SESSION I: PLENARY |
1.1 |
GaAs HBT RF UCs for Wireless Applications A Profitable Business |
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David A. Norbury
RF Micro Devices |
1.2 |
An Overview of Local Multipoint Communications Systems |
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James W. McCoy and D. Gary Lerude
Texas Instruments, Inc. |
SESSION II: PROCESING I
Chair: Stacey Bui, TRW Space & Electronics |
2.1 |
A Comparison of InAs/GaAs Suplerlattice Etch Rates and Photoresist Undercutting for Nan-Alloyed Ohmic Contacts Using a Citric Acid: Hydrogen Peroxide Etchant |
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Carl Pettiford, Charles Havasy, Christopher Bozada, Charles Cerny, Gregory DeSalvo, Ross Dettmer, John Ebel, James Gillespie, Thomas Jenkins, Kenichi Nakano, Tony Quach, James Sewell, G. David Via
Wright-Patterson AFB |
2.2 |
Threshold Voltage Control of the GaAs MESFET by Varying Dummy Gate Opening during Recess Etching |
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Chang-Tae Kih, Won-Sang Lee and Ki-Woong Chung
LG Electronics Research Center |
2.3 |
Optimization of V-Band Power pHEMT Device Performance by AFM |
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E.S. Ponti, M. Hu, J.J. Brown, L.D. Nguyen, J.J. Vajo, M.V. Le, M.D. Wetzel
Hughes Research Laboratories |
2.4 |
Impact of Gate Recess Profile on GaAs Microwave Device Performance Using AFM |
|
Milton Tam, Marcus King, C.S. Wu, Mike Sanna, Hal Edwards, Rudye McGlothin
Texas Instruments, TRW |
SESSION III: MANUFACTURING I
Chair: Wayne Kennan, Fujitsu Compound Semiconductor, Inc |
3.1 |
Bump Technologies for GaAs Interconnection |
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C.L. Pillote, M.E. Grupen-Shemansky, S.P. Beaudoin, T.S. Cale
Snell & wilmer LLP, Motorola, Inc., Arizona State University |
3.2 |
Manufacturing GaAs – Based Solar Cells |
|
F. Ho, Y.C.M. Yeh, S. Khemthong and M. Yang
TECSTAR/Applied Solar Division |
3.3 |
More for Less: Die Cost Reduction Through Shrink |
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L.S. Klingbeil, M.R. Wilson, C.D. Della
Motorola Semiconductor Products |
3.4 |
Manufacturability of 0.25 um-Gate pHEMPT X-Band Power Amplifiers on 50 um-Thick GaAs Substrates with Rectangular Via Holes |
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Paul Harris, David Boone, Marcus King, John Stidham, Glen Bronson, Ken Decker, Saligrama Subbarao
Texas Instruments |
SESSION IV: RELIABILITY I
Chair: Zaher Bardai, Hughes Microelectronics |
4.1 |
Reliability of GaAs-based Heterojunction Bipolar Transistors |
|
T. Hunderson, W.L. Chen, M. Sanna
Texas Instruments |
4.2 |
PHEMT Reliability: The Importance of RF Life Testing |
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L. Aucoin, M. Benedek, M.Cobb, G. Kelley
Raytheon Advanced Device Center |
4.3 |
Direct Observation of Field Enhanced Degradation in PHEMTs |
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J.I. Malin, C.S. Wu, S. Hillard, C. Fuller, P. Basham, K. Decker
Texas Instruments |
4.4 |
Ti—Gate Metal Induced PHEMT Degradation in Hydrogen |
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P:.C. Chao, W. Hu H. DeOrio, A.W. Swanson
Sanders, Lockheed Martin Co.
