Ultra Broadband MEMS Switch on Silicon and GaAs Substrates
Richard Chan, Robert Lesnick, David Caruth, and Milton Feng
High Speed Integrated Circuits Group
Electrical and Computer Engineering,
208 N. Wright,
Keywords: RF MEMS, Switch, Stiction, Reliability
This paper reports on the performance of highly reliable dc to 110GHz low-voltage millimeter wave MEMS switches on GaAs and Si. The switch has demonstrated insertion loss less than 6dB and isolation better than 15dB up to 110GHz and a cold switching lifetime greater than 6.9 ×10 9 cycles. The design and fabrication methods used to achieve ultra broadband performance and high reliability are presented.