P A P E R    T I T L E
Testing Radiation damage in III-V Transistors

A U T H O R  /  C R E D I T S
R.Anholt!, J. Gillespie$, R. Dettmer$, J.Sewell$, C.Bozada$, R. Bhattacharya#, H. Evans#

! Gateway Modeling, Inc, Minneapolis, MN 55414, tel:612-339-4239, anholt19@idt.net
$ Air Force Research Laboratory, Wright Patterson AFB, Ohio, 45433
# Universal Energy Systems, Dayton Ohio 45432

HBTs, MESFETs, and pHEMTs were measured on-wafer before and after irradiation by 3MeV protons at a dose of 1013 cm-2 . The HBT current gains decreased because the collector currents decreased and the base currents increased. This was modeled using G-PISCES-2B assuming that the radiation reduced the recombination lifetimes in the base by about a factor of 0.05. The model is partially verified by periphery-to-area dependencies. The FET and HEMT pinchoff voltages Vp increased by 6 to 19% of the depletion voltage (Vbi-Vp, where Vbi~0.78V) and are modeled assuming 0.6 to 1.2x10 16 cm -3 deep-donor and acceptor impurities are created by the irradiation. This work shows the value of proton implantors in assessing radiation damage to space-based electronics.