GaAs ManTech On-Line Digest Search


search engine by freefind	advanced


search engine by freefind	advanced

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2006 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form,
or contact Margaret Doyle at mdoyle@gaasmantech.org

	Full document in PDF format	View
1.A	Compound Semiconductors Benchmark Study	Abstract
	Oded Tal, Ariel Meyuhas, MAX International Engineering Group
1.B	Future Trends for Microwave Compound Semiconductors in Military Systems	Abstract
	John Zingaro, Northrop Grumman ES
1.C	China’s Compound Semiconductor Industry: The Impact on Global Manufacturing	Abstract
	Robert Walker, eLite Optoelectroics, Inc., YEBY Associates, LLC
2.A	Semiconductor Innovation and Integration for Next-Generation 3G Multimedia Devices	Abstract
	Brian Daly, Skyworks Solutions, Inc
2.B	Release for Production of a 150 GHz, 125nm Gate 40% In Metamorphic GaAs HEMT MMIC Process	Abstract
	J. Bellaïche, P. Baudet, S. Demichel, M. Renvoisé, H. Maher, J. F. Pautrat, M. G Périchaud, S. Lafont, OMMIC
2.C	The First 0.1mm 6” GaAs PHEMT MMIC Process	Abstract
	L. Gunter, D. Dugas, S. Yang, P. Seekell, M. Gerlach, J. Diaz, J. Lombardi, W. Hu, P.C. Chao, K. Nichols, W. Kong, B. Golja and K.H.G. Duh, BAE Systems
2.D	The Manufacture of Optical Components on 4-inch InP in a GaAs Production Fab	Abstract
	C. Youtsey, E. Beam, T. Chou, J. Jimenez, A. Ketterson, A. MacInnes, A. Mahajan, P. Saunier, D. Wohlert, TriQuint Semiconductor
2.E	The Effective Use of Process Control Plans and Process Failure Mode Effects Analys in a GaAs Semiconductor Manufacturing Environment	Abstract
	Daniel J. Le Saux, Skyworks Solutions, Inc.
3.A	Wide-Bandgap Semiconductor Devices for Automobile Applications	Abstract
	H. Ueda1, M. Sugimoto2, T. Uesugi1, and T. Kachi1, 1Toyota Central R&D Lab, Inc., 2Toyota Motor Corp.
3.B	Preliminary Results from Phase II of the Wide Bandgap Semiconductor for RF Applications (WBGS-RF) Program	Abstract
	Mark Rosker1, Harry Dietrich2, Chris Bozada4, Alfred Hung3, and Glen David Via4, 1Defense Advanced Research Projects Agency / Microsystems Technology Office , 2Office of Naval Research, 3Army Research Laboratory, 4Air Force Research Laboratory
3.C	Development of AlGaN/GaN High Power and High Frequency HFETs under NEDO's Japanese National Project	Abstract
	Yasushi Nanishi1, H. Miyamoto2, A. Suzuki1, H. Okumura3, and N. Shibata2, 1Ritsumeikan University, 2R&D Association for Future Electron Devices, 3National Institute of Advanced Industrial Science and Technology
3.D	KORRIGAN: Development of GaN HEMT Technology in Europe	Abstract
	G. Gauthier1, Francois Reptin2, 1Thales Airborne Systems, 2DGA/DET/PCO
4.A	The SEMI International Standards Program – History, Successes and Lessons Learned to Address Compound Semiconductor Manufacturing Challenges	Abstract
	Bettina Weiss, SEMI
4.B	White Light Interferometry – A Production Worthy Technique for Measuring Surface Roughness on Semiconductor Wafers	Abstract
	Roy T. Blunt, IQE (Europe) Ltd.
4.C	Overcoming Difficulties in Photoreflectance Measurements on Product HBTS	Abstract
	E.M. Rehder, P. Rice, K.S. Stevens. C. R. Lutz, Kopin Corp.
4.D	An Overview of Gallium Nitride Substrate Materials Developments for Optoelectronic and Microelectronic Applications	Abstract
	A. D. Hanser1, L. Liu1, E. A. Preble1, D. Tsvetkov1, M. Tutor1, N. M. Williams1, K. Evans1, Y. Zhou2, D. Wang2, C. Ahyi2, C.-C. Tin2, J. Williams2, M. Park2, D. F. Storm3, D. S. Katzer3, S. C. Binari3, 1Kyma Technologies, Inc., 2Auburn University, 3Naval Research Laboratory
4.E	Recent Achievement of the SopSiC Substrates for High Power and High Frequency Applications	Abstract
	R. Langer1, B. Faure2, A. Boussagol2, P. Bove1, H. Lahreche1, A. Wilk1, J. Thuret1, F. Letertre2, 1Picogiga International, 2Soitec
5.A	Perfect Quality for Free?!	Abstract
	Nien-Tsu Shen, Skyworks Solutions, Inc.
