O. Aktas Avogy Inc.	Abstract
15.2	Above 2000 V Breakdown Voltage on 2 µm-thick Buffer Ultrathin Barrier AlN/GaN-on-Silicon Transistors N. Herbecq, I. Roch-Jeune, A. Linge, M. Zegaoui, F. Medjdoub Institute of Electronics, Microelectronics and Nanotechnology	Abstract
15.3	EC-2.0eV Trap-Related Dynamic RON in GaN/Si MISHEMTs W.Sun, A. Sasikumar, A. Arehart, S. Ringel Ohio State University	Abstract
15.4	Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors S. Warnock, J. A. del Alamo Massachusetts Institute of Technology	Abstract
15.5	RDSON Stability of GaN High Voltage Power Devices Post Long-Term Stress: A New Method to Screen Unstable RDSON Performers Hyeongnam Kim, H. Kannan, Y. Pan, D. Veereddy, R. Garg, C. Zhu, J. Sun, Bhargav Pandya, D. Smith, S. Hardikar, M. Imam, T. McDonald International Rectifier Corp.	Abstract
SESSION 16: GaN RELIABILITY Chairs: Shawn Burnham, HRL Laboratories Karen Moore, Freescale
16.1	Invited Presentation GaN HEMT Lifetesting – Characterizing Diverse Mechanisms Bruce M. Paine, Steve R. Polmanter, Vincent T. Ng, Neil T. Kubota, Carl R. Ignacio Boeing Network and Space Systems	Abstract
16.2	Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons T.J. Anderson1, A.D. Koehler1, P. Specht2, B.D. Weaver1, J.D. Greenlee1, M.J. Tadjer1, J.K. Hite1, M.A. Mastro1, M. Porter3, M. Wade3, O.C. Dubon2, M. Luysberg4, K.D. Hobart1, T.R. Weatherford3, F.J. Kub1 1Naval Research Laboratory, 2University of California, Berkeley, 3Naval Postgraduate School, 4Ernst-Ruska Research Center	Abstract
16.3	Drain - Bulk Leakage Current Mechanisms and Model for Power GaN HEMT on Si Substrate Mirwazul Islam1, Grigory Simin1, Naveen Tipirneni2, Jungwoo Joh2, Vijay Krishnamurthy2, Sameer Pendharkar2 1University of South Carolina, 2Texas Instruments, Dallas, TX	Abstract
16.4	Hot-Phonon Effect on the Reliability of GaN-Based Heterostructure Field-Effect Transistors Cemil Kayis1, Hadis Morkoç2 1ASELSAN, Inc., 2Virginia Commonwealth University	Abstract
SESSION 17: POSTER Chairs: Nick Kolarich, Epiworks Kelli Rivers, Vacuum Engineering & Materials Co.
17.1	Student Presentation 0.18 mm E/D-mode pHEMT using I-line Photolithography for Microwave Application Min-Li Chou1, Yi-Shun Lin2, Ming-Tai Wu2, Sheng-Chun Wang2, Hsin-Chi Wang2, Li-Chung Lee2, Zhi-Peng Lin2, Chih-Yu Tseng2, Fred CH Lin2, Pang-Shao Chen2, Houng-Chi Wei2, Chian_Gau1, Shih1, Hsien-Chin Chiu1 1Chang Gung University, 2Wavetek Microelectronics Corp.	Abstract
17.2	Student Presentation 6A-Operating Current GaN-Based Enhancement-Mode High Electron Mobility Transistors Chih-Hao Wang, Liang-Yu Su, Finella Lee, Jian-Jang Huang National Taiwan University	Abstract
17.3	Student Presentation Enhancement of Cut-off Frequency and Optical Bandwidth in Light-Emitting Transistors at High Temperature I-Te Lee, Chao-Hsin Wu National Taiwan University	Abstract
