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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2008 On-line Digest Table of Contents

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1.1	Market Trends for Compound Semiconductor Enabled Devices Bruce A. Bernhardt, Motorola Mobile Devices	Abstract
1.2	CMOS on Sapphire Switches for Cellular Handset Applications Dylan Kelly, Peregrine Semiconductor	Abstract
1.3	Compound Semiconductors From Oddity to Commodity Curt Barratt, RF Micro Devices	Abstract
1.4	III-V on Silicon for Future High Speed and Ultra-low Power Digital Applications: Challenges and Opportunities Robert Chau, Intel	Abstract
1.5	The DARPA Compound Semiconductors on Silicon (COSMOS) Program Mark Rosker, Defense Advanced Research Projects Agency	Abstract
1.6	Compound Semiconductors: Illinois Contributions and Perspective Ilesanmi Adesida, University of Illinois, Urbana-Champaign	Abstract
2.1	Novel GaAs Switch for Compact and Efficient Power Conversion Mariam Sadaka1, Sriram Chandrasekaran1, Al Rozman1, Wonill Ha2, Bobby Brar2, Chanh Nguyen2, Vivek Mehrotra2 and Peter Asbeck3, 1ColdWatt, 2Teledyne Scientific and 3University of California, San Diego	Abstract
2.2	Terahertz Electronics Michael Shur, Rensselaer Polytechnic Institute	Abstract
2.3	Heterointegration Technologies for “Systems in a Foil” Karlheinz Bock, Fraunhofer Institute for Reliability and Microintegration	Abstract
3.1	The Adoption of Lighting-Class LEDs into General Illumination Applications Paul Scheidt, Cree, Inc,	Abstract
3.2	Latest Advances in Multi-junction Photovoltaics Alexander Slade, Robert McConnell and Vahan Garboushian, Amonix Inc.	Abstract
4.1	Reduction of Process Variation Through Automated Substrate Temperature Uniformity Mapping in Multi-Wafer MBE Systems Thomas J. Rogers, Likang Li, Robert Yanka, Chris Santana, RFMD, Jason R. Williams, Charles A. Taylor II, Darryl Barlett, k-Space Associates, Inc.,	Abstract
4.2	Development and Characterization of Photodefinable Polybenzoxazole Buffer Layer for InGaP/GaAs HBT Applications Dragana Barone, Jiro Yota, Hoa Ly, Stanley Mui, Shiban Tiku, and Steve Canale Skyworks Solutions, Inc.	Abstract
4.3	Integration and Qualification of a Second Site HBT Epitaxial Wafer Foundry David Troy, Andreas Eisenbach, Paul Cooke, Tony Pearce, Graham Clarke, Iwan Davies, Susan Barne, IQE RF LLC, IQE Europe Ltd., Pascal Close	Abstract
4.4	Use of Chemical Mechanical Polishing for Planarization of GaAs Integrated Circuits Michael Meeder, Jeff Vass, Chuck Duncan, Walter Wohlmuth, Mike Fresina, and Curt Barratt, RF Micro Devices, Inc	Abstract
4.5	Lessons Learned from Laser Dicing Travis A Abshere, Moreen Minkoff, and Bill Howell, TriQuint Semiconductor,	Abstract
5.1	SiC and GaN Wide Bandgap Technology Commercial Status J.W. Milligan, S. Sheppard, W. Pribble, A. Ward, S. Wood, Cree, Inc.,	Abstract
5.2	Wafer Quality Target for Current-Collapse-Free GaN-HEMTs in High Voltage Applications Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi and Yasunobu Saito, Semiconductor Company, Toshiba Corp.	Abstract
5.3	A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V P. Waltereit1, W. Bronner1, R. Quay1, M. Dammann1, S. Müller1, R. Kiefer1, H. Walcher1, F. van Raay1, O. Kappeler1, M. Mikulla1, F. van Rijs2, T. Rödle2, S. Murad2, J. Klappe2, P. van der Wel2, P. Henriette2, B. Aleiner2, I. Blednov2, J. Thorpe3, R. Behtash3, H. Blanck3, K. Riepe3, 1Fraunhofer Institute for Applied Solid State Physics, 2NXP Semiconductors,3 United Monolithic Semiconductors,	Abstract
