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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2003 On-line Digest Table of Content

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1.1	Four key development vectors for next-generation handset design	Abstract
	David J. Aldrich, Skyworks Solutions Inc.
1.2	A DARPA Perspective on the Future of Electronics	Abstract
	John C. Zolper, DARPA/MTO
1.3	GaAs and SiGec BiCMOS Cost Comparison – Is SiGec Always Cheaper?	Abstract
	Mark Wilson, Motorola Semiconductor Products Sector
2.1	Advance in Compound Semiconductor of China	Abstract
	Qi Huang and Junming Zhou, Institute of Physics, Chinese Academy of Sciences, Advanced Chinese Epitaxy Ltd.
2.2	RF Power Amplifiers for Cellphones	Abstract
	C.E. Weitzel, Motorola, Inc., Semiconductor Products Sector
2.3	Ultra Broadband MEMS Switch on Silicon and GaAs Substrates	Abstract
	Richard Chan, Robert Lesnick, David Caruth, and Milton Feng, High Speed Integrated Circuits Group, Department of Electrical and Computer Engineering, University of Illinois
2.4	Root Cause Analysis and Reduction of Off-State Leakage Current to Increase Manufacturability of a HIGFET Device	Abstract
	J. Hughes, E. Huang, J. Apibunyopas, C. Della-Morrow, T. Nilsson, M. Coe, Motorola Semiconductor Products Sector
3.1	Impact of Substrate Imperfections on Epitaxial Layer Quality	Abstract
	Michael Wojtowicz, Randy Sandhu, Ben Heying, and Thomas Block, Northrop Grumman Space Technology
3.2	Use of Re-etched and Re-polished Epi-wafers for MBE Calibration Substrates	Abstract
	J. Lowmaster, R. Pelzel, M. Dydyk, D. Green, IQE, Inc.,
3.3	Commercial Production of Large Diameter InP-HBT Epiwafers by MBE	Abstract
	D. I. Lubyshev, K. Teker, O. Malis, Y. Wu, J. M. Fastenau, X.-M. Fang, C. Doss, A. B. Cornfeld, and W. K. Liu, IQE Inc.,
3.4	Volume Epitaxial Growth of Enhanced Mode HIGFETs using Minimal Material Characterization and Rapid Inline Processing to Minimize Risk	Abstract
	Michael Pelczynski, Mark Rittgers, Bob Duffin, Celicia Della-Morrow, Mikhail Mikhov*, Motorola Inc. Semiconductor Product Sector
3.5	Active Carbon Control During VGF Growth of Semiinsulating GaAs	Abstract
	T. Bünger, J. Stenzenberger, F. Börner, U. Kretzer, S. Eichler, M. Jurisch, R. Bindemann, B. Weinert, S. Teichert, T. Flade, Freiberger Compound Materials GmbH
4.1	MIM’s the Word – Capacitors for Fun and Profit	Abstract
	Martin J. Brophy, Alfredo Torrejon, Shawn Petersen, Kamal Avala, and Li Liu, TriQuint Semiconductor
4.2	On the Development of High Density Nitrides for MMICs	Abstract
	Y. C. Chou, R. Lai, G. P. Li , H. Guan * , R. Grundbacher, P. Nam, H. K. Kim, Y. Ra ** , M. Barsky, M. Biedenbender, and A. Oki, Northrop Grumman Space Technology
4.3	Development and Characterization of a 600 Å PecVD Si3N4 High-Density MIM Capacitor for InGaP/GaAs HBT Applications	Abstract
	Jiro Yota, Ravi Ramanathan, Jose Arreaga, Peter Dai, Cristian Cismaru, Richard Burton, Parminder Bal, Lance Rushing, Skyworks Solutions, Inc.