17.4	Micromachined p-GaN Gate Normally-off PowerHEMT with an Optimized Air-Bridge Matrix Layout Design Chih-Wei Yang1, Hsiang-Chun Wang1, Hsien-Chin Chiu1, Chien-Kai Tung2, Tsung-Cheng Chang2, Schang-jing Hon2 1Chang Gung University, 2Huga Optotech Inc.	Abstract
17.5	Optical Frequency Response of GaN-based Light-emitting Diodes with Embedded Photonic Crystals Yu-Feng Yin, Yen-Hsiang Hsu, Liang-Yu Su, Yuan-Fu Hsu, Li-Cheng Chang, Chao-Hsin Wu, JianJang Huang National Taiwan University	Abstract
17.6	Si-Ge-Sn based Compound Semiconductors for Photonic Applications Radek Roucka, Andrew Clark, Nam Pham Translucent Inc.	Abstract
17.7	Withdrawn
17.8	Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs Hyung Sup Yoon, Byoung Gue Min, Jong Min Lee, Dong Min Kang, Ho Kyun Ahn, Hae Cheon Kim, Jong Won Lim Electronics and Telecommunications Research Institute	Abstract
17.9	Student Presentation Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers Yun-Hsiang Wang1,4, Yung C. Liang1, Ganesh S. Samudra1, Bo-Jhang Huang2, Ya-Chu Liao2, Chih-Fang Huang2, Wei-Hung Kuo3, Guo-Qiang Lo4 1National University of Singapore, 2National Tsing Hua University, 3Industrial Technology Research Institute, 4ASTAR Institute of Microelectronics*	Abstract


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SESSION 1: PLENARY Chairs: David Via, AFRL
1.1	Invited Presentation Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-Efficiency Systems Timothy D. Heidel1, David Henshall1, Pawel Gradzki2 1Advanced Research Projects Agency – Energy (ARPA-E) U.S. Department of Energy, 2Booz Allen Hamilton	Abstract
1.2	Invited Presentation Compound Semiconductor Technology for Modern RF Modules: Status and Future Directions Daniel S. Green1, Carl L. Dohrman2, Avinash S. Kane2, Tsu-Hsi Chang3 1DARPA, 2Booz Allen Hamilton, 3HetInTec Corp	Abstract
1.3	Invited Presentation Importance of High Frequency Compound Semiconductor Devices for Wireless Power Transfer using Direct-Current-Resonance System Tatsuya Hosotani Murata Manufacturing Co., Ltd	Abstract
SESSION 2: COMPOUND SEMICONDUCTOR TRENDS Chairs: Michelle Bourke, Kilbrydon Consulting Barb Landini, Sumika Electronic Materials
2.1	Invited Presentation Mobile RF Front End Integration James P. Young Skyworks Solutions, Inc.	Abstract
2.2	Invited Presentation Packaging Trends in the Wireless Industry Robert Darveaux, Tony LoBianco, Lori DeOrio, Andrew Kay, Bob Williams Skyworks Solutions, Inc.	Abstract
2.3	Market and Technology Trends in WBG Materials for Power Electronics Applications Dr. Hong LIN Compound Semiconductor Market and Technology Analyst, Yole Développement	Abstract
2.4	6-inch VCSEL Wafer Foundry Economics David Cheskis ANADIGICS, INC.	Abstract