5.4	Over 80% Drain Efficiency CW AlGaN/GaN HEMT Power Amplifier H.P. Xin, B. Achiriloaie, V.H. Ngo and A. Mkhitarian, Tyco Electronics Inc.,	Abstract
5.5	Performance Improvement of High Power High Efficiency AlGaN/GaN HEMT based on the Process Design of Experiment Approach Yaron Knafo, Tamara Baksht, Oleg Aktushev, David Rozman and Gregory Bunin, Gal-El (MMIC),	Abstract
6.1	Via etching in BCB for HBT technology H.Stieglauer, T.Wiedenmann, H.Bretz, H.Mietz, D.Traulsen, D.Behammer , United Monolithic Semiconductors – GmbH,	Abstract
6.2	Photodefinable Polybenzoxazole Interlevel Dielectric for GaAs HBT Applications Jiro Yota, Hoa Ly, Dragana Barone, Mike Sun, and Ravi Ramanathan, Skyworks Solutions, Inc.	Abstract
6.3	Advanced multilayer interconnect technology for switch ICs using InP HEMTs Suehiro Sugitani, Kazumi Nishimura, Kiyomitsu Onodera, and Hideki Kamitsuna, NTT Photonics Laboratories, NTT Corporation	Abstract
6.4	Development of an on-wafer test for rapid evaluation of doping spike carrier concentration levels in commercially manufactured GaAs Gunn diodes for automotive radar applications N. Farrington1, M. Carr2, J. L. Sly1, M. Missous1 1Microelectronics & Nanostructures group, School of E&EE, University of Manchester, 2e2v Technologies (UK) Ltd,	Abstract
6.5	High Yield, Highly Scalable, High Voltage GaInP/GaAs HBT Technology P. Kurpas, B. Janke, A. Wentzel, H. Weiss, L. Schmidt, C. Rheinfelder*, R. Pazirandeh, A. Maaßdorf, L. Schellhase, W. Heinrich, J. Würfl Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH),	Abstract
6.6	Dry Etch Development for a Dual, Front and Backside, processing of II-VI Compound Semiconductors A.J. Stoltz, P. R. Norton, Night Vision and Electronic Sensors Directorate,	Abstract
7.1	Ultrathin all-binary AlN/GaN based high-performance RF HEMT Technology Huili (Grace) Xing, T. Zimmermann, D. Deen, K. Wang, C. Yu, T. Kosel, P. Fay, and D. Jena, Department of Electrical Engineering, University of Notre Dame	Abstract
7.2	Materials Characterization and Device Performance Survey of InAlN/GaN HEMT Layers from Commercial Sources M. Trejo, G. H. Jessen, A. Crespo, J.K. Gillespie, D. Langley, D. Denninghoff, and G. D. Via, Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base,	Abstract
7.3	Deep Submicron GaN-based Heterostructure Field Effect Transistors with InGaN Channel and InGaN Back-barrier Designs Yanqing Deng, Vinod Adivarahan, and Asif Khan, Department of Electrical Engineering, University of South Carolina	Abstract
7.4	Epitaxial Rare Earth Oxide Growth on GaN for Enhancement-mode MOSFETs J. S. Jur, V. D. Wheeler, M. T. Veety*, D. J. Lichtenwalner, D. W. Barlage*, M. A. L. Johnson, North Carolina State University	Abstract
7.5	Process and Performance Improvements to InGaN/GaN HBTs Chao-Hsin Wu, Benjamin F. Chu-Kung, and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois	Abstract
8.1	Yield Improvement Methodology in a pHEMT GaAs Fabrication Facility James Oerth, Christopher Doucette, Sushila Singh, Sean Doonan, Skyworks Solutions, Inc	Abstract
