P A P E R    T I T L E
Characterizing Fabrication Process Induced Effects in Deep Submicron PHEMT's Using Spectrally Resolved Light Emission Imaging

A U T H O R  /  C R E D I T S
Zhuyi Wang, Weidong Cai, Mengwei Zhang and G.P. Li
Department of Electrical and Computer Engineering
University of California, Irvine, 92697
E-mail: zhuyi@ece.uci.edu, Tel: (949) 824-4019, Fax: (949) 824-3732
Tony Hwang, Shyh-liang Fu, Patrick Chye, Kevin Schuerman and Sushila Venkatesan
Hewlett Packard Co., Santa Clara, CA 95054-3292

Spectrally resolved light emission imaging technique was used for the first time in characterizing fabrication process variation induced effects on deep submicron power PHEMT's electrical characteristics. It is observed in devices processed with different conditions that the difference in gate leakage current can be attributed to gate misalignment as revealed both by emission imaging technique and scanning electron microscope. Defects in the active channel region were also located using the emission imaging technique. The defects have a characteristic of generation-recombination centers with a discrete energy level rendering the Lorentzian shape in drain current flicker noise spectrum.