Performance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications


Shyh-Chiang Shen 1 , David C. Caruth 1 , and Milton Feng 1,2

1 Xindium Technologies, Inc., Suite 304, 100 Trade Centre Drive, Champaign, IL 61820

Tel: 217-355-7080 ext. 30; e-mail:

2 Microelectronics Laboratory, Department of Electrical and Computer Engineering,

University of Illinois at Urbana-Champaign, Urbana, IL 61801




A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver front-end applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of greater than 250 GHz are achieved on InP/InGaAs SHBTs with a collector thickness of 3000.


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