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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2009 On-line Digest Table of Contents

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1.1	The Current Financial Crisis and It’s Impact on the Compound Semiconductor Industry	Abstract
	Earl J. Lum
1.2	The DARPA Wide Band Gap Semiconductors for RF Applications (WBGS-RF) Program: Phase II Results	Abstract
	Mark Rosker, Christopher Bozada, Harry Dietrich, Alfred Hung, Dave Via, Steve Binari,
	Ed Vivierios, Eliot Cohen and Justin Hodiak
1.3	Opportunities for Development of a Mature Concentrating Photovoltaic Power Industry	Abstract
	Sarah Kurtz
2.1	GaN Power Switching Devices for Automotive Applications	Abstract
	Tsutomu Uesugi and Tetsu Kachi
2.2	High Efficiency Base Station Amplifier Architectures Utilizing LDMOS and GaN High Power Transistors	Abstract
	Bill Vassilakis, Joseph Storniolo, Jeremy Monroe
2.3	Challenges as an Independent GaAs Foundry– A Manufacturing Perspective	Abstract
	Chin-chi Chang
3.1	Thin Film CdTe Module Manufacturing	Abstract
	Walter A. Wohlmuth
3.2	Concentrating Solar Energy- Technologies and Markets Overview	Abstract
	Raed Sherif
3.3	Triple-Junction Solar Cells (TJ-SC) – Support from MOCVD for Competitiveness through Improved Material Quality and Cost Reduction	Abstract
	B. Schineller, J. Hofeldt, R. Schreiner, G. Strauch, M. Heuken
3.4	Status of Multijunction Solar Cells and Future Development	Abstract
	Tatsuya Takamoto
4.1	High Frequency Wafer Level Reliability Test Bench with Variable Load Impedance	Abstract
	P. Abele, F. Bourgeois, M. Lanz, J. Grünenpütt, R. Behtash, J. Thorpe and D. Behammer
4.2	Lifetime Estimation of Intrinsic Silicon Nitride MIM Capacitors in a GaN MMIC Process	Abstract
	Sefa Demirtas, Jesus A. del Alamo, Donald A. Gajewski, Allen Hanson
4.3	PECVD Silicon Nitride Film Property and Pre-deposition Surface Treatment Effects on MIMCAP Reliability for InGaP/GaAs HBT Applications	Abstract
	Tony Wang
4.4	Investigating the ESD Robustness of RF Circuits and Elements by Transmission Line Pulsing	Abstract
	Heinrich Wolf, Horst Gieser, Karlheinz Bock
4.5	RF Test Gage R&R Improvement	Abstract
	James Oerth and Mike Downs
5.1	Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance	Abstract
	K. Matsushita, H. Sakurai, S. Teramoto, J. Shim, H. Kawasaki, K. Takagi, Y. Takada and K. Tsuda
5.2	Process Benchmarking of SiC Backside Via Manufacturing for GaN HEMT Technology	Abstract
	H.Stieglauer, G.Bödege, D.Öttlin, M.Ilgen, H.Blanck and D.Behammer
5.3	Very Low Sheet Resistance AlN/GaN High Electron Mobility Transistors	Abstract
	C.Y. Chang, T.J. Anderson, F. Ren, S.J. Pearton, A.M. Dabiran, A.M. Wowchak, B. Cui, and P.P. Chow
5.4	A Biosensor Based on GaN Field Effect Transistor	Abstract
	Siddharth Alur, Tony Gnanaprakasa, Hui Xu, Yaqi Wang, Aleksandr L. Simonian, Omar A. Oyarzaba, and Minseo Park
5.5	Wide Bandgap GaN Smart Power Chip Technology	Abstract
	King-Yuen Wong, Wanjun Chen, and Kevin J. Chen
6.1	Processing Methods for Low Ohmic Contact Resistance in AlN/GaN MOSHEMTs	Abstract
	K. Chabak, A. Crespo, D. Tomich, D. Langley, V. Miller, M. Trejo, J.K. Gillespie,
	G.D. Via , A.M. Dabiran, A.M. Wowchak, B. Cui, P.P. Chow
6.2	A Cu Metalized Power InGaP/GaAs Heterojuction Bipolar Transistor with Pd/Ge/Cu Alloyed Ohmic Contact	Abstract
	S. P. Wang, Y. C Lin, Y. L. Tseng, K. S. Chen, J. C. Huang and E. Y. Chang
6.3	Copper Interconnect on GaAs pHEMT by Evaporation Process	Abstract
	Kezia Cheng
6.4	TiWN Thin Film Resistor Process Control	Abstract
	J.W.Crites and M.J.Drinkwine
6.5	Process Development of GaAs Based RF MEMS Switch	Abstract