8.2	Discovery and Elimination of Defects Causing Yield Loss on E-FET Power Amps Tertius Rivers, Richard Helm, Jinhong Yang, Sumir Varma, Ed Etzkorn, Jeremy Middleton, Rob Christ, Bill Howell, TriQuint Semiconductor, 2	Abstract
8.3	Reducing chipping defects during GaAs wafer dicing with a four-point diamond tool Jason Chou, Chang-Hwang Hua, Sen Yang and Ping-Wei Chen, WIN Semiconductors corp.	Abstract
8.4	Defectivity Yield Improvement Activity to eliminate nitride blisters Mike Clausen, Jason McMonagle, Bela Green, Gayle Murdoch, Andrew Miller, John Cullen, Jim Moran, Filtronic Compound Semiconductors,	Abstract
9.1	Engineered Layer Transfer Substrates for Heterogeneous Integration of III-V Compound Semiconductors M.S. Goorsky, M.B. Joshi, S.L. Hayashi, and M. Jackson, UCLA,	Abstract
9.2	Advances in Large Diameter GaN on Diamond Substrates Jerry W. Zimmer and Gerry Chandler, sp3 Diamond Technologies,	Abstract
9.3	Materials Characterization Comparison of GaN HEMT-on-Diamond Layers Pre- and Post-Attachment John Carlin¹, Gregg Jessen¹, Jim Gillespie¹, David Tomich¹ Daniel Francis², John Wasserbauer², Firooz Faili², Dubravko Babic², Felix Ejeckam², Wright Patterson AFB,	Abstract
9.4	Wafer-fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and VBR ~ 35 V Chuanxin Lian and Huili Grace Xing, Department of Electrical Engineering, University of Notre Dame,	Abstract
10.1	Reliability and MMIC Technology Development and Production Thomas R. Block, Jeff Elliott, Yeong-Chang Chou, Mike Biedenbender, Denise Leung, David Eng, Aaron Oki, Mike Wojtowicz, and Rich Lai, Northrop Grumman Space Technology,	Abstract
10.2	Evaluating Device Reliability Using Wafer-level Methodology Dorothy June M. Hamada and William J. Roesch, TriQuint Semiconductor Inc.,	Abstract
10.3	Layout Design Rule Effects on Capacitor Reliability James D. Oliver, Harlan C. Cramer, and Richard J. Porter, Northrop Grumman Electronic Systems	Abstract
10.4	Measuring Liftoff Quality and Reliability with Special Test Structures William J. Roesch and Dorothy June M. Hamada, TriQuint Semiconductor, Inc.,	Abstract
11.1	Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using RF Waveform Engineering Chris Roff, 1 Johannes Benedikt1 and Paul J. Tasker1 D.J. Wallis, 2 K.P. Hilton, 2 J.O. Maclean, 2 D.G. Hayes, 2 M. J. Uren1,2 and T. Martin2, 1Cardiff School of Engineering, Cardiff University	Abstract
11.2	Gallium Nitride Surface Treatment Study for FET Passivation Process Flow Applications M.T. Veety, V.D. Wheeler, M.P. Morgensen, M.A.L. Johnson*, D.W. Barlage, North Carolina State University,	Abstract
11.3	Nanosecond Time-Resolved Raman Thermography: Probing Device and Channel Temperature in Pulsed-Operated GaN and GaAs HEMTs J.W. Pomeroy1, G. J. Riedel1, M. J. Uren2, T. Martin2, A. Bullen3, M. Haynes3, and M. Kuball1, 1H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom, 2QinetiQ Ltd, Malvern, Worcs WR14 3PS, United Kingdom, 3SELEX Sensors and Airborne Systems Ltd.	Abstract
11.4	Charge Trapping at Surface in GaN HEMTs Hsiang Chen, Phillip Preecha, John Lai, Guann-Pyng Li, Univ. of California, Irvine,	Abstract
