Power GaInP/GaAs HBTs for High Voltage Operation

P. Kurpas, A. Maaßdorf, W. Doser*, W. Köhler, P. Heymann, B. Janke, F. Schnieder,

H. Blanck*, P. Auxemery**, D. Pons**, W. Heinrich, J. Würfl

Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH)

Albert-Einstein-Str .11, 12489 Berlin, Germany

Phone: +49-30-6392-2674, fax: +49-30-6392-2685, e-mail: kurpas@fbh-berlin .de

* United Monolithic Semiconductors GmbH, Wilhelm-Runge-Str. 11, 89081 Ulm, Germany

Phone: +49-731-505-3097, Fax: +49-731-505-3005, e-mail: doser@ums-ulm .de

** United Monolithic Semiconductors S.A.S., Route Departementale 128, 91401 Orsay, France

Phone: +33-1-69330212, Fax: +33-1-69330203, e-mail: dominique.pons@ums-gaas .com


Keywords: GaInP, power HBT, high voltage, heatsinking, flip-chip mounting



We report on GaInP/GaAs HBTs tuned for operation at high bias voltage as commonly used for base station amplifiers . These devices deliver up to 10 W at 26 V and 2 GHz. Their ruggedness is demonstrated by operation up to 36 V, where still 6 W output power is obtained despite of very high dissipated power of ~ 9 W. The power performance of these HBTs is limited by heatsinking conditions. Conventional backside soldering on a heatsink is compared with flip-chip soldering on AlN submount as developed at FBH. The superiority of flip-chip mounting is predicted by thermal simulations and confirmed by increased output power, higher efficiency and higher gain. Especially, PAE up to 83 % and 15 dB gain were measured on flip chip mounted HBTs delivering 5.5 W of output power.



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