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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2007 On-line Digest Table of Contents

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01a	State of the Compound Semiconductor Industry A Focus on Communications	Abstract
	Ralph Quinsey CEO TriQuint Semiconductor
01b	GaAs Industry in Europe – Technologies, Trends and New Developments	Abstract
	Wolfgang Bösch CTO Filtronic IP, Shipley UK,
01c	Overview of EMCORE’s Multi-junction Solar Cell Technology and High Volume Manufacturing Capabilities	Abstract
	David Danzilio EMCORE Photovoltaics
01d	Bulk Acoustic Wave Devices – Why, How, and Where They are Going	Abstract
	Steven Mahon and Robert Aigner,TriQuint Semiconductor
02a	Process Considerations for Manufacturing 50 μm Thinned III-V Wafers	Abstract
	G. Cobb, H. Isom, C. Sellers , V. Williams TriQuint Semiconductor
02b	FFT (Flow Free Thin) Mold Study for 44um Fine Pitch Device Application	Abstract
	J.M. Liu, Y.S. Lu, X.S. Pang Wireless Packaging System Laboratory, Technology Solutions Organization, Freescale Semiconductor (China) Ltd.
02c	High Temperature–Resistant Spin-On Adhesive for Temporary Wafer Mounting Using an Automated High-Throughput Tooling Solution	Abstract
	A. Smith, R. Puligadda, W. Hong,T. Matthias, C. Brubaker, M. Wimplinger, and S. Pargfrieder
	Brewer Science, Inc., EV Group Inc.,
02d	Carrier techniques for thin wafer processing	Abstract
	C. Landesberger, S. Scherbaum, K. Bock Fraunhofer Institute for Reliability and Microintegration IZM
03a	Mechanisms of Premature HEMT Breakdown	Abstract
	L. Gunter, W. Zhu, J. Hulse, J. Diaz, P. Seekell, W. Kong, K. Nichols, P.C. Chao BAE Systems
03b	THE ROLE OF SUBSTRATE DISLOCATIONS IN CAUSING INFANT FAILURES IN HIGH COMPLEXITY InGaP/GaAs HBT ICs	Abstract
	T. S. Low, K. W. Alt, R. E. Yeats, C. P. Hutchinson, D. K. Kuhn, M. Iwamoto, M. E. Adamski, R. L. Shimon, T. E. Shirley, M. Bonse, F. G. Kellert, and D. C. D’Avanzo
	A. Wibowo, S. Hassler, N. Pan, G. Hillier, and Hani Badawi, Morris Young, Weiguo Liu Agilent Technologies, Inc. MicroLink Devices, Inc. www.mldevices.com
	AXT, Inc. www.axt.com ,
03c	On Wafer Reliability Test Bench for PHEMT and HBT Technologies	Abstract
	F. Bourgeois, M. Lanz, G.Jonsson, H. Stieglauer and D. Behammer, United Monolithic Semiconductors
03d	Study on effect of fabrication process on TDDB lifetime of MIM capacitor	Abstract
	Eudyna Devices Inc., T.Kagiyama, Tosaka, R. Yamabi, and H. Yano
03e	Reliability of High-Speed Devices: Probing of Self-Heating with Nanosecond Time-Resolution	Abstract
	M. Kuball, G.J. Riedel, J.W. Pomeroy, R. Simms, A. Sarua, M.J. Uren, T. Martin, K.P. Hilton, J.O. Maclean, and D.J. Wallis, H.H. Wills Physics Laboratory, University of Bristol, QinetiQ Ltd
04a	High-Efficiency and Low-Noise AlGaN/GaN HEMTs for K-and Ka-Band Applications	Abstract
	Ming-Yih Kao, Cathy Lee, Paul Saunier, Hua-Quen Tserng and Gary Christison, TriQuint Semiconductor
04b	A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model	Abstract
	Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois
04c	HfO2-based Metal-Oxide-Semiconductor Capacitors on n-InGaAs Substrate with a Thin Germanium Passivation Layer	Abstract