11.5	Evaluation of Test Methods Employed for Characterizing Semi-Insulating Nature of Monocrystaline SiC Semiconductor Materials M.F. MacMillan1, W. Mitchel2, J. Blevins2, G. Landis2 , J. Daniel2 , R. S. Sandhu3, G. Chung1, M. Spaulding1 T. F. Zoes1, E. Emorhokpor4, C. Basceri5, J. Jenny5, E. Berkman5, Wolfgang Jantz6, W. Eichhorn7, A. Blew8, and J.D. Oliver9 Mark Fanton10, Tim Bogart10 and Bill Eversson10 1 Dow Corning Corporation, 2 Air Force Research Laboratory 3 Northrop Grumman Corporation 4 II-VI, Inc. 5 Cree, Inc. 6 SemiMap Scientific Instruments GmbH 7 Eichhorn and Hausman, GMBH 8 Lehighton Electronics 9 Northrop Grumman Corporation 10 Penn State Electro-Optics Center	Abstract
12.1	GaAs MESFET with Source-Connected Field Plate for High Voltage MMICs M. L. Balzan, M. J. Drinkwine, and T. A. Winslow*, Tyco Electronics, Inc.,	Abstract
12.2	Improving the Breakdown Voltage for 100nm GaAs pHEMTs by the Support of Device Simulations P. Abele, M. Schaefer1, M. Hosch 2, J. Splettstoesser, and D. Behammer , United Monolithic Semiconductors – GmbH,	Abstract
12.3	Design and Fabrication of a Compact GaAs IPD Balun Jon Abrokwah, Qiang Li, Lianjun Liu, Shahin Farahani‡, Dan Miller‡,Jyoti Mondal, Adolfo Reyes‡‡ and Jim Cotronakis‡‡ +, Freescale Semiconductor Inc	Abstract
12.4	Product Sensitivity Analysis on Multithrow TX/RX Switches Jerod Mason, David Petzold, Aparna Joshi, Edward Aspell, Skyworks Solutions, Inc.	Abstract
12.5	InP DHBT technology for 100 Gbit/s applications R. Driad, R.E. Makon, F. Benkhelifa, and R. Lösch,, Fraunhofer Institute for Applied Solid State Physics,	Abstract
13.1	Effect of Gate Edge Silicidation on Gate Leakage Current in AlGaN/GaN HEMTs Toshihiro Ohki, Masahito Kanamura, Naoya Okamoto, Kenji Imanishi, Kozo Makiyama, Kazukiyo Joshin, Toshihide Kikkawa and Naoki Hara, Fujitsu Ltd. and Fujitsu Laboratories Ltd.	Absract
13.2	Technology for Non-Recessed Short Gate Length E-Mode AlGaN/GaN High-Electron Mobility Transistors Anirban Basu, Minjun Yan, Vipan Kumar, Ilesanmi Adesida, Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering University of Illinois at Urbana-Champaign	Abstract
13.3	A Surface Treatment Technique for III-N Device Fabrication Yun Zhang, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen, School of Electrical and Computer Engineering	Abstract
13.4	Pre-passivation Plasma Surface Treatment Effects on Critical Device Electrical Parameters of AlGaN/GaN HEMTs David J. Meyer1*, Joseph R. Flemish1, and Joan M. Redwing1, 1 Department of Materials Science and Engineering, The Pennsylvania State University,	Abstract
13.5	A Novel AlGaN/GaN Field-Effect Diode with a Low Turn-on Voltage Operation using Fluoride-Based Plasma Treatment K. Takatani, T. Nozawa, T. Oka, H. Kawamura, and K. Sakuno, Advanced Technology Research Laboratories, Sharp Corporation,	Abstract
14.1	An InGaP/GaAs HBT/JFET BiFET technology for PA bias circuit applications Brian Moser, W. Wohlmuth, S. Nedeljkovic, W. Clausen, D. Halchin, R. Vass, and M. Fresina, RFMD	Abstract
14.2	Nano-scale Type-II InP/GaAsSb DHBTs to Reach THz Cutoff Frequencies William Snodgrass and Milton Feng, University of Illinois at Urbana-Champaign	Abstract
14.3	The Development of a Symbolically Defined Large Signal InP/GaAsSb Type-II DHBT Model for 200 GHz Mixed Signal Circuit Simulation Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino, William Snodgrass and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois, Urbana	Abstract