4.4	Characteristics of Low-k Film Deposited by Plasma-Enhanced CVD Using a Liquid BCB Source	Abstract
	Suehiro Sugitani, Hideaki Matsuzaki, and Takatomo Enoki, NTT Photonics Laboratories, NTT Corporation
4.5	Metal particle effects on thin film capacitors in high volume manufacturing	Abstract
	Muralidhar R. Rao, Sheila T. O'Neil, Shiban Tiku, Skyworks Solutions Inc.,
4.6	Backside Emission Microscopy Applications In Compound Semiconductor Manufacturing Debug	Abstract
	P. Sanders, H. Henry, D. Hill, M. Sadaka, S. Wilson, Motorola Semiconductor Products Sector
5.1	Compact System-on-Package (SOP) Architectures for low cost RF Front-end modules	Abstract
	J. Laskar, S. Pinel, K. Lim, A. Raghavan, R. Li, C-H. Lee, M. Maeng, M.F. Davis, M. Tentzeris., School of ecE, Georgia Institute of Technology
5.2	Integrated circuits using embedded III-V-on-Ge MHEMTs in multi-layer thin-film technology	Abstract
	R. Vandersmissen 1 , D. Schreurs 1 , S. Vandenberghe 1 , G. Carchon, and G. Borghs 2, IMec, MCP,
5.3	Wafer-Level Assembly of Heterogeneous Technologies	Abstract
	J.-Q. Lu, A. Jindal, P.D. Persans, T.S. Cale, and R.J. Gutmann, Interconnect Focus Center: Interconnections for Gigascale Integration, Rensselaer Polytechnic Institute
5.4	Dense, Two-Dimensional Optoelectronic Chips for High-Speed, Parallel Optical Links	Abstract
	Doug J. Burrows, Kelly A. Zabierek, Richard R. Dennis, Suzanne M. Wade, and Robert W. Cook, TeraConnect, Inc.,
5.5	Power GaInP/GaAs HBTs for High Voltage Operation	Abstract
	P. Kurpas, A. Maaßdorf, W. Doser, W. Köhler, P. Heymann, B. Janke, F. Schnieder, H. Blanck, P. Auxemery, D. Pons, W. Heinrich, J. Würfl, Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH)
6.1	Refractory Gate Metallization Characterization for HIGFET Power Amplifiers	Abstract
	James Cotronakis, Thomas Nilsson, Motorola Compound Semiconductor
6.2	Fabrication and Characterization of Thin Film Resistors for GaAs-Based Power Amplifiers	Abstract
	Hong Shen, Jose Arreaga, Ravi Ramanathan, Heather Knoedler, John Sawyer, and Shiban Tiku, Skyworks Solutions, Inc.,
6.3	NiGeAu Ohmic Contact in InGaP pHEMTs	Abstract
	Ellen Lan, Qianghua Xie, Peter Fejes, and Ha Le, Motorola Inc., Semiconductor Products Sector
6.4	Advances in Gold Metallization at Motorola's Compound Semiconductor Fab (CS1)	Abstract
	Chad M. Becker, William Rummel*, Dr. Paul Ocansey, Motorola Compound Semiconductor
6.5	The Study of Dendrites Formation Mechanism to Enhance Gold Plating Process Yield, Throughput, and Solution Lifetime	Abstract
	S.J. Huang, H.C. Chou, T.C. Lee, B. Lin, D.W. Tu, P.C. Chao, and C.S. Wu, WIN Semiconductors Corporation
7.1	High Voltage Microwave Devices: An Overview	Abstract
	D. Miller and M. Drinkwine, M/A-COM, Inc.
7.2	III-V Compound Semiconductor Industry and Technology Development in Taiwan	Abstract
	Yung S. Liu, Optoelectonics & Systems Laboratories, Industrial Technology Research Institute
7.3	High Speed 0.18µm Ion-implanted GaAs MESFET Process with High Uniformity & Excellent Reproducibility	Abstract
	D. Fukushi, M. Watanabe and S. Nakajima, Optoelectronics R&D Laboratories, Sumitomo Electric Ind., Ltd.
7.4	Deterministic Process Control Using a Multivariate Model	Abstract
	D. Miller, M/A-COM, Inc.
7.5	Trade-off Relationship between Breakdown and Gate-Lag in Recessed-Gate GaAs FETs	Abstract
	Y. Mitani, D. Kasai and K. Horio, Faculty of Systems Engineering, Shibaura Institute of Technology
8.1	Optimization of PHEMT for Microwave Power Applications	Abstract
	T. Baksht, S. Solodky, A. Khramtsov, * S. Hava * and Yoram Shapira, Faculty of Engineering,Tel Aviv University,Ramat Aviv,69978,Israel; Engineering Faculty,Ben-Gurion University of the Negev, Mark Leibovich and Gregory Bunin Gal El (MMIC)
8.2	The First 0.15um MHEMT 6”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations	Abstract
	M. Chertouk, W. D. Chang, C. G. Yuan, H. H. Chen, L. Lo, C. H. Chen, D. W. Tu, J. Liu, N. Draidia, P. C. Chao, WIN Semiconductors Corp.