	Hyoung-Sub Kim, I.Ok, M. Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikov, W. Tsai, V. Tokranov, M.Yakimov, S. Oktyabrsky, and Jack C. Lee. Intel Corporation, The University at albany-SUNY, The University of Texas Austin
04d	Realization of InAlN/GaN Unstrained HEMTs on SiC Substrates with a 75 Å Barrier Layer	Abstract
	J. K. Gillespie, G. H. Jessen, G. D. Via, A. Crespo, and D. Langley Sensors Directorate, Air Force Research Laboratory Wright-Patterson Air Force Base, M. E. Aumer, H. G. Henry, D. B. Thomson, and D. P. Partlow Northrop Grumman Electronic Systems
04e	High Frequency Noise Characterization and Modeling of InGaP/GaAs SHBTs	Abstract
	Benjamin F. Chu-Kung, Kurt Cimino, Yu-Ju Chuang, Mark Stuenkel, and Milton Feng Department of Electrical and Computer Engineering · University of Illinois Micro and Nanotechnology Laboratory,A. Wibowo, G. Hillier, and N. Pan Microlink Devices
05a	Qualification and Reliability of a GaN Process Platform	Abstract
	S. Singhal, A.W. Hanson, A. Chaudhari, P. Rajagopal, T. Li, J.W. Johnson, W. Nagy, R. Therrien, C. Park, A.P. Edwards, E.L. Piner, K.J. Linthicum, I.C. Kizilyalli Nitronex Corporation
05b	Reliability Study of AlGaN/GaN HEMTs Device	Abstract
	K. Matsushita, S. Teramoto, H. Sakurai, Y. Takada, J. Shim, H. Kawasaki, K. Tsuda and K. Takagi, Microwave Solid-state Department Toshiba Corp., Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp
05c	Trap Analysis of GaN-Insulated-gatge-HEMT for High Reliability	Abstract
	Toshihide Kikkawa, Masahito Kanamura, toshihiroOhki, Kenji Imanishi,Kozo Makiyama, Naoya Okamoto, Naoki Hara and Kazukiyo Joshin, Fujitsu Limited and Fujitsu Laboratories Ltd.
05d	Leakage Current Screening for AlGaN/GaN HEMT Mass-Procuction	Abstract
	F. Yamaki, K. Ishii, M.Nishi, H. Haematsu, Y. tateno and H. Kawata, Eduyna Devices Inc
05e	Failure Mechanisms in GaN HFETs under Accelerated RF Stress	Abstract
	A.M. Conway, M. Chen, P. Hashimoto, P.J. Willadsen, and M. Micovic, HRL Laboratories, LLC
06a	Improvement of Base Ideality through Improved Surface Cleans	Abstract
	Terry Daly, Jason Fender, Agni Mitra, Matt Parker, Darrell Hill, and Adolfo Reyes, Freescale Semiconductor, Inc.
06b	Surface Preparation Study in GaAs HBT Process	Abstract
	Y. Recsei, C. Luo, S. Tiku, P. Zampardi, Skyworks Solutions,
06c	Atomic Hydrogen Cleaning of Epiready InSb (100), (111)B, and GCIB Processed InSb (111)B Surfaces	Abstract
	S. R. Vangala, H. Dauplaise, C. Santeufemio, C. Lynch, P. Alcorn, L.P. Allen, G. Dallas, K. Vaccaro, D. Bliss, and W. D. Goodhue, University of Massachusetts, Air Force Research Laboratories, Hanscom/SNHC AFB, Galaxy Compound Semiconductors, Inc.,
06d	High-density Plasma Etching of RF-Sputtered Indium-Zinc-Oxide Films in Ar, Ar/Cl2, and Ar/CH4/H2 Chemistries	Abstract
	R. Khanna(1)*, W.T. Lim, L. Stafford, S.J. Pearton, Jae-Soung Park, Ju-Il Song, Young-Woo Heo, Joon-Hyung Lee, and Jeong-Joo Kim, Department of Materials Science and Engineering, University of Florida, Kyungpook National University
07a	Vertical-HVPE as a Production Method for Free-Standing GaN-Substrates	Abstract
