P A P E R    T I T L E
Improved Manufacturability Methods for a High Volume, PHEMT Based, Ku-Band Power Module for VSAT Applications.

A U T H O R  /  C R E D I T S
W alter R. Buchwald, Debra J. Tonks, David M. Barber and Aryeh Platzker
Raytheon Advanced Device Center
358 Lowell Street, Andover MA 01810

In order to manufacture a MMIC based module the manufacturer must have the ability to clearly identify final performance goals, establish a methodology to obtain these goals, and then fully integrate all aspects of the modules fabrication to produce a cost effective solution. This paper presents one approach used to develop a high volume, Ku-band module for VSAT applications. This 0.5 to 1 W module is designed around a four stage, 50 Ohm in/out PHEMT MMIC amplifier fabricated on Raytheonís 0.25 µm T-gate process. By taking into account module and MMIC statistical distributions, providing wide spec margins at both MMIC and module production testing, and using a "design for worst case" approach, final MMIC yields of greater than 75% and final module yields greater than 85% are obtained. The use of an on chip resistive biasing network, coupled with simple DC sorting, allows a simplified off-shore assembly procedure which does not require individual module bias adjustments known to be typical for PHEMT based products. Further cost reductions are obtained through the use of a two step assembly procedure utilizing eutectic die attach and an epoxy attached substrate as well as high speed HP84000 testing at Ku-band.