SESSION 3: GaN MANUFACTURING Chairs: Dane Henry, Qorvo, Inc. Toshihide Kikkawa, Transphorm
3.1	0.15μm GaN MMIC Manufacturing Technology for 2-50 GHz Power Applications Sabyasachi Nayak, Ming-Yih Kao, Hua-Tang Chen, Trish Smith, Peter Goeller, Weixiang Gao, Jose Jimenez, Shuoqi Chen, Charles Campbell, Gergana Drandova, and Robert Kraft Qorvo, Inc.	Abstract
3.2	RF Performance Improvement of 0.25μm GaN HEMT Foundry Technology Jhih-Han Du, Che-Kai Lin, Sheng-Wen Peng, Fu-Chuan Chu, Kai-Sin Cho, Yue-Ting Lin, Wei-Chou Wang, Walter Wohlmuth WIN Semiconductors Corp	Abstract
3.3	Effects of Underlying Metals on Textures of Plated Au films on GaN Kazuhiro Maeda, Koichiro Nishizawa,Daisuke Suzuki, Toshihiko Shiga and Hitoshi Watanabe Mitsubishi Electric Corporation	Abstract
3.4	Enhanced Visual Performance in GaN HEMT Technology Kai-Sin Cho, Yue-Ting Lin, Wei-Chou Wang, Jhih-Han Du, I-Te Cho, and Walter Wohlmuth WIN Semiconductors Corp.	Abstract
3.5	High Power Plastic Packaging with GaN Quinn D. Martin MACOM Technology Solutions	Abstract
SESSION 4: MATERIALS Chairs: Guoliang Zhou, Skyworks Kevin Stevens, IQE
4.1	A Mechanism and a Solution to non-Uniformity of pHEMT Wafers Grown by MBE Process Guoliang Zhou, Mark Borek Skyworks Solutions, Inc.	Abstract
4.2	Fast and Highly Accurate in-situ Calibration of AlGaAs Ternary Composition for MOVPE-based Growth of Edge-Emitting Diode Lasers M. Zorn1, O. Schulz3, A.J. Spring Thorpe2, J.-T. Zettler3 1JENOPTIK Diode Lab GmbH, 2NRC of Canada, 3LayTec AG	Abstract
4.3	Orderly Array of in-plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-free GaAs Thin Films Qiang Li, Kar Wei Ng, Kei May Lau Hong Kong University of Science and Technology	Abstract
4.4	Fabrication of III-V virtual Substrate on 200 mm Silicon for III-V and Si Devices Integration David Kohen1, Riko I Made1, Shuyu Bao1,2, Kwang Hong Lee1, Kenneth Eng Kian Lee1, Chuan Seng Tan 2, Soon Fatt Yoon 1,2, Eugene A. Fitzgerald 1,3 1Singapore-MIT Alliance for Research and Technology Center, 2Nanyang Technological University, 3Massachusetts Institute of Technology	Abstract
4.5	Improvements in Processing - Carrier and Material Impacts Molly Hladik1, Aric Shorey2 1Brewer Science, Inc, 2Corning, Inc	Abstract
SESSION 5: METALLIZATION Chairs: Heribert Zull, Osram Opto Semiconductors Shiban Tiku, Skyworks Solutions
5.1	Dynamics of Surface Treatments and Pre-Cleans for High Volume Wafer Manufacturing J. Crites1, W. Snodgrass2, L. Luu3 and Collaborators 1Skyworks Solutions Inc., 2Avago Technologies, 3Global Communication Semiconductors LLC	Abstract
5.2	A Simulation of Wafer Temperature-Time Profile in PVD Process Using an Exponential Model and Its Applications Xiaokang Huang1, Romek Bobkowski1, Duofeng Yue1, Craig Hall1, Charles Dark1, Arthur McGeown2, Chris Jones2, Paulo Lima2, Paul Rich2 1Qorvo, Inc., 2SPTS Technologies Ltd.	Abstract