	B. Schineller, J. Kaeppeler, M. Heuken , AIXTRON AG,
07b	Large Area Single Crystal Diamond Wafers; Applications, Status, and Future Perspectives	Abstract
	P. Doering, A. Genis, and R. Linares Apollo Diamond, Inc.,
07c	GaN on SOD Substrates – The Next Step in Thermal Control	Abstract
	J. Zimmer and G. Chandler sp3 Diamond Technologies Inc.,
07d	GaN-HEMT Epilayers on Diamond Substrates: Recent Progress	Abstract
	D. Francis¹, J. Wasserbauer¹, F. Faili¹, D. Babić¹, F. Ejeckam¹, W. Hong², P. Specht², E. Weber² ¹Group4 Labs, LLC, 1600 Adams Dr., Menlo Park, CA 95025; daniel_francis@group4labs.com, (650) 688 5760 ²Department of Materials Science and Engineering, University of California, Berkeley
07e	AlGaN/GaN High Electron Mobility Transistors and Diodes Fabricated on Large Area Silicon on poly-SiC (SopSiC) Substrates for Lower Cost and Higher Yield	Abstract
	T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, S. J. Pearton, J.Kim, J. Lin, P. Bove, H. Lahreche , J. Thuret and R. Langer, Department of Chemical Engineering, University of Florida, Picogiga International SAS
08a	MMIC Packaging and Heterogeneous Integration Using Wafer-Scale Assembly	Abstract
	P. Chang-Chien, X. Zeng, K. Tornquist, M. Nishimoto, M. Battung, Y. Chung, J. Yang, D. Farkas, M. Yajima, C. Cheung, K. Luo, D. Eaves, J. Lee, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology
08b	Development of Simple Electrolytes for the Electrodeposition and Electrophoretic Deposition of Pb-free, Sn-based Alloy Solder Films	Abstract
	Chunfen Han*, Qi Liu and Douglas G. Ivey Department of Chemical and Materials Engineering, University of Alberta
08c	High Yield Intra-Cavity Interconnection Fabrication Method And Characterization Methodologies	Abstract
	M. Yajima, P. Chang-Chien, X. Zeng, K. Luo, C. Cheung, K. Tornquist, and M. Barsky, Northrop Grumman Space Technology
08d	Development of a Lead Free Solder Bumped RFIC Switch Process	Abstract
	Suzanne Combe, John S Atherton, Matthew F O’Keefe, Chris Main Filtronic IP
08e	Development of Backside Process for Alternative Die Attach on HBT	Abstract
	Jason Fender, Terry Daly, Darrell Hill, Lakshmi Ramanathan, Philip Bowles, Neil Tracht, Freescale Semiconductor, Inc.
09a	Influence of the Epitaxy on the Sub-Threshold Drain Leakage Current and the Breakdown Voltage for GaAs pHEMTs	Abstract
	P. Abele, F. Bourgeois, J. Splettstoesser, and D. Behammer United Monolithic Semiconductors
09b	Gain Enhancement of Junction PHEMT Power Amplifiers for Cellular Phones	Abstract
	Kazuki Nomoto, Koichi Hirata, and Mitsuhiro Nakamura, MMIC Development Section, LSI Device Engineering Department, Sony Semiconductor Kyushu Corporation
09c	High Voltage GaAs pHEMT Technology for S-band High Power Amplifiers	Abstract
	David Fanning, Anthony Balistreri, Edward Beam III, Kenneth Decker, Steve Evans,
	Robert Eye, Warren Gaiewski, Thomas Nagle, Paul Saunier, Hua-Quen Tserng, TriQuint Semiconductor
09d	Development of High Breakdown Voltage InGaP/GaAs DHBTs	Abstract
	Jiang Li, Cristian Cismaru, Pete Zampardi, Andy Wu, Eugene Babcock, Mike Sun, Kevin Stevens, and Ravi Ramanathan, Skyworks Solutions, Inc., Kopin Corporation