	P.Suryanarayana, A.A.Naik, Ch.Sridar, V.S.N. Murthy, J.Ravikiran, M.Renju, Sandeep, S.D. Prasad, Rao, A.Mangatayaru, S.K. Koul, and R.Muralidharan
7.1	SiC Backside Via-hole Process For GaN HEMT MMICs Using High Etch Rate ICP Etching	Abstract
	Naoya Okamoto, Toshihiro Ohki, Satoshi Masuda, Masahito Kanamura, Yusuke Inoue, Kozo Makiyama, Kenji Imanishi, Hisao Shigematsu, Toshihide Kikkawa, Kazukiyo Joshin, and Naoki Hara
7.2	High-Volume 0.25 mm AlGaAs/InGaAs E/D pHEMT Process Utilizing Optical Lithography	Abstract
	Corey Nevers, Andrew T. Ping, Tertius Rivers, Sumir Varma, Fred Pool, Moreen Minkoff, Ed Etzkorn, Otto Berger
7.3	SiC Substrate Via Etch Process Optimization	Abstract
	Ju-Ai Ruan, Sam Roadman, Cathy Lee, Cary Sellers, Mike Regan
7.4	Influence of Dielectric Plasma Etch Source for PHEMT Device Performance	Abstract
	F.S. Pool, Andrew T. Ping, and Michele Wilson
7.5	Fabrication Process and 110 GHz Measurement Result of MS-to-CPW RF-Via Transition for RF-MEMS Devices Packaging Applications	Abstract
	Li-Han Hsu, Wei-Cheng Wu, Edward Yi Chang, Herbert Zirath, Yun-Chi Wu, and Chin-Te Wang and Szu-Ping Tsai
8.1	Accurate Channel Temperature Measurement in GaN-based HEMT Devices and its Impact on Accelerated Lifetime Predictive Models	Abstract
	B. Claflin, E. R. Heller, B. Winningham, J. E. Hoelscher, M. Bellott, K. Chabak, A. Crespo, J. Gillespie, V. Miller, M. Trejo, G. H. Jessen, and G. D. Via
8.2	Field Dependent Self-Heating Effects in High-Power AlGaN/GaN HEMTs	Abstract
	M. Hosch, J. W. Pomeroy, A. Sarua, M. Kuball, H. Jung, and H. Schumacher
8.3	Determination of Junction Temperature of GaN-based Light Emitting Diodes by Electroluminescence and Micro-Raman Spectroscopy	Abstract
	Yaqi Wang, Hui Xu, Siddharth Alur, An-Jen Cheng, Minseo Park, Sharukh Sakhawat, Arindra N. Guha, Okechukwu Akpa, Saritha Akavaram and Kalyankumar Das
8.4	Temperature Diagnosis of Bulk GaN-based Schottky Diode by Raman Spectroscopy	Abstract
	Hui Xu, Siddharth Alur, Yaqi Wang, An-Jen Cheng, Kilho Kang, Claude Ahyi, John Williams, Minseo Park, Chaokang Gu, Andrew Hanser, Tanya Paskova, Edward A. Preble, Keith R. Evans, and Yi Zhou
8.5	Thermal and Piezoelectric Stress in Operating AlGaN/GaN HFET Devices and Effect of the Fe Doping in the GaN Buffer Layer	Abstract
	A. Sarua1, T. Batten, H. Ji, M. J. Uren, T. Martin, and M. Kuball
9.1	Bulk Growth of GaN by HVPE	Abstract
	H.Ashraf, R.Kudrawiec, J. Misiewicz, P.R.Hageman
9.2	Orientation Control of Bulk GaN Substrates Grown via Hydride Vapor Phase Epitaxy	Abstract
	P.R. Daniels, E.A Preble, T. Paskova, and D. Hanser
9.3	Withdrawn	Abstract
9.4	PVD of AlN Nucleation Layers for GaN-based LED Structures: A Cheaper and Brighter Alternative	Abstract
	D. Hanser, E.A. Preble, T. Clites, T. Stephenson, R. Jacobs, T. Johnson, T. Paskova, and K.R. Evans
10.1	Maintaining a Green Fab through the Strategic Use of an Environmental Management System	Abstract
	Ernest Diaz and Troy Schulze
10.2	Characterization of Arsenic Rich Waste Slurries Generated During Gallium Arsenide Wafer Lapping and Polishing.	Abstract
	Keith W. Torrance, Helen E. Keenan,. Jan Sefcik, Andrew Hursthouse, David Livingstone
10.3	Improving Organizational Performance through Goal Deployment	Abstract
	Andy Hunt and James Oerth
10.4	Web-Based Business Intelligence for Semiconductor Manufacturing	Abstract
	Leo Sennott, Jorge Willemsen
10.5	Cycle Time and Cost Reduction Benefits of an Automated Bonder and Debonder System for a High Volume 150 mm GaAs HBT Back-end Process Flow	Abstract
	Dave Kharas, Nagul Sooriar
11.1	In Situ Monitoring of HBT Epi Wafer Production: The Continuing Push Towards Perfect Quality and Yields	Abstract