|
SESSION V: DEVICES
Chair: Yoon Soo Park, Office of Naval Research |
5.1 |
Millimeter-Wave Monolithic IC Technology for 60 GHz Application |
|
Yuu Watanabe, Naofumi Okubo
Fujitsu Laboratories, Inc. |
5.2 |
Power PHEMTs – Beyond Power and Efficiency |
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M. Schindler, D. Teeter, A. Platzker, S. Bouthillette, J. Griffiths, K. Kessler, A. Forbes
Raytheon Microelectronics Research Laboratories |
5.3 |
Comparison of Ka-B and LNA Performance Using Ion Implanted MESFET and p-HEMT Processes |
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A.Kurdoghlian, K.N. Fry, G. Luong, D. Hou, M. Sokolich, W. Lam, C.D. Chang, Z. Bardai
Hughes Aircraft Company |
5.4 |
Collector Thickness Effects on the Performance and Manufacturability of InGaP/GaAs HBTs |
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D.A. Ahmari, M.T. Fresina, Q.J. Hartmann, D.W. Barlage, M. Fend, G.E. Stillman
University of Illinois |
5.5 |
Epitaxy-on-Electronics: Building Monolithic OEICs on Commercial GaAs VLSI |
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J. F. Ahadian, S.G. Patterson, P.T. Vaidyanathan, Y. Royter, D. Mull, G.S. Petrich, W.D. Goodhue, S. Prasada, L.A. Kolodziejski, C.G. Fonstad, Jr. |
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Massachusetts Institute of Technology, Northeaster University, University of Massachusetts |
5.6 |
Monolithically Integrated Optoelectronic Receivers and Transmitters on GaAs-Wafers |
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T. Jakobus, W. Bronner, A. Gaymann, F. Grotjahn, J. Hornung, V. Hurm, K. Kohler, M. Ludwig, Z.G. Want
Franhofer-Institute |
SESSION VI: PROCESS II
Chair: Bruce Bernhardt, Motorola |
6.1 |
Micromaching of High Performance Circuits for Microwave and Millimeter-wave Applications |
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Chuck Goldsmith, Susan Exhelman, John Randall, Zhimin Yao, Ted Moise, David Denniston, Shea Chen, Mary Avery
Texas Instruments Inc. |
6.2 |
Single Layer Integrated Metal Field Effect Transistor (SLIMFET) Process Using a GaAs Secondary Mask |
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T. Quach, C. Bozada, D. DeSalvo, C. Cerny, R. Dettmer, J. Ebel, J. Gillespie, C. Havasy, T. Jekins, K. Nakano, C. Pettiford, J. Sewell, G.D. Via
Wright-Patterson AFB |
6.3 |
Development of a Manufacturable MESFET for 3V Wireless Applications |
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M.L. Balzan, R.J. Crampton, W.F. Polhamus, R.A. Sadler
ITT GTS, Cree Research, Inc. |
6.4 |
Modeling Emitter Ledge Behavior in AlGaAs/GaAs HBTs |
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M. Wetzel, M.C. Ho, P. Asbeck, P. Zampardi, C.Chang, C. Farley, M.F. Chang
University of California, San Diego, Rockwell International |
6.5 |
The Evolution of GPS Receivers at Rockwell International Over Two Decades, and the Role of GaAs |
|
Loney R. Duncan
Rockwell International Corporation |
|
7.1 |
High Quality and High Uniformity Activation of Si Implanted GaAs by Rapid Thermal Processing Using Ceramics AIN Susceptors |
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Shigeki Yamaga, Bunji Hisamori, Chikao Kimura
New Japan Radio Co., Ltd. |
7.2 |
Factors Influencing Silicon Nitride Fracturing and Delamination In GaAs Devices |
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M.L. Balzan, J.W. Crites, J.W.L. Dilley
ITT Industries |
7.3 |
Improvement of Furnace Annealing Process to Suppress Slipline Generation |
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Y. Saito, S. Nakajima, T. Ueda, M. Kuroda
