P A P E R    T I T L E
0.1 µm InGaAs/InAlAs/InP HEMT Production Process for High Performance and High Volume MMW Applications

A U T H O R  /  C R E D I T S
R. Lai, M. Barsky, R. Grundbacher, L. Tran, T. Block,
T.P. Chin, V. Medvedev, E. Sabin, H. Rogers,
P. H. Liu, Y.C. Chen, R. Tsai and D. Streit
TRW Inc., Electronic Systems and Technology Division
One Space Park, Redondo Beach, CA 90278
Tel: 310-813-0346
email: Richard.Lai@trw.com

We have developed a unique production process based on 75 mm diameter InP substrates and 0.1 µm passivated InP HEMT devices. Our InP HEMT MMIC technology has demonstrated state-of-art low noise performance from 2-200 GHz. We present here over 2000 manufactured 44 GHz LNAs with greater than 80% yield and typical performance of 25 dB gain and 2.2 dB noise figure. We have also compiled statistical process data from approximately 100 recently fabricated 0.1 µm 75 mm InP HEMT MMIC wafers which demonstrates the consistent performance and repeatability of our process over a 6-8 month period.