09e	Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications	Abstract
	H. Blanck, G. Jonsson, L. Favede, G. Pataut, M. Bonnet, D. Floriot, United Monolithic Semiconductors GmbH
10a	0.10 µm Ion-Implanted GaAs MESFETs with Low Cost Production Process	Abstract
	M. Watanabe, D. Fukushi, H. Yano, and S. Nakajima, Eudyna devices Inc.
10b	pHEMT Gate Formation Using a Dielectrically Defined Gate with No Plasma Damage	Abstract
	M. Wayne Pickens, John W. L. Dilley, Brook D. Raymond, Tyco Electronics, Commercial Product Solutions
10c	Planarization Process for Transparent Polyimide Coatings to Reduce Topography and Overburden Variation	Abstract
	Wu-Sheng Shih1, Jiro Yota2, Hoa Ly2, Ketan Itchhaporia1, and Alex Smith, Brewer Science, Inc., Skyworks Solutions, Inc.,
10d	Low-Cost, High-Performance Multifunction X-band Control MMICs Using Ion- Implanted FET Technology	Abstract
	Monte Drinkwine, Hausila Singh and Mike Ashman,M/A-COM, Inc.,
10e	Transfer Printed Heterogeneous Integrated Circuits	Abstract
	Etienne Menard, Christopher A. Bowe, Joseph Carr and John A. Rogers, Semprius, Inc., Beckman Institute for Advanced Science and technology, University of Illinois
11a	High-Voltage GaN-HEMTs for Power Electronics Applications and Current Collapse Phenomena under High Applied Voltage	Abstract
	Wataru Saito, Ichiro Omura and Kunio Tsuda, Toshiba Corp. Semiconductor Company and Toshiba Corp.
11b	An 800-W AlGaN/GaN HEMT for S-band High-Power Application	Abstract
	Eizo Mitani, Makoto Aojima, Arata Maekawa and Seigo Sano, Eudyna Devices, Inc.
11c	Fabrication of a robust high-performance floating guard ring edge termination for power Silicon Carbide Vertical Junction Field Effect Transistors	Abstract
	Victor Veliadis, Megan McCoy, Ty McNutt, Harold Hearne, Li-Shu Chen, Gregory DeSalvo, Chris Clarke, Bruce Geil, Dimos Katsis, Skip Scozzie, Northrop Grumman Advanced Technology Laboratory, U.S. Army Research Laboratory,
11d	Technological challenges for manufacturing power devices in SiC	Abstract
	Peter Friedrichs, SiCED Electronics Development GmbH & Co. KG, a Siemens Company
12a	III-V MOSFETs With Native Oxide Gate Dielectrics – Progress and Promise	Abstract
	P. Fay, X. Li, Y. Cao, J. Zhang, T. H. Kosel, and D. C. Hall
	University of Notre Dame
12b	Post-Si CMOS: III-V n-MOSFETs with High-k Gate Dielectrics	Abstract
	Yanning Sun,S. J. Koester, E. W. Kiewra, J. P. de Souza, N. Ruiz, J. J. Bucchignano, A. Callegari, K. E. Fogel, D. K. Sadana, J. Fompeyrine, D. J. Webb, J.- P. Locquet, M. Sousa, R. Germann, IBM Thomas J. Watson Research Center, IBM Zürich Research Laboratory
12c	HIGH MOBILITY III-V MOSFET TECHNOLOGY	Abstract
	M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, and P. Zurcher, Freescale Semiconductor, Inc.,
13a	InGaP-Plus™: Advanced GaAs BiFET Technology and Applications	Abstract
	William Peatman , Mohsen Shokrani, Boris Gedzberg, Wojciech Krystek, and Michael Trippe, ANADIGICS, Inc.,
13b	HighPerformance BiHEMT HBT / ED pHEMT Integration	Abstract
	T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit
	TriQuint Semiconductor
13c	Monolithic Integration of E/Dmode pHEMT and InGaP HBT Technology on 150mm GaAs Wafers	Abstract
	C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang,
	M. C. Tu and Y. C. Wang , WIN Semiconductors Corporation