5.3	Stress Reduction in Metallization using in-situ Stress Measurement and Plasma Assisted Evaporation Silvia Schwyn Thöny, Jürgen Buchholz, Reinhard Benz Evatec AG.	Abstract
5.4	Wafer-to-Wafer Metal Sputter Deposition Process Control by Automatic Deposition Rate Adjustment Chang’e Weng1, Jinhong Yang1, Ron Herring1, Brian Zevenbergen1, Joel Anderson2, Chris Jones2, Liam Cunnane2 1Qorvo, Inc., 2SPTS Technologies Ltd.	Abstract
SESSION 6: GaN MATERIALS Chairs: John Blevins, Air Force Research Laboratory Judy Kronwasser, NOVASiC
6.1	The Growth of Low Wafer Bow AlGaN/GaN Structure on 200mm Si(111) Chieh-Chih Huang1, Frank Ried2, Tomas Palacios3, Soo Jin Chua4, Eugene A Fitzgerald5 1Singapore-MIT Alliance for Research and Technology Center, 2AIXTRON SE, 3Department of Electrical Engineering and Computer Science-MIT, 4National University of Singapore, 5Department of Materials Science and Engineering-MIT.	Abstract
6.2	GaN MOCVD on Si via Single Crystal Rare-Earth Oxide Buffer Layer Rytis Dargis, Erdem Arkun, Radek Roucka, Andrew Clark Translucent Inc.	Abstract
6.3	Characterization of Strained AlGaN/GaN HEMTs on CMP-thinned Si Substrates Marko J. Tadjer1, Travis J. Anderson2, Andrew D. Koehler2, Jordan D. Greenlee3, Karl D. Hobart2, Fritz J. Kub2 1American Society for Engineering Education, 2United States Naval Research Laboratory, 3National Research Council	Abstract
6.4	Effect of Capping Structure on High Temperature Annealing of GaN Jordan D. Greenlee1, Boris N. Feigelson2, Jennifer K. Hite2, Karl D. Hobart2, Fritz J. Kub2, Travis J. Anderson2 1National Research Council, 2Naval Research Laboratory	Abstract
6.5	Withdrawn
SESSION 7: GaN DRY ETCH Chairs: Jansen Uyeda, Northrop Grumman (AS) Russ Westerman, Plasma-Therm, LLC
7.1	Optimizing the SiC Plasma Etching Process for Manufacturing Power Devices Haruna Oda, Peter Wood, HIromichi Ogiya, Seita Miyoshi, Osamu Tsuji SAMCO Inc.	Abstract
7.2	Electrical Properties of GaN Etched by Low Bias Power Process Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Keiji Watanabe Fujitsu Laboratories Ltd.	Abstract
7.3	SiC / GaN Via Process – in Search for Perfection Ju-Ai Ruan, Craig Hall, Harold Isom, Tom Nagle Qorvo, Inc.	Abstract
7.4	Qualification of Backside Via Etch Process in GaN-on-SiC HEMT Devices Frank Fan, Minkar Chen, Daniel Hou, David Wang Global Communication Semiconductors, LLC	Abstract
7.5	Analysis and Optimization of a Through Substrate Via Etch Process for Silicon Carbide Substrates Andreas Thies1, Wilfred John1, Stephan Freyer1, Jaime Beltran2, Olaf Krüger1 1Ferdinand-Braun-Institut, 2LayTec AG.	Abstract
SESSION 8: THERMAL MANAGEMENT FOR HIGH POWER DEVICES Chairs: Tom Low, Keysight Technologies Chang-Hwang Hua, WIN Semiconductors Corp.