	E. M. Rehder, K. Tsai, P. Rice, C. R. Lutz, and K. S. Stevens
11.2	HBT Epitaxial Material Matching and Qualification for High Volume Production	Abstract
	Mike Sun, Peter Zampardi, Cristian Cismaru, and Lance Rushing
11.3	Dramatic Reduction of Surface Defects and Particles on pHEMT epi-wafers grown by MOVPE for higher yield of Transistors	Abstract
	Hiroyuki Kamogawa, Hisataka Nagai, Kazuto Takano and Yohei Otoki
11.4	pHEMT Switch Yield Improvement Through Feedback From 100% Die Test	Abstract
	M. C. Tu, Paul Yeh, S. M. Liu, H. Y. Ueng and W. D. Chang
12.1	Advanced GaAs MMIC Fabrication Process with PIN Diodes for ESD Protection	Abstract
	Kaoru Miyakoshi, Takehiko Kameyama, and Koichi Nagata
12.2	Monolithically Integrated GaInP/GaAs High-Voltage HBTs and Fast Power Schottky Diodes for Switch-Mode Amplifiers	Abstract
	P. Kurpas, A. Wentzel, B. Janke, C. Meliani, W. Heinrich, J. Würfl
12.3	Device Technology Based on New III-N Heterostructures	Abstract
	Masaaki Kuzuhara
12.4	0.15 Micron Gate 6-inch pHEMT Technology by Using I-Line Stepper	Abstract
	Cheng-Guan Yuan, S.M. Joseph Liu, Der-Wei Tu, Rex Wu, Jeff Huang, Frank Chen and Yu-Chi Wang
12.5	Recessed JPHEMT Technology for Low Distortion and Low Insertion Loss Switch	Abstract
	Shinichi Tamari, Koji Wakizono, Yuji Ibusuki and Mitsuhiro Nakamura
13.1	Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement	Abstract
	Tom Hand, Jennifer Welborn, and Jim Oerth
13.2	Self Aligned Field-Plate PHEMT for 5.8 GHz Operation	Absract
	K. Moore, M. C De Baca, J-H. Huang, O. Hartin, H. Stewart, S. Shaw, C. Gaw, T. Arnold, M. Miller, C.E. Weitzel, and J. Cotronakis
13.3	Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing	Abstract
	Kezia Cheng
13.4	Optimization of Bi-layer Lift-Off Resist Process	Abstract
	Jeremy Golden, Harris Miller, Dan Nawrocki, Jack Ross
14.1	Manufacture of Sb-Based Type II Strained Layer Superlattice Focal Plane Arrays	Abstract
	Meimei Z. Tidrow, Lucy Zheng, Hank Barcikowski, James Wells, Leslie Aitcheson
14.2	Low Threshold Current Density InAs Quantum Dash Lasers on InP Using DoublE Cap Technique	Abstract
	D. Zhou, B.O. Fimland, R. Piron, O. Dehaese, F. Grillot and S. Loualiche
14.3	Monolithically Integrated III-V and Si CMOS Devices on Silicon on Lattice Engineered Substrates (SOLES)	Abstract
	J.R. LaRoche, W.E. Hoke, T.E. Kazior, D. Lubyshev, J. M. Fastenau, W. K. Liu, M. Urteaga, W. Ha, J. Bergman, M. J. Choe, B. Brar, M. T. Bulsara, E. A. Fitzgerald, D. Smith, D. Clark, R. Thompson, C. Drazek, N. Daval, L. Benaissa and E. Augendre
14.4	Technology for Dense Heterogeneous Integration of InP HBTs and CMOS	Abstract
	Y. Royter, P.R. Patterson, J.C. Li, K.R. Elliott, T. Hussain, M.F. Boag-O’Brien, J.R. Duvall, M.C. Montes, D.A. Hitko, M. Sokolich, D.H. Chow and P.D. Brewer
15.1	Semiconductor Industry - RCRA Air Emission Equipment Leak Standards	Abstract
	Sara Burson and Danny Kringel
15.2	Paradigm Shift in Compound Semiconductor Production since the Introduction of Laser Dicing	Abstract
	Rene Hendriks, Jeroen van Borkulo and Mark Mueller
15.3	Use of Failure Modes and Effects Analysis (FMEA) Methodology in Evaluation of Process Transfer of Ohmic Liftoff from Low-Pressure-Solvent to High-Pressure-NMP Liftoff	Abstract
	J.W.Crites and S.W.Kittinger
15.4	150 nm InP HBT Process with Two-Level Airbridge Interconnects and MIM Capacitors for Sub-Millimeter Wave Research	Abstract
	William Snodgrass, Mark Stuenkel, and Milton Feng
15.5	The Effects of Chemical Treatment and Storage Time on the Surface Chemistry of Semi-Insulating Gallium Arsenide	Abstract
	Thomas Mirandi and Douglas J. Carlson