8.3	High Power Ka – Band PIN Diode Technology	Abstract
	B. Houli-Arbiv, G. Bunin, J. Kaplun, I. Hallakoun, T. Boterashvili, Y. Knafo, A. Cohen-Nov, M. Leibovitch, B. Revzin, Gal-El (MMIC)
8.4	Predictive Modeling of InGaP/GaAs HBT Noise Parameters from DC and S-Parameter Data for Wireless Power Amplifier Design	Abstract
	James Chingwei Li 1 , Peter J. Zampardi 2 , and Van Pho 3, Skyworks Solutions Inc.,
8.5	Phase Formation in Gold-Tin Alloys Electroplated from a Non-cyanide Bath	Abstract
	Yahui Zhang and Douglas G. Ivey, Department of Chemical and Materials Engineering, University of Alberta
8.6	Cycle Time Reduction During Electroplating of Through Wafer Vias For Backside Metallization of III-V Semiconductor Circuits	Abstract
	Dennis Anderson, Heather Knoedler, Shiban Tiku, Skyworks Solutions Inc.,
8.7	Properties, process control, and characterization of PecVD silicon nitrides for compound semiconductor devices	Abstract
	Candi S. Cook,1,2 Terry Daly,1 Ran Liu,1 Michael Canonico,1 Martha Erickson,1 Qianghua Xie,1 Rich Gregory,1 and Stefan Zollner 1
	1 Motorola, Inc., 2 Arizona State University, Science and Engineering of Materials Program
8.8	Characterization and Control of Galvanic Corrosion During GaAs Wafer Photoresist Processing	Abstract
	J. Moore, H. Hendriks, and A. Morales, General Chemical - Electronic Materials, *M/A-COM: Tyco
8.9	Low Damage Dielectric Etching on GaAs Using a Helicon Wave High Density Source	Abstract
	F.S. Pool, W.A. Wohlmuth, E. Maxwell, B. Berggren, S. Roadman, S. Mahon, B. Howell and W. Mickanin, TriQuint Semiconductor
8.1	Improved Plasma Etch Process Control of TiWN Gate Length	Abstract
	Jason Fender, Susan Chorrushi-Patino, Janet Hill-Tinkler, Compound Semiconductor-1 Motorola, Inc.
8.11	Life Tests and TDDB Life Prediction Modeling of 50 nm Silicon Nitride Capacitors	Abstract
	Gergana I. Drandova, John M. Beall, Kenneth D. Decker, Keith A. Salzman, TriQuint Semiconductor
8.12	Process Optimization for 0.5 µm Dual Recess PHEMT Power Amplifiers	Abstract
	Sabyasachi Nayak, Marcus King, Keith Salzman, John Beall, TriQuint Semiconductor Texas
8.13	Comparison of InAlAs/InP Hetero-interface Properties -MBE vs. MOCVD-	Abstract
	Misao Takakusaki, Hajime Momoi, Kouji Kakuta and Hirofumi Nakata, Nikko Materials Co., Ltd.
8.14	Development of High-Gain and High-Efficiency InGaP/GaAs HBT for High-Voltage Operation	Abstract
	Yuefei Yang, Kevin Feng, Byounguk In, Chanh Nguyen, Daniel Hou, Yaochung Chen and Dave Wang, Global Communication Semiconductors, Inc.
8.15	Strength Improvement for the GaAs Thin Wafer	Abstract
	Hiep Pham, Chang-Hwang Hua, Skyworks Solutions, Inc.,
8.16	Smooth, Anisotropic Etching of Indium Containing Multi-layer Structures Using a High Density ICP System	Abstract
	Yao-Sheng Lee, Mike DeVre, David Lishan, Brad Reelfs, Russ Westerman, Unaxis USA, Inc.