14.4	Thermal-Mechanical Characterization of Wafer Level Packaging Technologies R. Sandhu, P. Chang-Chien, Mathew Parlee, B. Poust, T. Chung, R. Tsai, A. Noori, V. Temsevary, O. Fordham, X. Zeng, K. Tornquist, D. Duan, T. P. Chin, and M. Barsky, Northrop Grumman Space Technology	Abstract
15.1	How to Succeed as a GaAs Foundry Glen Riley, VP Commercial Foundry Business Unit, TriQuint Semiconductor	Abstract
15.2	Eliminating the Paper Runsheet;One Fab’s Foray Into the Paperless World Richard Helm, Travis Abshere, Lisa Huynh, Paul Brodie, Karen Zakaria, TriQuint Semiconductor,	Abstract
15.3	Factory Automation beyond Recipe Selection N. Thakkar, D. Beasley, A. Lopez, R. Caguioa, G. Hafer, Skyworks Solutions,	Abstract
15.4	RF Module Assembly Overview Wally Holgado, TriQuint Semiconductor, Inc.	Abstract
16.1	The Wireless Industry: Entering a State of Confusion and Chaos Earl J. Lum, EJL Wireless Research LLC,	Abstract
16.2	Status of the SiC power devices market Dr. Philippe ROUSSEL, Yole Développement	Abstract
16.3	Are Silicon Technologies Poised to Displace GaAs? Asif Anwar, Christopher Taylor, Stephen Entwistle, Strategy Analytics,	Abstract
17.1	Maximizing Selectivity During Wet-Chemical Gold Etching K.C. Su,a H.H. Lu,a C.C. Chen,a and J.C. Mooreb, aLee Chang Yung Electronic Materials (LCYEM)	Abstract
17.2	Simple DOE-based inductor tool for design automation K. Kwok, Shing Lee*, Rui Lin, P. Zampardi, Skyworks Solutions, Inc.	Abstract
17.3	WITHDRAWN - Application of two-phase mechano-chemical polishing to ZnO substrate technology	Abstract
17.4	He+ Plasma Cleaning of Epiready InSb(112)B Surfaces for Compound Semiconductor Heteroepitaxy M. Jaime-Vasquez, A. J. Stoltz, R.N. Jacobs, L.A. Almeida, J.D. Benson, and M. Martinka, U.S. Army Research, Development and Engineering Command (RDECOM) Communications-Electronics Research, Development and Engineering Center CERDEC), Night Vision and Electronic Sensors Directorate (NVESD)	Abstract
17.5	Monolithic Integration of an Electroabsorption Modulator into a GaAs-based Duocavity VCSEL for Resonance-free Modulation J. van Eisden1, M. Yakimov1, V. Tokranov1, E. M. Mohammed2, I. A. Young2 and S. R. Oktyabrsky1, 1College of Nanoscale Science and Engineering, SUNY Albany,	Abstract
17.6	Process Development and Characteristics of Nano III-V MOSFET Donald Cheng, Chichih Liao, K.Y. Cheng, Milton Feng, Department of Electrical and Computer Engineering, University of Illinois	Abstract
17.7	Comparative study of thermal mismatch effects in CdTe/Si, CdTe/Ge, and CdTe/GaAs composite structures R.N. Jacobs,1,4 L.A. Almeida,1 J. Markunas,1 J. Pellegrino,1 M. Groenert,1 M. Jaime-Vasquez,1 N. Mahadik,2 C. Andrews,2 S.B. Qadri,2 T. Lee,3 and M. Kim.3, 1- U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060., 2- U. S. Naval Research Laboratory, Washington, DC 20375., 3- Department of Electrical Engineering, University of Texas	Abstract
17.8	BCB etching Process using High Density Plasma I.Toledo, R.Adler, Y. Knafo, O.Kalis , J.Kaplun, Gal-El (MMIC)	Abstract
17.9	Etching of GaAs in RIE & CAPEMode – Characterization of Surface Layer R. K. Bhardwaj, S. K. Angra, R. P. Bajpai, Nirmal Singh* & Lalit M Bharadwaj, Central Scientific Instruments Organization	Abstract
17.10	Galvanic Corrosion of Aluminum in Metal Stacks D. Eaves, J. Chen, I. Smorchkova, W. Sutton, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology	Abstract

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