Improved characterization of diffusion in ohmic contacts using Backside SIMS
Patrick Van Lierde, Chunsheng Tian
Charles Evans &
Email: firstname.lastname@example.org; Phone: 1-408-530-3812
Keywords: Backside SIMS, ohmic diffusion, laser diode
Secondary Ion Mass Spectrometry (SIMS) is a proven analytical tool for materials characterization. Backside SIMS was used successfully to study the diffusion of a Au/Pt/Ti metal stack on a laser diode as well as to identify unintentional p-type doping. We will illustrate the excellent control of polishing depth with minimal surface roughness and excellent planar control.