Development and Characterization of a 600 PecVD Si3N4 High-Density MIM Capacitor for InGaP/GaAs HBT Applications

Jiro Yota, Ravi Ramanathan, Jose Arreaga, Peter Dai, Cristian Cismaru,

Richard Burton, Parminder Bal, Lance Rushing

Skyworks Solutions, Inc.

GaAs Technology

2427 W. Hillcrest Dr., Newbury Park, CA 91320



Keywords: PecVD Silicon Nitride, MIM Capacitor, InGaP/GaAs, HBT



We have developed and characterized an ultra-thin 600 silicon nitride high-density MIM capacitor for InGaP/GaAs HBT applications. This thin silicon nitride film was deposited using PecVD method at 300C, and has a capacitance density of 0.93 fF/m 2 with a high breakdown field of >10 MV/cm. The film has low wet-etch rate and passes standard high humidity and high temperature pressure cooker tests. This Si3N4 MIM capacitor was demonstrated to have excellent TDDB lifetime, as well as good ESD characteristics. Physical and optical characterization, including X-SEM, AFM, and FTIR, show that the film has good conformality, low surface roughness, and does not degrade and absorb water. Furthermore, the film is manufacturable with good process control characteristics, including film thickness, refractive index, uniformity, stress, and with low particle density.



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