0.1 mm InGaAs/AlGaAs/GaAs HEMT MMIC Production Process for High Performance Commercial Ka-band LNAs

R. Lai, P.J. Liu, J. Scarpulla, R. Tsai, D. Leung, D. Eng, R. Grundbacher, M. Aust, J. Lee, M. Hoppe

TRW Inc. RF Product Center
One Space Park, Redondo Beach, CA  90278

We present a 0.1 mm InGaAs/AlGaAs/GaAs HEMY (GaAs HEMT) MMIC process for high volume, low cost Ka-band low noise amplifier applications.  This process has achieved both state of art MMIC low noise performance  including 1.3 dB noise figure at 30 GHz and 2.0 dB noise figure at 38 GHz (both with greater than 20 dB associated gain), r.f. yield in excess of 80% and superb reliability with a high activation energy of 1.7 eV and a mean time to failure of 6 billion hours (~60,000 years) at a channel temperature of 125C.




Return to TOC