Integrated circuits using embedded III-V-on-Ge MHEMTs in multi-layer thin-film technology

R. Vandersmissen 1 , D. Schreurs 1 , S. Vandenberghe 1 , G. Carchon, and G. Borghs 2

IMec, MCP, Kapeldreef 75, B-3001 Leuven, BELGIUM 1 also with E.E. Dept. of K.U.Leuven, BELGIUM; 2 also with Physics Dept. of K.U.Leuven, BELGIUM

Phone: +32-16-288056, e-mail:


Keywords: MCM-D, Thin-Film Transistor, Semi-Monolithic Integration, MHEMT



In this paper a demonstrator oscillator circuit integrated in a MCM-D on glass technology is presented. The active device of the oscillator is a thin-film Ge (germanium) -based MHEMT. The MHEMT is embedded in the bottom dielectric layer of the MCM-D. The combination of passive MCM-D technology and MHEMTs on Ge allows for efficient semi-monolithic integration of active devices and realisation of (optoelectronic) MCMs with embedded passive and active components.



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