Material quality and uniformity issues of MOVPE-grown GaInP/GaAs HBTs

P. Kurpas, F. Brunner, M. Achouche, T. Spitzbart, E. Richter, T. Bergrunde, D. Rentner, M. Mai, J. Wurfl and M. Weyers
Ferdinand-Braun-Institut fur Hochstfrequenztechnik (FBH)
Albert-Einstein-Str. 11, 12489 Berlin, Germany

This extended abstract provides correlations between expitaxial growth parameters of MBTs and device performance.  Optimizing the single p-GaAs layer quality leads to the highest DC current gain obtained but at the expense of non-ideal uniformity of the base sheet resistance.  Near perfectly uniform base sheet layer on 4 inch wafers is achieved by changing the parameters for the intrinsic carbon doping but the HBT current gain decreases.  The consequences of this compromise for HBT performance and reliability are discussed.  State-of-the-art HBT single devices (3x30 mm2) as well as multifinger power cells were fabricated.



Return to TOC