Electrochemical Etching Impact On GaAs Process, Mask Design and Device Performance

I. Hallakoun, T. Boterashvile, G. Bunin and Y. Shapira
ELTA Electronics Industried Ltd., P.O. B. 330, Ashdod 77102, Israel
Department of Physical Electrinics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel

An enhanced consumption of the GaAs material is observed in the vicinity of metal structures exposed during wet processes.  It has a pronounced impact on the electrical performance of the fabricated device, and may be observed visually.  The damage occurs whenever a wet processing either cleaning\oxide removal or etching is performed.  The effect on electrical parameters and visual appearance and its magnitude depends on process conditions and the chemistry involved.  This paper presents electrical measurements and observations of the possible damage to the device and suggests different approaches to reduce the effect.




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