5.B	Statistical Quality Control of Wafer Level DC Die Sort Test	Abstract
	Y. Z. Wang, R. S. Persaud, R. C. Salvador and D. J. Troy, Anadigics, Inc
5.C	SiN Capacitors and ESD	Abstract
	Gergana I. Drandova, John M. Beall, Kenneth D. Decker, TriQuint Semiconductor
5.D	The Reliability Study of MIM Capacitor Built On Top of Backside Via In III-V Compound MMIC	Abstract
	X. Zeng, M. Barsky, J. Uyeda, D. Farkas, F. Yamada, M. Biendenbender, D. Eng, J. Wang, R. Lai, Northrop Grumman ST
5.E	Lifetime of SiN Capacitors Determined from Ramped Voltage and Constant Voltage Testing	Abstract
	H. C. Cramer, J. D. Oliver, R. J. Porter, Northrop Grumman ES
6.A	3.3fF/mm2 40V BST MIM Capacitor Suitable for Above MMIC Integration	Abstract
	Satoshi Horiuchi, Katsuji Matsumoto, Mariko Sakachi, Tsuyoshi Ooki, Hideko Nakamura, Kiwamu Adachi, Mamoru Shinohara, Sony Corp.
6.B	High Value Thin Film Resistor for GaAs IC Manufacturing	Abstract
	Fabian Radulescu1, Jinhong Yang1, Paul Miller1, Ron Herring1, Chi-Fung Lo2, Wolfgang Liebl3, 1TriQuint Semiconductor, 2Praxair Surface Technology-MRC, 3Infineon Technologies AG
6.C	Comparison of Different GaN Etching Techniques	Abstract
	Lei Ma, K. Fareen Adeni, Chang Zeng, Yawei Jin, Krishnanshu Dandu, Yoganand Saripalli, Mark Johnson, Doug Barlage, North Carolina State University
6.D	Bias Annealing Behavior of Plasma-Induced Defects in n-GaN Exposed to Plasma	Abstract
	S. Nakamura, M. Suda, M. Suhara, and T. Okumura, Tokyo Metropolitan University
7.A	Status and Progress in InP Optoelectronic Processing: Towards Higher Levels of Integration	Abstract
	Jacco L. Pleumeekers, Richard P. Schneider, Jr., Atul Mathur, Sheila K. Hurtt, Peter W. Evans, Andrew G. Dentai, Charles H. Joyner, Damien J. H. Lambert, Sanjeev Murthy, Ranjani Muthiah, Johan Baeck, Mark J. Missey, Randal A. Salvatore, Mehrdad Ziari, Masaki Kato, Radhakrishnan Nagarajan, Fred A. Kish, Infinera Corp.
7.B	Compound Semiconductor MOSFET With High-k Dielectric	Abstract
	Karthik Rajagopalan, Ravi Droopad, Jon Abrokwah, and Matthias Passlack, Freescale Semiconductor
7.C	A Flip-chip Low Band Harmonic Filter Based on GaAs Integrated Passives	Abstract
	Jon Abrokwah, Sergio Pacheco, Shun-Meen Kuo, Li Li, Robert Bettiga, Philip Bowles, Gilles Montoriol, Freescale Semiconductor
7.D	27 GHz Flip-Chip Assembled pHEMT Oscillator	Abstract
	Yue-ming Hsin1, Yu-An Liu1, Che-ming Wang1, Wei-kuo Huang1, Tsung-Jung Yeh2, 1Taiwan National Central University, 2WIN Semiconductor
8.A	Reduction of Chlorinated Solvents in GaAs Manufacturing	Abstract
	Victoria Williams, Harold Isom, Thomas Nagle, Cary
	Sellers, Sean Hillyard, Samuel Roadman, Sumir Varma, TriQuint Semiconductor
8.B	Reduction of Platinum Metal Usage in GaAs IC Metallization	Abstract
	L. Luu-Henderson, L. Rushing, and S. Tiku, Skyworks Solutions, Inc.
8.C	Significant Step in Wafer Yield Optimization and Operation Cost Reduction Due to Dicing Innovation	Abstract
	Mark Müller, Rene Hendriks, H. P. Chall, Advanced Laser Separation International
8.D	Damage-Free Dicing of SiC Wafers by Wafer-Jet-Guided Laser	Abstract
	Sean Green, Delphine Perrottet, Bernold Richerzhagen, Synova-SA
9.A	A High Yield Manufacturable BiFET Epitaxial Profile and Process for High Volume Production	Abstract
	Mike Sun1, Pete Zampardi1, R. Ramanathan1, A.G. Metzger1, C. Cismaru1, Vincent Ho1, L Rushing1, K S. Stevens2, M. Chaplin2, R. E. Welser2, 1Skyworks Solutions, Inc., 2Kopin Corp.