Sumitomo Electric Industries, Ltd. |
SESSION VIII: Interactive Forum
Chair: Ding Day, Hewlett Packard |
8.1 |
Manufacturability of the InGaP/GaAs HBT Dual Etch-Stop Emitter Ledge (DESL) |
|
M.T. Fresina, Q.J. Hartmann, D.A. Ahmari, D.W. Barlage, M. Heins, M. Feng, G.E. Stillman
University of Illinois |
8.2 |
Manufacturable Solution for Low-Cost Millimeter-Wave IC’s |
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H. Hsia J.R. Middleton, R. Shimon, D. Scherrer, M. Heins, D. Caruth, J. Fendrich, M Feng
University of Illinois at Urbana-Champaign |
8.3 |
Power Slump, Hydrogen Degradation, or Gate Lag – Pick Your Enemy |
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R.E. Leoni III, J.C. M. Hwang
Lehigh University, Microwave Technology, Inc. |
8.4 |
Taguchi Tollerance Analysis of MMICs |
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S.P. Marsh, S.D. Wadsworth
GEC Marconi Materials Technology |
8.5 |
Qualifying Second Source pHEMT Wafers |
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R. Lee, L.D. Hou, P. Chu, M. Cole, C.K. Pao, C.D. Chang, T.A. Midford
Hughes Aircraft Company |
8.6 |
VGF GaAs for Ion-Implantation: 1 Year Later |
|
M.J. Brophy
TriQuint Semiconductor |
8.7 |
Silicon Oxide PECVD Process Transfer from Reinberg to Shower-Head System |
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J.W. Crites, M.J. Drinkwine, W.F. Polhamus
ITT-GTC |
8.8 |
Miniature Surface Mount Plastic Packages for High Frequency Low Noise Transistors |
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Antoni C. Niedzwiecki, Frank B. Babbit, Jr. Charles R. Baughman, Pagtrick Chye, Jay Dehkordi, Michael Frank
Hewlett-Packard Company |
8.9 |
Planar Doping Level Control of PHEMT Material by Electrochemical Capacitance-Voltage Profiling Technique |
|
X. Du, R.E. Leoni, J.C. M. Hwang, T.L. Hierl
Lehigh University, Quantum Epitaxial Designs, Inc. |
SESSION IX: MANUFACTURING II
Chairs: Malcol Stubbs, Communications Research Centre |
9.1 |
DOE or Statistical Engineering? |
|
Peter D. Shainin
Shainan Consultants, Inc. |
9.2 |
A production FET modeling and library generation system (FLAMBE: Fast Library and Model Building Engine) |
|
Don McGinty, David E. Root, Julio Perdomo |
9.3 |
Plastic Air Cavity Encapsulation Process |
|
Jong Tae Kim, Ki Sung Ham, Chan IK Park
CTI Semiconductor Corporation |
9.4 |
GaAs Cost Drivers and an Approach to Achieving Low Cost Products |
|
T. Cordner
Texas Instruments |
SESSION X: Panel
Chair: Jim Gillespie, Wright Laboratory |
SESSION XI: MATERIALS
Chairs: Thomas Anderson, Airtron |
11.1 |
III-V Manufacturing Material Issues for Wireless Communications |
|
C.W. Farley, D.L. Green, K. Hong, D.J. Halchin
Rockwell Semiconductor Systems |
11.2 |
Comparison of MOCVD and MBE for GaAs-AlGaAs HBT Manufacturing |
|
Dwight C. Sgtreit, Aaron K. Oki, Thomas R. Block, Michael Wojtowicz, Frank Yamada, Matthew M. Hoppe
TRW Electronic Systems and Technology Division |
11.3 |
The Effect of Substrate Parameters on the Growth of P-HEMT Wafers by Molecular Beam Epitaxy |
|
W.E. Quinn, B. Lauterwasser, J. Kronwasser, T. Mirandi, D. Carlson
Ratheon Advanced Device Center, M/A-COM, Inc. |
11.4 |
Indium Precision During the Manufacture of AlGaAs/InGaAs/GaAs p-HEMTs |
|
Forrest Hellert, James Chang, George Patterson
Hewlett-Packard Company |
|
12.1 |
Production Screening for Power Slump Tendency of MESFETs |
|
M.S. Shirokov, R.E. Leoni and J.C. M. Hwang, M. Omori
Hehigh University, Microwave Technology, Inc. |
12.2 |
The Extraction of Projected Operating Lifetime from Accelerated Stressing of a Single Device |
|
Bob Yeats
Hewlett Packard |