8.1	Student Presentation 8.1 Measuring the Thermal Conductivity of the GaN Buffer Layer in AlGaN/GaN HEMTs: Effect of Carbon and Iron Doping M.Power1, J.W. Pomeroy1, Y.Otoki2, T.Tanaka2, J.Wada2, M. Kuzuhara3, W.Jantz4, A.Souzis5, M.Kuball1 1University of Bristol, 2Hitachi Metals, 3University of Fukui, 4SemiMap Scientific Instruments, 5II-VI Wide Bandgap Group	Abstract
8.2	Rapid Characterization of GaN-on-Diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance Huarui Sun1, James W. Pomeroy1, Roland B. Simon1, Daniel Francis2, Firooz Faili2, Daniel J. Twitchen2, Martin Kuball1 1University of Bristol, 2Element Six Technologies	Abstract
8.3	Comparison of Thermal Properties of Packaged AlGaN/GaN HFETs on Si and n-SiC Substrates R. Zhytnytska1, J. Böcker2, H. Just2, E. Bahat-Treidel1, O. Hilt1, S. Dieckerhoff2, J. Würfl1, G. Tränkle1 1Ferdinand-Braun-Institut, 2Technische Universität Berlin	Abstract
8.4	Student Presentation 8.4 Improved Thermal Stabilities in Normally-off GaN MIS-HEMTs Cheng Liu, Hanxing Wang, Shu Yang, Yunyou Lu, Shenghou Liu, Zhikai Tang, Qimeng Jiang, Kevin J. Chen The Hong Kong University of Science and Technology	Abstract
8.5	Simulation of the Impact of Through-Substrate Vias on the Thermal Resistance of Compound Semiconductor Devices Rajesh Baskaran, Allen W. Hanson MACOM Technology Solutions Inc.	Abstract
SESSION 9: GaN ANNEALING/PASSIVATION Chairs: Scott Sheppard, CREE, Inc. Paul Pinsukanjana, IntelliEPI
9.1	Atomic Layer Deposition for GaN Power Semiconductors H.C.M. Knoops, Y. Huang, B. Mackenzie, T. R. Sharp, C. J. Hodson, M. Bourke Oxford Instruments Plasma Technology	Abstract
9.2	Comparative Study of AlGaN/GaN HEMTs with LPCVD- and PECVD-SiNx Passivation Xinhua Wang, Sen Huang, Jinhan Zhang, Yingkui Zheng, Ke Wei, Xiaojuan Chen, Guoguo Liu, Tingting Yuan, Weijun Luo, Lei Pang, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao, Xinyu Liu Chinese Academy of Sciences	Abstract
9.3	Student Presentation A Low-Annealing-Temperature Process Using Si-Incorporated Contact Stacks for n-Type III-Nitride Semiconductors Yi-Che Lee, A F M Saniul Haq, Shyh-Chiang Shen Georgia Institute of Technology	Abstract
9.4	Student Presentation Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs K. Bothe, A. Ma, A. Afshar, P. Motamedi, K. Cadien, D. Barlage University of Alberta	Abstract
9.5	Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs Yohei Kobayashi1, Joel T. Asubar1, Koji Yoshitsugu2, Hirokuni Tokuda1, Masahiro Horita2, Yukiharu Uraoka2, Masaaki Kuzuhara1 1University of Fukui, 2Nara Institute of Science and Technology	Abstract
SESSION 10: TEST/YIELD Chairs: Gene Kohara, Marubeni America Corporation Robert Sadler, Global Communication Semiconductors, LLC
10.1	Improving Return on Invested Capital (ROIC) in PHEMT Technology Peng (Tom) Cheng, Patrick Carroll, Tom Rogers Qorvo, Inc.	Abstract
10.2	Optimization Methodology of Clean Pads Selection for Lifetime and Test Yield on RF bump Wafer Test with Membrane Probe Card I-Pin Chia, Min-Chang Tu, Paul Yeh WIN Semiconductor	Abstract
10.3	Threshold Voltage Extraction Method for 2D Devices with Power-Law µ(nS) Dependence Vincent Mosser, David Seron, Youcef Haddab Itron France	Abstract
10.4	Process Optimization to Improve Known-Good-Die (KGD) Test Accuracy and Wafer Final Yield Yu Wang, Patrick Carroll, Jing Yao, Zach Reitmeier, Tom O’Brien, Doug Melville Qorvo, Inc	Abstract
10.5	Using GaAs Diesort Methods for Efficient High Volume Capacitor Testing Martin J. Brophy, John Stanback, Thomas Dungan Avago Technologies	Abstract
SESSION 11: MANUFACTURING IMPROVMENTS Chairs: Corey Nevers, Qorvo, Inc. David Wang, Global Communication Semiconductors
11.1	Seam Defects Caused by Clear Field Mask Chrome Dimensions Richard Nutter HRL Laboratories, LLC	Abstract
11.2	Effect of Tape Liftoff Tool Settings and Plasma Conditions on Metal Peeling from Polyimide Surfaces Jiang Wang, David Lipka, Sam Mony, Nercy Ebrahimi Skyworks Solution Inc.	Abstract
11.3	Effective in-line Monitoring Structures for Critical Dimension Measurement in Photolithography Chao Wang, Lisa Huynh, Kevin Zoglo Qorvo, Inc.	Abstract
11.4	InAlN/GaN HEMTs With Over 100-GHz Ft Using an Improved Y-Gate Process by an i-line Stepper Hiroyuki Ichikawa, Isao Makabe, Tsuyoshi Kouchi, Ken Nakata, Kazutaka Inoue Sumitomo Electric Industries, Ltd.	Abstract
11.5	Rapid Production Readiness Through Process Margin Study: How to Isolate the Epi and Fab Parameters That Really Matter S. Hurtt, D. Schwartz, J. Yang, S. Nedeljkovic, T. Henderson, F. Pool Qorvo, Inc.	Abstract
SESSION 12: GaAs PROCESSING Chairs: Jim Crites, Skyworks Solutions Keith Wieber, Qorvo, Inc.