9.B	InGaP-Plus™: A Low Cost Manufacturable GaAs BiFET Process Technology	Abstract
	Mohsen Shokrani, Kezhou Xie, Boris Gedzberg, Wojciech Krystek, Prabhu Mushini, Aditya Gupta, Pat Fowler, William Peatman, Anadigics, Inc.
9.C	High Performance Metamorphic InP/GaAsSb/InP "Type-II" DHBTs Grown on GaAs Substrates	Abstract
	Y. Zeng1, H. G. Liu1, N. G. Tao1, C. R. Bolognesi1, W. Tang2, W. Zhou2, K. M. Lau2, 1Simon Fraser University, 2Hong-Kong University of Science and Technology
9.D	Investigation of Base-Collector Parasitics for Various Emitter and Base Geometries in GaAsSb/InP Type-II DHBTs	Abstract
	Benjamin F. Chu-Kung1, Shyh-Chiang Shen2, William Snodgrass1, and Milton Feng1, 1University of Illinois Department of ECE, 2Georgia Institute of Technology
12.A	Recent Progress of Highly Reliable GaN-HEMT for Mass Production	Abstract
	Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin, Fujitsu Laboratories Ltd.
12.B	High-Efficiency Amplifiers Using AlGaN/GaN HEMTs on SiC	Abstract
	Scott Sheppard, Bill Pribble, R. Peter Smith, Adam Saxler, Scott Allen, Jim Milligan, and Ray Pengelly, Cree Inc.
12.C	Combined Infrared and Raman Temperature Measurements on Device Structures	Abstract
	A. Sarua1, Hangfeng Ji1, M. Kuball1, M.J. Uren2, T. Martin2, K. P. Hilton2, R. S. Balmer2, 1University of Bristol, 2QinetiQ, Ltd
12.D	Mass-Production of High-Voltage GaAs and GaN Devices	Abstract
	Eizo Mitani, Hitoshi Haematsu, Shigeru Yokogawa, Junichiro Nikaido, and Yasunori Tateno, Eudyna Devices Inc.
12.E	An Ion-Implanted GaAs MESFET Process for 28V S-Band MMIC Applications	Abstract
	M. J. Drinkwine, T. Winslow, D. Miller, D. Conway, B. Raymond, M/A-COM, Inc.
13.A	Reversible Wafer Bonding; Challenges in Ramping up 150mm GaAs Wafer Production to Meet Growing Demand	Abstract
	Suzanne Combe, John Cullen, Matthew O’Keefe, Filtronics ICS
13.B	Defect Reduction in Through Wafer Via Photolithography Processing	Abstract
	J. Riege, T. Nguyen, H. Knoedler, B. Darley, R. Clark, N. Ebrahimi, S. Mony, S. Tiku, Skyworks Solutions, Inc.
13.C	Improvements in the Process for Electrodeposition of Au-Sn Alloys	Abstract
	Nasim Morawej1, Douglas G. Ivey1, and Siamak Akhlaghi2, 1University of Alberta, 2Micralyne Inc.
13.D	Substrate Via Etch Profile Optimization Using RIE and Wet Etch Processes	Abstract
	S. E. Roadman, C. Youtsey, C. Sellers, and H. S. Isom, TriQuint Semiconductor
13.E	Development of Backside Process for Use with Solder Paste Die Attach	Abstract
	Jason Fender and Terry Daly, Freescale Semiconductor
14.A	Status of SiC Power Devices and Manufacturing Issues	Abstract
	Anant Agarwal and Sei-Hyung Ryu, Cree Inc.