8.17	Yield Enhancement Using Final Outgoing Automated Inspection System	Abstract
	Karen Lenaburg, Susan Valocchi, Jan Campbell, Motorola, Semiconductor Products Sector
8.18	A comparison of BCB with Polyimide process in manufacturing HBT devices	Abstract
	June Nguyen, Oksun Dydasco, Harutoshi Saigusa, Chang-Hwang Hua, Skyworks Solutions, Inc.,
8.19	Building Solder Bumps on GaAs Flip Chip Schottky Devices	Abstract
	Prasit Sricharoenchaikit, M/A-COM, Inc.,
8.2	Stress and Other Challenges with Evaporated Ni-Cr Thin Film Resistors Used in the Manufacture of ASICs	Abstract
	Necmi Bilir and Long Do, Skyworks Solutions, Inc.,
8.21	Optical Device Wafer Manufacturing in an IC Foundry	Abstract
	Sam Wang, Guojin Feng, Peter Lao, Sangmin Lee, Sujane Wang, and Chanh Nguyen, Global Communication Semiconductors, Inc.
8.22	Improving process yield by utilizing smart SPC rules	Abstract
	Oded Tal, MAX International Engineering Group
8.23	High Yield Lithography and Wafer Handling Methods for Reliable Backside Processing of Brittle III-V Materials	Abstract
	C. Schaefer 1 , V. Dragoi 1 , S. Farrens 2 , M. Wimplinger , P. Lindner 1, 1 EV Group E. Thallner GmbH, 2 EV Group Inc.,
8.24	An InP/InGaAs SHBT Technology for High-Speed Monolithic Optical Receivers	Abstract
	Shyh-Chiang Shen, David C. Caruth, Doris Chan, Aunt Thu, Jeffrey Feng, and Milton Feng, Xindium Technologies, Inc.
8.25	Advanced Commercial InP HBT IC Process	Abstract
	N. X. Nguyen, J. Fierro, K. T. Feng, and C. Nguyen, Global Communication Semiconductors, Inc.
8.26	Improved characterization of diffusion in ohmic contacts using Backside SIMS	Abstract
	Patrick Van Lierde, Chunsheng Tian, Charles Evans & Associates
10.1	New Manufacturing Concepts for Ultra-Thin Silicon and Gallium Arsenide Substrates	Abstract
	K. Bock, M. Bleier, O. Köthe, C. Landesberger, Fraunhofer Institute for Reliability and Microintegration IZM-M, Munich branch of the institute,
10.2	A Novel Backside Process to Achieve 1-mil Thick Wafers at 6-inch Foundry	Abstract
	H.C. Chou, T.C. Lee, S.J. Huang, H.H. Weng, M.H. Tsai, J.M. Lee, M. Chertouk, D.W. Tu, P.C. Chao, and C.S. Wu, WIN Semiconductors Corporation
10.3	Impact of Backside Via Dimension Changes on High Frequency GaAs MMIC Circuit Performance	Abstract
	P. Nam, R. Tsai, D. Davison, B. Allen, M. Barsky, R. Grundbacher, R. Lai and S. Olson, Northrop Grumman Space Technology
10.4	Dry Etching of Deep Backside Vias in InP	Abstract
	Maria Huffman 1, Timothy Engel 1, Nicholas Pfister 1, Gabriel Arevalo 1, Tom Brown 1, Maya Farhoud 1, Ron Miller 1, Ben Keppeler 1, John Staroba 1, Richard Jefferies 2 ., 1 Agilent Technologies Inc., 2 Trikon Technologies Ltd.,
10.5	Eliminating Pillars During GaAs Via Etch Formation	Abstract
	R. Westerman 1 , D. Johnson 1 , F. Clayton 2, Unaxis USA, Inc., Motorola Inc.,
10.6	Optimization of Metal Adhesion for GaAs Backside Wafer Processing	Abstract
	Terry Daly, Jason Fender, Bob Duffin, Mike Kottke, Compound Semiconductor-1 Motorola, Inc.