12.1	High Aspect Ratio Individual Source Through Wafer Vias for High Frequency GaAs pHEMT Processes H.Stieglauer1, E.Dengler1, M.Hosch1, P.Michel2, C.Teysandier2, H.Blanck1 1United Monolithic Semiconductors Germany, 2United Monolithic Semiconductors France	Abstract
12.2	Student Presentation A CMOS-compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs Jianqiang Lin, Dimitri A. Antoniadis, and Jesús A. del Alamo MIT	Abstract
12.3	Effect of Pt Thickness on the Gate Sinking in a pHEMT Device Debdas Pal, Julia Okvath MACOM	Abstract
12.4	An Integration of On-Chip High-Q Inductors by Cu Redistribution Layer (RDL) with Bumping for InGaP/GaAs HBT MMIC Jung-Hao Hsu, Shu-Hsiao Tsai, Shih-Wei Chen, Kay Wu, Cheng-Kuo Lin, and Dennis Williams, Yu-Chi Wang WIN Semiconductors Corp.	Abstract
12.5	Highly Linear Ka-Band 0.15µm GaAs Power pHEMT Process for Use in Low-Cost Molded QFN Plastic Package Michael Hosch1, Hermann Stieglauer1, Charles Teyssandier2, Philippe Auxemery2, Mikael Richard2, Jan Grünenpütt1, Benoît Lambert2, Didier Floriot2 and Hervé Blanck1 1United Monolithic Semiconductors Germany, 2United Monolithic Semiconductors France	Abstract
SESSION 13: GAN RF DEVICES Chairs: Martin Kuball, University of Bristol David Meyer, Naval Research Lab
13.1	Leakage Current and Two-Tone-Linearity Investigations on 0.5µm AlGaN/GaN HEMTs Bernd Schauwecker, Michael Hosch, Hervé Blanck United Monolithic Semiconductors	Abstract
13.2	AlInN/GaN HEMTs on SiC and on Silicon with Regrown Ohmic Contacts by Selective Ammonia MBE Stefano Tirelli1, Diego Marti1, Lorenzo Lugani2, Marco Malinverni2, J.-F. Carlin2, E. Giraud2, Nicolas Grandjean2, and C. R. Bolognesi1 1Millimeter-Wave Electronics Group, ETH-Zürich, 2ICMP, École Polytechnique Fédérale de Lausanne (EPFL)	Abstract
13.3	Correlation between Luminescence and Current Collapse in AlGaN/GaN HEMTs S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara University of Fukui.	Abstract
13.4	Current Dispersion in Short Channel Al0.32Ga0.68N/GaN HEMTs K. Y. Osipov, S. A. Chevtchenko, O. Bengtsson, P. Kurpas, F. Brunner, N. Kemf, J. Würfl and G. Tränkle Ferdinand-Braun-Institut	Abstract
13.5	Practical Challenges of Processing III-Nitride/Graphene/SiC Devices Andrew D. Koehler1, Neeraj Nepal2, Marko J. Tadjer3, Rachael L. Myers-Ward1, Virginia D. Wheeler1, Travis J. Anderson1, Michael A. Mastro1, Jordan D. Greenlee4, Jennifer K. Hite1, Karl D. Hobart1, Francis J. Kub1 1Naval Research Laboratory, 2Sotera Defense Solutions, 3ASEE Postdoctoral Fellow Residing at NRL, 4NRC Postdoctoral Fellow Residing at NRL	Abstract
SESSION 14: III-V DEVICES Chairs: Hidetoshi Kawasaki, Sony Shyh-Chiang Shen, Georgia Tech
14.1	Invited Presentation Field Plate Models Applied to Manufacturability and RF Frequency Analysis Robert Coffie RLC Solutions	Abstract
