GaAs Metamorphic HEMT (MHEMT): The Ideal Candidate for High Performance, Millimeter Wave Low Noise and Power Applications

C.S. Whelan, P.F. Marsh, W.E. Hoke, T.E. Kazior

Raytheon RF Components, 362 Lowell Street, Andover MA  01810

GaAs metamorphic HEMTs promise to be the next generation of transistor technology to fill the emerging demand for high performance millimeter-wave devices.  This paper will review the material properties, the processing, and the device and amplifier performance of metamorphic HEMTs with 30% to 60% indium channel content, with a focus on work done at Raytheon RF Components




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