P A P E R    T I T L E
Transfer and Qualification of a Layout-Compatible Second Source HBT Technology for Mobile Phone Applications
A U T H O R  /  C R E D I T S
Art Geissberger, Mike Fresina, Larry Kapitan, Curt Barratt, Kin Tan, Matt Hoppe, Dwight Streit, Tom Block, Mike Lammert and Aaron Oki
RF Micro Devices, Inc., 7914 Piedmont Triad Parkway
Greensboro, NC 27409 336-605-9237

TRW Space and Electronics Group, One Space Park
Redondo Beach, CA 90278

RF Micro Devices (RFMD) and TRW have completed the transfer and qualification of TRW's GaAs HBT process to RFMD, establishing for the first time a layout-compatible second source for HBT-based RFICs. HBTs have significant performance and cost advantages for high efficiency and high linearity power amplifiers, low cost gain block ICs, as well as frequency converters and LNA mixers for wireless applications. HBT technology has found application in several high volume commercial products, and, until now, there has not been a qualified second source for this advance technology. These applications are produced in very high volumes, in the million parts per week level, and require a second source production facility to insure meeting production requirements. To meet these needs RFMD and TRW transferred TRW's HBT technology to RFMD's new fabrication line in Greensboro, North Carolina. The transfer included the HBT process and the critical, high-reliability molecular-beam epitaxial (MBE) growth process. We believe this is the first successful transfer of HBT technology from one production facility to another.