14.2	ESD Protection Device for HEMT MMICs Jung-Tao Chung, Shinichiro Takatani, Cheng-Kuo Lin, Hsi-Tsung Lin, Shao-Chang Cheng, Shu-Hsiao Tsai, Cheng-Guan Yuan, Joseph S.M. Liu, Yu-Chi Wang WIN Semiconductors Corp.	Abstract
14.3	pHEMT Device Characterization for Current Transient Time Constant and Link to Error Vector Magnitude S. Nedeljkovic, S. Hurtt Qorvo, Inc.	Abstract
14.4	Student Presentation Development of an InP/GaAsSb DHBT MMIC Process with a Teflon AF Interlevel Dielectric Ralf Flückiger, Rickard Lövblom, Maria Alexandrova, Hansruedi Benedickter, Olivier Ostinelli, C. R. Bolognesi Millimeter-Wave Electronics Group, ETH-Zürich	Abstract
14.5	Student Presentation Characterization of Heterojunction Bipolar Phototransistor with Integrated Two-Section Light-Emitting Transistors Cheng-Han Wu1, Yuan-Fu Hsu2, Gong-Sheng Cheng2, Chao-Hsin Wu1,2 1Graduate Institute of Electronics Engineering, 2Graduate Institute of Photonics and Optoelectronics, National Taiwan University	Abstract
SESSION 15: GaN POWER ELECTRONICS Chairs: Drew Hanser, Veeco Instruments, Inc. Chris Youtsey, MicroLink Devices
15.1	Invited Presentation Vertical Power Semiconductor Devices Based on Bulk GaN Substrates I.C. Kizilyalli, X. Xin, T. Prunty, M. Raj, O. Aktas Avogy Inc.	Abstract
15.2	Above 2000 V Breakdown Voltage on 2 µm-thick Buffer Ultrathin Barrier AlN/GaN-on-Silicon Transistors N. Herbecq, I. Roch-Jeune, A. Linge, M. Zegaoui, F. Medjdoub Institute of Electronics, Microelectronics and Nanotechnology	Abstract
15.3	EC-2.0eV Trap-Related Dynamic RON in GaN/Si MISHEMTs W.Sun, A. Sasikumar, A. Arehart, S. Ringel Ohio State University	Abstract
15.4	Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors S. Warnock, J. A. del Alamo Massachusetts Institute of Technology	Abstract
15.5	RDSON Stability of GaN High Voltage Power Devices Post Long-Term Stress: A New Method to Screen Unstable RDSON Performers Hyeongnam Kim, H. Kannan, Y. Pan, D. Veereddy, R. Garg, C. Zhu, J. Sun, Bhargav Pandya, D. Smith, S. Hardikar, M. Imam, T. McDonald International Rectifier Corp.	Abstract
SESSION 16: GaN RELIABILITY Chairs: Shawn Burnham, HRL Laboratories Karen Moore, Freescale
16.1	Invited Presentation GaN HEMT Lifetesting – Characterizing Diverse Mechanisms Bruce M. Paine, Steve R. Polmanter, Vincent T. Ng, Neil T. Kubota, Carl R. Ignacio Boeing Network and Space Systems	Abstract
16.2	Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons T.J. Anderson1, A.D. Koehler1, P. Specht2, B.D. Weaver1, J.D. Greenlee1, M.J. Tadjer1, J.K. Hite1, M.A. Mastro1, M. Porter3, M. Wade3, O.C. Dubon2, M. Luysberg4, K.D. Hobart1, T.R. Weatherford3, F.J. Kub1 1Naval Research Laboratory, 2University of California, Berkeley, 3Naval Postgraduate School, 4Ernst-Ruska Research Center	Abstract
