MOVPE-Grown Enhancement Mode HIGFET on 150mm GaAs

Eric S. Johnson, Adolfo Reyes, Nyles Cody and Mark Rittgers
Motorola Inc., Semiconductor Product Sector

Enhancement mode HIGFETs have been grown by low pressure MOVPE on 150 mm diameter GaAs substrates using a single wafer MOVPE reactor. The MOVPE-grown HIGFET devices have rf performance exceeding the best HIGFET devices from commercially-available, MBE-grown epi.