11.1	Activities of Indium Phosphide in Japan	Abstract
	Yasuyuk i Miyamoto, Department of Physical Electronics, Tokyo Institute of Technology
11.2	The Emergence of SiGe:C HBT Technology for RF Applications	Abstract
	V. Ilderem, S.G. Thomas, J.P. John, S. Wipf, D. Zupac, H. Rueda, F. Chai, R. Reuter, J. Kirchgessner, J.Teplik, P. Wennekers, T. Baker, M. Clifford, J. Griffiths, M. Tawney, M. McCombs, Digital DNA TM Laboratories, Semiconductor Products Sector, *EMEA-Berlin, Motorola Inc,
11.3	Investigation of stressing InP/InGaAs DHBTs under high current density	Abstract
	V.E. Houtsma, J. Frackoviak, R.F. Kopf, R.R. Reyes, W. Sung, A. Tate, Y. Yang, N.G. Weimann, and Y.K. Chen, Bell Labs, Lucent Technologies
11.4	GaInP/GaInAsN/GaAs N-p-N Bipolar Transistors: Influence of Base Layer Composition and Alloy Grading on Device Performance	Abstract
	Bryan D. Dickerson, Bradley J. Heath, and Louis J. Guido, Virginia Tech, Department of Material Science and Engineering,
	Kevin S. Stevens, Charles R. Lutz, Eric M. Rehder, and Roger E. Welser, Kopin Corporation,
12.1	In-Line Defectivity Methodology for a GaAs Manufacturing Facility	Abstract
	Jan Campbell, Karen Lenaburg, Niki Liggins, Motorola, Semiconductor Product Sector
12.2	High uniformity, highly reproducible non-selective wet gate recess etch process for InP HEMTs	Abstract
	Xin Cao, Iain Thayne, Ultrafast Systems Group, Department of Electronics and Electrical Engineering, University of Glasgow
12.3	A High Performance and High Yield Self-Aligned and Double Recessed pHEMT Process with One Lithography Step for Both Gate and First Recess Definition	Abstract
	Kamal Tabatabaie-Alavi, Colin Whelan, and Elsa Tong, Raytheon RF Components Company
12.4	Electrophoretic Photoresist Application for High Topography Wafer Surfaces	Abstract
	James Tajadod, Henry Hendriks, John Klocke*, Antonio Morales, and Heather Rapuano, M/A-COM: Tyco
12.5	Advances in CPL, Collimated Plasma Source & Full Field Exposure for Sub-100nm Lithography	Abstract
	Brent Boerger, Scott Mcleod, Richard Forber, I.C.E. Turcu, Cel Gaeta, Donald K. Bailey, Jacob Ben-Jacob, JMAR Systems
13.1	Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs	Abstract
	A. Crespo, R. Fitch, J. Gillespie, N. Moser, G. Via, M. Yannuzzi, Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB
13.2	AlGaN/GaN HEMTs on Silicon Carbide Substrates for Microwave Power Operation	Abstract
	Richard Lossy 1, Nidhi Chaturvedi 1 , Peter Heymann 1, Klaus Köhler 2, Stefan Müller 2 and Joachim Würfl , 1 Ferdinand-Braun-Institut für Höchstfrequenztechnik
13.3	GaN-HEMT on 100mm Diameter Sapphire Substrate Grown by MOVPE	Abstract
	Yohei Otoki, Michio Kihara, Takeshi Tanaka, Kazuto Takano, Toshihide Kikkawa and *Tsutomu Igarashi, Semiconductor Engineering Dept., Hitachi Cable, Advanced Research Center, Hitachi Cable, Fujitsu Laboratories Ltd, *Fujitsu Quantum Devices Ltd.
13.4	Transition of High Power SiC MESFETs from 2-inch to 3-inch Production for Improved Cost and Producibility	Abstract
	J.W. Milligan, S.T. Allen, J.J. Sumakeris, A.R. Powell, J.R. Jenny, and J.W. Palmour, Cree, Inc.,
13.5	Solid-State Lighting: Lamp Targets and Implications for the Semiconductor Chip	Abstract
	Jeff Y. Tsao, Sandia National Laboratories