13d	Commercial Viability of a Merged HBT-FET (BiFET) Technology for GaAs Power Amplifiers	Abstract
	Ravi Ramanathan, Mike Sun, Peter J. Zampardi, Andre G. Metzger, Vincent Ho, Cejun Wei, Peter Tran, Hongxiao Shao, Nick Cheng, Cristian Cismaru, Jiang Li, Shiaw Chang, Phil Thompson, Mark Kuhlman, Kenneth Weller , Skyworks Solutions, Inc.,
14a	Development and Ramping of pHEMT in an “HBT Fab”	Abstract
	Mike Fresina, C. Barratt, C. Duncan, S. Greene, W. Lewis, L. Li, T. Rogers, C. Santana, W. Wohlmuth, and R. Yanka , RFMD
14b	Computer Integrated Manufacturing in smaller GaAs Fabs	Abstract
	T. Sterk, C. Denton, N. Naul, TriQuint Semiconductor
14c	Resist Dispense Volume Reduction Using the Six Sigma Methodology	Abstract
	J. Riege, A. Canlas, D. Barone, D. Crawford, Y. Recsei, S. Mony, N. Ebrahimi, Skyworks Solutions
14d	Realizing Throughput Improvement through Machine Rate Modeling – Case Study	Abstract
	Marino F. Arturo, Sathish Mudabagila-Gowda, Ariel Meyuhas, MAX I.E.G. LLC
14e	Gate Shorts: A Process Engineer’s Nightmare	Abstract
	Thorsten Saeger, Travis A Abshere, Fabian Radulescu and Jack Lail, TriQuint Semiconductor
15a	Studying Package Delamination by TOF-SIMS and XPS	Abstract
	Luo JunHua, Yao JingZhong, Xu XueSong, Adhihetty Indira, Freescale Semiconductor (China)
15b	High-Volume Low Frequency Noise Characterization Technique	Abstract
	Cristian Cismaru, Mark Banbrook, and Peter J. Zampardi, Skyworks Solutions, Inc.
15c	Hydrogen Incorporation of Metal Gate HfO2 MOS Structures on In0.2Ga0.8AsSubstrate with Si Interface Passivation Layer	Abstract
	InJo Ok, H.Kim, M.Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikovl, W. Tsai 1,
	V. Tokranov2, M. Yakimov2, S. Oktyabrsky2, and Jack C. Lee, Intel Corporation, The University of Texas, Austin
15d	Uniformity Correlation of AlGaN/GaN HEMTs grown on 3inch SiC Substrates	Abstract
	C. Lee, J. Jimenez, U. Chowdhury, M. Kao, P. Saunier, T. Balistreri, A. Souzis, S. Guo, TriQuint Semiconductor
15e	Status of SEMI Standardization Efforts in Compound Semiconductors	Abstract
	James D. Oliver and Russ Kremer, Northrop Grumman Electronic Systems, Freiberger Compound Materials USA
15f	Plasma Surface Pretreatment Effects on Silicon Nitride Passivation of AlGaN/GaN HEMTs	Abstract
	David J. Meyer, Joseph R. Flemish, and Joan M. Redwing
	Department of Materials Science and Engineering,
	The Pennsylvania State University
15g	Yield Enhancement of 0.15um pHEMT Millimeter Wave Power Amplifiers using an Effective Statistical Analytical Approach	Abstract
	Nelson Chen, Scotie Lin, C.K. Lin, Wen Chu, Paul Yeh, H.C. Chou, Joe Liu and C.S. Wu, WIN Semiconductors Corporation
15h	Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment	Abstract
	Haiou LI, Chak-wah TANG, Kevin J. CHEN, and Kei May LAU, Hong Kong University of Science and Technology
15i	A Novel WaterWashable Coating for Avoiding Contamination During Dry Laser Dicing Operations	Abstract
	K.C. Su, H.H. Lu, S.H. Chen, C.D. Tsai,Y.C. Chou,W.J. Wu,G.Q. Wu,and J.C. Moore, Lee Chang Yung, Chemical Industrial Corporation (LCY), OPTO Tech Corporation, DAETEC, LLC
15j	High-Temperature Electrical Characteristics of SPDT GaAs Switches with Copper Metallized Interconnects	Abstract
	Y. C. Wu, E. Y. Chang, Senior Member, IEEE, Y. C. Lin and W. C. Wu, National Chiao-Tung University