InP HBT Technology and Applications
A.K. Oki, D.C. Streit, K.W. Kobayashi, A.Guitierrez-Aitkin, L.T. Tran, T. Block, P. Chin, P.C. Grossman, F. Yamada, D. Sawdai, M.D. Lammert, M. Wojtowicz, E. Kaneshiro, K. Sato, G. Leslie, L. Yang, H.C. Yen
TRW Inc, One Space Park, Redondo Beach, CA 90278
The performance and cost advantages of our gallium arsenide (GaAs) based Heterojunction Bipolar Transistor (HBT) technology has enabled several high volume commercial applications. TRW is currently delivering over 4 million MBE based HBT integrated circuits per month for low cost commercial wireless applications, as well as for high performance high reliability defense avionics, ground, and space applications. Indium Phosphide (InP) based HBT technology has several enabling advantages over GaAs HBTs for commercial communication applications, in particular for high efficiency cellular and millimeter wave power amplifiers, 40 GBPS fiber-optic communications, and signal processing ICs.