Ultra Broadband MEMS Switch on Silicon and GaAs Substrates

Richard Chan, Robert Lesnick, David Caruth, and Milton Feng

High Speed Integrated Circuits Group

Department of Electrical and Computer Engineering, University of Illinois

208 N. Wright, Urbana, IL 61801, USA

e-mail: rchan@hsic.micro.uiuc.edu



Keywords: RF MEMS, Switch, Stiction, Reliability



This paper reports on the performance of highly reliable dc to 110GHz low-voltage millimeter wave MEMS switches on GaAs and Si. The switch has demonstrated insertion loss less than 6dB and isolation better than 15dB up to 110GHz and a cold switching lifetime greater than 6.9 10 9 cycles. The design and fabrication methods used to achieve ultra broadband performance and high reliability are presented.



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