14.B	High-Yield Silicon Carbide Vertical Junction Field Effect Transistor Manufacturing for RF and Power Applications	Abstract
	Victor Veliadis, Li-Shu Chen, Megan McCoy, Ty McNutt, Eric Stewart, Robert Sadler, Alfred Morse, Steve Van Campen, Chris Clarke, Gregory DeSalvo, Northrop Grumman ES
14.C	Technology Development of 4H-SiC RF BJTs with 5GHz fmax	Abstract
	Bart Van Zeghbroeck1,2, Ivan Perez2, Feng Zhao1,2 and John Torvik2, 1University of Colorado, 2Advanced Power Technology
14.D	AlGaN/GaN MIS HEMT with AlN Dielectric	Abstract
	Chen Tangsheng, Jiao Gang, Li Zhonghui, Li Fuxiao, Shao Kai, Yang Naibin, Nanjing Electronic Devices Institute
14.E	SiC, Sapphire, and GaN Materials Status into Opto and RF Businesses	Abstract
	Philippe Roussel, Yole Developpement
15.A	Low Power High-Speed Circuits with InAs-based HBT Technology	Abstract
	C. Monier, A. Cavus, R. S. Sandhu, A. Oshiro, D. Li, E. Kaneshiro, D. Matheson, B. Chan, and A. Gutierrez-Aitken, Northrop Grumman ST
15.B	An Ultra-Low Power InAs/AlSb HEMT X-Band Low-Noise Amplifier and RF Switch	Abstract
	Jonathan B. Hacker1, Joshua Bergman1, Gabor Nagy1, Gerard Sullivan1, C. Kadow2, H.-K. Lin2, A. C. Gossard2, Mark Rodwell2, B. Brar1, 1Rockwell Scientific, 2UC Santa Barbara
15.C	MOCVD Grown Metamorphic InAlAs/InGaAs HEMTs on GaAs Substrates	Abstract
	Chak-wah Tang, Jiang Li, Kei May Lau, Kevin J. Chen, Hong Kong University of Science and Technology
15.D	Temperature Dependence of InGaP/InGaAs/GaAs pHEMTs	Abstract
	Man Ni1, P. Fay1, N. Pan2, 1University of Notre Dame, 2MicroLink Devices
15.E	Beyond CMOS: Logic Suitability of In0.7Ga0.3As HEMT	Abstract
	Dae-Hyun Kim and Jesús A. del Alamo, Massachusetts Institute of Technology (MIT)
16.A	Visual and Electric Ohmic Metal Degradation from Later Process Steps	Abstract
	Thorsten Saeger, Tertius Rivers, Dorothy Hamada, Fabian Radulescu, Corey Jordan, Martin J. Brophy, TriQuint Semiconductor
16.B	InP/InGaAs DHBT Large Signal Model for Nonlinearity Harmonic Predictions in ICs	Abstract
	Yu-Ju Chuang1, J. W. Lai1, Kurt Cimino1, Milton Feng1, Minh Le2, Raymond Milano2, R.. B. Elder3, Frank Strolli3, 1Dept of ECE Univ of Illinois, 2Vitesse Semiconductor, 3BAE Systems
16.C	SEMI Standardization Efforts in Compound Semiconductors	Abstract
	James D. Oliver1 and Russ Kremer2, 1Northrop Grumman ES, 2Freiberger USA
16.D	A Chemical and Thermal Resistant Wafer Bonding Adhesive Simplifying Wafer Backside Processing	Abstract
	A. Smith1, J. Moore2, and B. Hosse3, Brewer Science, Inc., 2DAETEC, LLC, 3RF Micro Devices
16.F	Defect Formation in GaN Introduced During Plasma Processing	Abstract
	S. Nakamura, M. Suda, M. Suhara, and T. Okumura, Tokyo Metropolitan University
16.G	Determining Inductor Interactions with a Design of Experiment	Abstract
	M. Meeder, M. Fresina, D. Limanto, M. Tenberge, W. Wohlmuth, Y. Tretiakov, and K. Sheek, RF Micro Devices
16.H	Manufacture of Mesa-Type and Air-Bridge Gate In0.5Al0.5As/In0.5Ga0.5As Metamorphic High Electron Mobility Transistors (MHEMTs) with InxAl1-xAs Graded Buffer Layers	Abstract
	M. K. Hsu1, H. R. Chen2, W. T. Chen1, G. H. Chen1, C. C. Su2, and W. S. Lour1, 1National Taiwan Ocean University, 2National University of Kaohsiung
16.I	Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications	Abstract
	Aroonchat Chatchaikarn1, Wing Yau2, Yuefei Yang2, and G. P. Li1, 1UC Irvine, 2GCS, Inc.
16.J	Highly Reliable GaAs Planar Airbridged Schottky Diodes for Flight Qualified Millimeter-wave Circuits	Abstract
	Hooman Kazemi, Lan Tran, Don Deakin, Jon B. Hacker, Chanh Nguyen, Rockwell Scientific
16.K	Ensuring High Yield and Good Reliability for Mass-Produced High-Performance HallEffect Sensors	Abstract
	V. Mosser1, A. Kerlain1, Y. Haddab1, R. Morton2, Martin J. Brophy2, 1Itron, Inc., 2TriQuint Semiconductor