Predictive Modeling of InGaP/GaAs HBT Noise Parameters from DC and S-Parameter Data for Wireless Power Amplifier Design

James Chingwei Li 1 , Peter J. Zampardi 2 , and Van Pho 3

1 UCSD, ecE Dept., 9500 Gilman Dr., MS 0407, La Jolla, CA 92093; (858) 414-0159; 2 Skyworks Solutions Inc., 2427 W. Hillcrest Dr., MS 889-A02, Newbury Park, CA 91320; (805) 480-4728; 3 Skyworks Solutions Inc., 20 Sylvan Rd., Woburn, MA 01801; (781) 376-3167;


Keywords: HBT, Noise Parameters, Modeling, Parameter Extraction, Amplifier



Noise characterization of bipolar transistors is typically a lengthy and costly process. As a result, routine monitoring of microwave noise does not generally occur for HBT technologies or products. In contrast, vast quantities of parametric DC data and S-parameter data are measured during the regular course of technology development and production. In work by Voinigescu et al [1], DC and S-parameter data are used to predict Silicon BJT and Silicon-Germanium HBT noise parameters. The goal of this work is to apply and adapt, if necessary, the method of [1] to InGaP/GaAs HBTs.



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