16.3	Drain - Bulk Leakage Current Mechanisms and Model for Power GaN HEMT on Si Substrate Mirwazul Islam1, Grigory Simin1, Naveen Tipirneni2, Jungwoo Joh2, Vijay Krishnamurthy2, Sameer Pendharkar2 1University of South Carolina, 2Texas Instruments, Dallas, TX	Abstract
16.4	Hot-Phonon Effect on the Reliability of GaN-Based Heterostructure Field-Effect Transistors Cemil Kayis1, Hadis Morkoç2 1ASELSAN, Inc., 2Virginia Commonwealth University	Abstract
SESSION 17: POSTER Chairs: Nick Kolarich, Epiworks Kelli Rivers, Vacuum Engineering & Materials Co.
17.1	Student Presentation 0.18 mm E/D-mode pHEMT using I-line Photolithography for Microwave Application Min-Li Chou1, Yi-Shun Lin2, Ming-Tai Wu2, Sheng-Chun Wang2, Hsin-Chi Wang2, Li-Chung Lee2, Zhi-Peng Lin2, Chih-Yu Tseng2, Fred CH Lin2, Pang-Shao Chen2, Houng-Chi Wei2, Chian_Gau1, Shih1, Hsien-Chin Chiu1 1Chang Gung University, 2Wavetek Microelectronics Corp.	Abstract
17.2	Student Presentation 6A-Operating Current GaN-Based Enhancement-Mode High Electron Mobility Transistors Chih-Hao Wang, Liang-Yu Su, Finella Lee, Jian-Jang Huang National Taiwan University	Abstract
17.3	Student Presentation Enhancement of Cut-off Frequency and Optical Bandwidth in Light-Emitting Transistors at High Temperature I-Te Lee, Chao-Hsin Wu National Taiwan University	Abstract
17.4	Micromachined p-GaN Gate Normally-off PowerHEMT with an Optimized Air-Bridge Matrix Layout Design Chih-Wei Yang1, Hsiang-Chun Wang1, Hsien-Chin Chiu1, Chien-Kai Tung2, Tsung-Cheng Chang2, Schang-jing Hon2 1Chang Gung University, 2Huga Optotech Inc.	Abstract
17.5	Optical Frequency Response of GaN-based Light-emitting Diodes with Embedded Photonic Crystals Yu-Feng Yin, Yen-Hsiang Hsu, Liang-Yu Su, Yuan-Fu Hsu, Li-Cheng Chang, Chao-Hsin Wu, JianJang Huang National Taiwan University	Abstract
17.6	Si-Ge-Sn based Compound Semiconductors for Photonic Applications Radek Roucka, Andrew Clark, Nam Pham Translucent Inc.	Abstract
17.7	Withdrawn
17.8	Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs Hyung Sup Yoon, Byoung Gue Min, Jong Min Lee, Dong Min Kang, Ho Kyun Ahn, Hae Cheon Kim, Jong Won Lim Electronics and Telecommunications Research Institute	Abstract
17.9	Student Presentation Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers Yun-Hsiang Wang1,4, Yung C. Liang1, Ganesh S. Samudra1, Bo-Jhang Huang2, Ya-Chu Liao2, Chih-Fang Huang2, Wei-Hung Kuo3, Guo-Qiang Lo4 1National University of Singapore, 2National Tsing Hua University, 3Industrial Technology Research Institute, 4ASTAR Institute of Microelectronics*	Abstract

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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2015 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form
or contact Margaret Doyle at mdoyle@gaasmantech.org